49results about How to "Large process tolerance" patented technology

The invention relates to semiconductor technology, aims to overcome the difficulty of manufacturing a semiconductor power device with a trench / gate super-junction, and provides a method for manufacturing a longitudinal power semiconductor device. The technical scheme of the invention is as follows: firstly a first semiconductor region is formed by epitaxial process; a first oxide layer and a deposited mask layer are formed at the top of the first semiconductor region, the photoetching operation is performed, a first trench is formed by etching, a second oxide layer is formed on the two side walls of the first trench, the second oxide layer is removed by wet-etching, a third oxide layer is formed on the inner wall of the trench, a second semiconductor region is formed on the two side walls of the first trench, the third oxide layer is removed, a fourth oxide layer is formed, insulation dielectrics are packed and then planarization is carried out, a body region is formed, a second trench is formed on the body region by etching, a trench gate is made, and finally a source region and a body contact region are formed, followed by electrode preparation and surface passivation. The method has the benefits of having low process difficulty and being applied to MOS-controlled longitudinal devices.

This application discloses an optical film, comprising: a polymer having a first surface and a second surface, the first surface and the second surface opposing to each other; a microlens structure being formed on the first surface, an accommodation structure being formed on the second surface, the accommodation structure accommodating a number of pattern structures imaging through the microlens structure; the microlens structure and the accommodation structure being integral; and the micro-focusing units and the pattern structures being adapted to each other, so that the optical film forms at least one image floating in the optical film when the optical film is viewed from a side of the pattern structures or a side of the micro-focusing units. A substrate layer is omitted from the optical film, hence, the optical film is reduced in thickness, and mechanical performance is not good, which makes the optical film easy to be cut in thermoprinting.

The invention relates to a terahertz quantum cascade laser of a multiple-mode interface structure. The terahertz quantum cascade laser comprises a multiple-mode interference wave guiding structure. The multiple-mode interference wave guiding structure comprises a semi-insulating substrate, a buffer layer, a lower contact layer, an active region, an upper contact layer and an upper metal layer in the perpendicular direction from bottom to top in sequence, wherein the active region, the upper contact layer and the upper metal layer form a ridge type structure on the lower contact layer; lower metal layers are arranged on the two sides of the ridge type structure; the upper metal layer forms a multiple-mode wave guide and output wave guides through the wet etching method; the output wave guides are single-mode wave guides and located at the centers of the two ends of the multiple-mode wave guide, and the width of each output wave guide is smaller than that of the multiple-mode wave guide. The invention further relates to a manufacturing method of the THz QCL. By the adoption of the THz QCL of the multiple-mode interface structure and the manufacturing method of the THz QCL, the light-emitting power of the THz QCL can be increased, the quality of an emitted light beam is not reduced, collection efficiency is not reduced, the device is kept small, and cost is reduced.

The present invention discloses a monolithic silicon-based transmitter, and relates to the silicon photonic and photoelectron integration field. The emitter comprises a laser integrated to a silicon-based platform; a tip mode spot matcher formed on the end face of a silicon waveguide; a silicon waveguide biconical beam splitter used as the input end of an MZI modulator and connected with the tip mode spot matcher; two thermodes respectively formed on the two arms of the MZI modulator and / or two high-frequency electrodes respectively formed on the two arms of the MZI modulator; an MMI beam splitter formed behind the output end of the MZI modulator, wherein two output ports are split by the MMI beam splitter; and a backlight detector formed on the silicon-based platform and connected with one output port of the MMI beam splitter. The monolithic silicon-based transmitter not only realizes the monolithic integration of the laser and the modulator on the silicon-based platform, is low in manufacturing cost, simple in technology and high in integration degree, and facilitates the large-scale production.

An electro-optical intensity modulator and its application to realize the improvement of the switch extinction ratio, the electro-optic intensity modulator includes an input optical waveguide; a first coupler; a first pair of phase modulation arms, and the sides of the two arms are provided with a first pair of rows Wave electrode; multi-mode interference structure, which includes two input optical waveguides, a multi-mode interference region and two output optical waveguides, used to convert the two beams of light modulated by the first pair of phase modulation arms through the multi-mode interference region The new two beams of light that are output; the second pair of phase modulation arms, the sides of the two arms are provided with a second pair of traveling wave electrodes; the second coupler and the output optical waveguide, which are used to combine the second coupler after the light output. The structure of the present invention can compensate the decrease of the extinction ratio caused by the asymmetry caused by the process error by tuning the optical power ratio of the two branches at the input end of the modulator, significantly improve the extinction ratio, increase the process tolerance, and improve the production efficiency and good quality Rate.

The present invention relates to a method based on microelectronic technology, a method for reducing the ohmic contact resistance of GaN HEMT devices based on regrowth technology, and the specific implementation steps include (1) growing a high-resistance buffer layer / superlattice structure; (2) growing SiO 2 ; (3) define ohmic contact area; (4) prepare Ni etch stop layer; (5) etch SiO, superlattice layer; (6) remove Ni etch stop layer; (7) grow AlGaN / GaN heterogeneous Junction; (8) Removal of SiO 2 ; (9) Define the ohmic contact area; (10) Form ohmic contact by evaporation / stripping / low temperature annealing. The present invention aims at the shortcomings of the existing GaN HEMT ohmic contact metal, such as poor morphology and high contact resistivity, and proposes to introduce a superlattice structure in the ohmic contact region to solve the above problems, with (1) low contact resistivity; (2) ohmic contact metal surface The advantage of high topography quality.

The invention discloses an organic acid roughening solution, the ingredient of which comprises organic acid; the organic acid roughening solution is characterized in that the ingredient of the organic acid roughening solution comprises 0.1-3.0% of impurity ion masking agent by percentage composition. Compared with the prior art, the organic acid roughening solution has the beneficial effects that: by adopting the impurity ion masking agent, the organic acid roughening solution can effectively solve the problem that the roughening solution is easy to be interfered by impurity ions such as tin,iron, and the like; the organic acid roughening solution reduces the time by which the roughening solution is replaced during the surface treatment technique of the copper used for a printing circuitboard and prolongs the service life of the roughening solution. The organic acid roughening solution has the advantages of strong capability of impurity ion pollution resistance, large process tolerance and convenient use; furthermore, under the condition of identical small copper corroding amount, the roughening degree of the surface of the copper is high; therefore, the organic acid roughening solution can obviously reinforce the adhesion of the surface with other coating or polymer and ensure the quality of coating and electro-plating or chemical-plating treatment.

The invention discloses a waveguide Bragg grating based on a SiO2 strip-loaded waveguide and a manufacturing method thereof. The waveguide Bragg grating comprises a substrate layer, a flat core layer, a guide core layer and an upper coating, wherein the flat core layer covers the front side of the substrate layer, the guide core layer is positioned on the front side of the flat core layer, and the upper coating covers the front side of the flat core layer and wraps the guide core layer. The waveguide Bragg grating has the advantages of simplicity in process, low cost, good consistency, large-scale production and the like; and compared with a manufacturing process of an outer ridge modulation type waveguide Bragg grating based on a ridge waveguide, the manufacturing method has the advantages that the process is simple, the cost is low, the size is small and the like.

The invention discloses an electro-optic phase shifter doping structure, a preparation method and an electro-optic modulator, belonging to the field of semiconductor optoelectronic devices. The electro-optic phase shifter doping structure includes a ridge-shaped optical waveguide, and the ridge-shaped optical waveguide includes a ridge region and a The rib regions on both sides of the region, the ridge region includes an N-type doped ridge region and a P-type doped ridge region, and two vertically inclined PN junctions and connections are formed at the interface between the N-type doped ridge region and the P-type doped ridge region. The laterally inclined PN junction of the two vertically inclined PN junctions; wherein, the interface between the N-type doped ridge region and the P-type doped ridge region does not intersect the left and right sides of the ridge region. The doping structure in the present invention increases the overlapping area of ​​the optical field and the PN junction in the phase shifter, improves the phase shifting efficiency, has a lower driving voltage, reduces the power consumption of the phase shifter, and has an impact on the modulation bandwidth of the phase shifter Very small, compatible with CMOS process and has a large process tolerance, thus ensuring the yield rate of the device.

A micro-ring optical switch based on three-dimensional integration of silicon-silicon nitride. A three-dimensional waveguide cross junction is formed by a laterally arranged silicon waveguide and a longitudinally arranged top layer silicon nitride waveguide, and is cascaded with a middle layer of silicon nitride waveguides. Microrings are formed by vertical coupling. The interlayer coupler is used to realize the interlayer coupling between the silicon nitride waveguide in the middle layer and the other two layers of waveguides, so as to assist the conversion of optical signals between the three layers of waveguides. The invention utilizes the doping of the bottom silicon waveguide to form a micro-heater, and generates heat by applying electricity at both ends of the doped waveguide to adjust the resonance wavelength of the silicon nitride microring of the intermediate layer, and switches the path of the optical signal, and has the advantages of low power consumption . When the wavelength of the optical signal matches the resonant wavelength of the microring, two optical signals in opposite directions can be routed in the device simultaneously. The optical switch structure of the present invention has a large processing tolerance, does not require additional power consumption to compensate for the shift of the operating wavelength, is insensitive to temperature, and does not require a complex control circuit.