The invention discloses a
waveguide coupling type separate absorption and multiplication
avalanche diode, which relates to the field of
semiconductor photoelectric devices and the field of optical
interconnection. The
waveguide coupling type separate absorption and multiplication
avalanche diode comprises a p plus type
ohmic contact electrode, a p plus type
ohmic contact layer, an
absorption layer, a p type charge region, a multiplication region, an n plus type
ohmic contact electrode, an n plus type ohmic
contact region, an insulated burial layer, a substrate and a single-mode
waveguide; the
waveguide coupling type separate absorption and multiplication
avalanche diode is characterized that the p type charge region is positioned at the
tail end of the single-mode waveguide, the
absorption layer is positioned at the top part of the p type charge region, the multiplication region and the n plus type ohmic
contact region are coplanar with the single-mode waveguide and are tightly close to the p type charge region to be sequentially arranged, stretching directions of the p type charge region, the multiplication region and the n plus type ohmic
contact region are vertical to a
light transmission direction of the single-mode waveguide, and the p type charge region, the multiplication region and the n plus type ohmic contact region are in the same thickness with the single-mode waveguide. According to the
waveguide coupling type separate absorption and multiplication avalanche
diode disclosed by the invention, the
optical coupling efficiency is increased by a device by utilizing the
coupling of the single-mode waveguide while the separate absorption and multiplication is realized, a disturbance phenomenon of electric signals of double multiplication regions is avoided, the size of the device can be reduced to
nanometer size, the
transition time and the
dark current can be reduced, and the sensitivity is increased.