A method for reducing the ohmic contact resistance of gan HEMT devices based on re-growth technology and GaN HEMT devices

Abstract

The present invention relates to a method based on microelectronic technology, a method for reducing the ohmic contact resistance of GaN HEMT devices based on regrowth technology, and the specific implementation steps include (1) growing a high-resistance buffer layer / superlattice structure; (2) growing SiO 2 ; (3) define ohmic contact area; (4) prepare Ni etch stop layer; (5) etch SiO, superlattice layer; (6) remove Ni etch stop layer; (7) grow AlGaN / GaN heterogeneous Junction; (8) Removal of SiO 2 ; (9) Define the ohmic contact area; (10) Form ohmic contact by evaporation / stripping / low temperature annealing. The present invention aims at the shortcomings of the existing GaN HEMT ohmic contact metal, such as poor morphology and high contact resistivity, and proposes to introduce a superlattice structure in the ohmic contact region to solve the above problems, with (1) low contact resistivity; (2) ohmic contact metal surface The advantage of high topography quality.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device preparation, in particular to a method for reducing the ohmic contact annealing temperature on a GaN HEMT (gallium nitride high electron mobility transistor) by using etching and diffusion technology. Background technique [0002] The application of GaN as a third-generation semiconductor material in power devices has received extensive attention. Among them, HEMTs based on AlGaN / GaN heterojunction structures have the advantages of high frequency, high power density and high operating temperature. They are solid-state microwave power devices and The development direction of power electronic devices. Excellent ohmic contact is the basis for realizing high-performance GaN devices, including low ohmic contact resistivity and good ohmic contact morphology. Ti / Al / Ni / Au is one of the most widely used GaN HEMT ohmic contact metal structures, and forms ohmic contact with GaN through alloy. ...

AI Technical Summary

Problems solved by technology

[0004] The present invention aims at the problem of poor surface morphology of ohmic contact metal caused by high temperature annealing in the ohmic manufacturing process of GaN HEMT devices, and provides a method for reducing the ohmic contact annealing temperature of GaN HEMT devices based on etching and diffusion technology. The method can Effectively reduce the annealing temperature of GaN HEMT ohmic contact, improve the surface morphology of ohmic contact metal, and can be widely used in the development and production of various GaN HEMT devices

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