63results about How to "Increase light absorption area" patented technology

A touch module with photovoltaic conversion function includes a touch zone and a non-touch zone. The touch zone includes a first clear substrate, a second clear substrate and a photovoltaic conversion unit. The first clear substrate has opposite first and second sides, and the second clear substrate has opposite third and fourth sides. A first and a second touch electrode layer are provided on the second side and the third side, respectively; and the photovoltaic conversion unit is provided on the first side of the first clear substrate. By providing the photovoltaic conversion unit in the touch zone of the touch module, the photovoltaic conversion unit can have increased light-absorption areas to enable conversion of light into more electric current and accordingly, enable a touch device using the touch module to have extended standby and operation time.

The invention discloses a condensing lens which comprises a light outlet face, a lateral curved face and a light inlet face. The light inlet face is arranged at the bottom of the condensing lens and is concavely arranged in the condensing lens to form an inner cavity for accommodating a light source. A step protruding to one side of the light source is arranged at the top of the inner cavity, the lateral wall of the inner cavity serves as a first light inlet face, and all points on the step are arranged above a straight line formed by the connection between one end of the top of the inner cavity and the relative end of the light source. Light reflected by a first light emitting face can be projected to the surface of the step and can be scattered or absorbed by the surface of the step. The step can prevent the reflected light from entering the condensing lens from the other side of the inner cavity, so that no miscellaneous aureole and no miscellaneous halo are generated around light spots projected by the condensing lens, and the evenness and the visual attractiveness of the light spots are greatly improved. Meanwhile, light generated by the condensing lens can be gathered at the central light strength position, the central light strength and the brightness of the light spots are improved, and the light outlet efficiency is high. The condensing lens is simple in structure, strong in workability and easy to produce.

The invention discloses a photocatalyst immobilization method on a flexible fiber substrate, which belongs to photocatalysis technology. Add a solvent to the photocatalyst and silica binder to configure a catalyst suspension; coat the catalyst suspension on a flexible fiber substrate and dry to obtain a loaded photocatalyst precursor; the loaded photocatalyst precursor Soak in alkaline solution and dry to get the target product loaded photocatalyst, the loading capacity of photocatalyst is 0.2~1.6mg / cm 2 . Compared with other loading methods, this method does not require high-temperature treatment, uses silica binder and flexible fiber substrate, and can stably load the photocatalyst on the carrier only by drying, with good bonding effect, easy operation, and equipment Low requirements, low cost, large-scale preparation of supported photocatalysts; high photocatalytic activity, better reusability in alkaline reaction liquids; flexible carrier materials selected, easy for other treatments, stable performance, applicable to all areas wide.

The invention discloses a wide-band high-performance photodetector based on a palladium selenide thin film / silicon cone wrapped structure heterojunction and a preparation method thereof. The silicon cone is firstly etched on an n-type lightly doped silicon wafer with a silicon oxide layer. structure, and then wrap PdSe outside the silicon cone structure 2 film, so that the two form a heterojunction. The photoelectric detector of the invention has simple device preparation process, stable and good performance, and opens up new prospects for the application of transition group metal selenide materials in photoelectric detectors.

The invention discloses an III-V family semiconductor solar energy cell structure and manufacturing method thereof, comprising a protection housing and the following layers arranged inside the protection housing in succession from the bottom to the top: a transparent substrate, an amorphous silicon layer, an III-V family polycrystalline semiconductor layer, a transparent light transmission layer and a light absorption layer. The bottom end of the protection layer is flexibly provided with a protection bottom plate. The light absorption layer is designed into a recessed arc shape and agrees with the concave groove on the transparent light transmission layer; the surface and the inner part of the transparent light transmission layer are provided with a plurality of micro-holes so that incoming light rays could be guided into the III-V family polycrystalline semiconductor layer horizontally. In the invention, an arc shaped light absorption layer, a transparent light transmission layer and a transparent substrate are used in the structure, which not only extends the service life of the structure and reduces the overall cost, but also increases the light absorption size, effectively absorbs light energy and raises the conversion efficiency of the solar energy cell to the light.