Heterojunction solar cell based on n-type silicon wafer and manufacturing method thereof

Abstract

The invention discloses a heterojunction solar cell based on an n-type silicon wafer, comprising an n-type silicon wafer, a front-side i-layer silicon film, a front-side p-layer silicon film, a reverse-side i-layer silicon film, a reverse-side n-layer silicon film, a front-side film conductive layer and a reverse-side film conductive layer, wherein at least one of the front-side film conductive layer and the reverse-side film conductive layer is a zinc oxide film conductive layer; the front-side i-layer silicon film, the front-side p-layer silicon film, and the front-side film conductive layerare successively deposited on the front side of the n-type silicon wafer; and the reverse-side i-layer silicon film, the reverse-side n-layer silicon film and the reverse-side film conductive layer are successively deposited on the reverse side of the n-type silicon wafer. The manufacturing method of the heterojunction solar cell of the invention is a completely dry process, clean and hygienic, can achieve fully automated production to reduce manpower, is low in the vacuum coating process cost, and greatly improves the market application value of the heterojunction solar cell.

Description

technical field [0001] The invention relates to the field of solar cells, and more specifically, to a heterojunction solar cell based on n-type silicon wafers and a manufacturing method thereof. Background technique [0002] Heterojunction solar cell, referred to as HIT, is a silicon wafer solar cell with high conversion efficiency. The problem faced by this kind of solar cell is that the process is too complicated and the equipment is too expensive. Therefore, its commercial application value is greatly limited. [0003] In the traditional manufacturing process, the silicon wafer is first chemically treated to passivate the surface and produce uneven suede, and then transferred to the plasma-enhanced chemical vapor deposition equipment to deposit the p-i and i-n layers of amorphous silicon to form a thin film. It is then transferred to the magnetron sputtering equipment to coat ITO, and then the grid lines are printed and the edges are cleaned with lasers. The process and e...

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Problems solved by technology

[0002] Heterojunction solar cell, referred to as HIT, is a silicon wafer solar cell with high conversion efficiency. The problems faced by this kind of solar cell are that the process is too complicated and the equipment is too expensive. Therefore, its commercial application value is greatly limited.

[0003] In the traditional manufacturing process, the silicon wafer is first chemically treated to passivate the surface and produce uneven suede, and then transferred to the plasma-enhanced chemical vapor deposition equipment to deposit the p-i and i-n layers of amorphous silicon to form a thin film. Then transfer to the magnetron sputtering equipment to coat ITO, and then print the grid line and use laser edge cleaning. The process and equipment are quite complicated.

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