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Array substrate, manufacturing method of array substrate, flat panel detector and imaging device

A technology of array substrate and manufacturing method, which is applied in the direction of electric solid-state devices, semiconductor devices, radiation control devices, etc., and can solve the problems of reducing the detection effect of flat-panel detectors and the decline of TFT conduction performance, etc.

Active Publication Date: 2017-08-29
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, when the above-mentioned photoelectric converter 101 is manufactured, it will affect the TFT on the array substrate, so that the conduction performance of the TFT is reduced, thereby reducing the detection effect of the flat panel detector.

Method used

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  • Array substrate, manufacturing method of array substrate, flat panel detector and imaging device
  • Array substrate, manufacturing method of array substrate, flat panel detector and imaging device
  • Array substrate, manufacturing method of array substrate, flat panel detector and imaging device

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Embodiment Construction

[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0034] The present application provides an array substrate 10, including image 3 The shown base substrate 01 is arranged on the base substrate 01 as figure 2 Shown are a plurality of Low Temperature Poly-Silicon (LTPS) TFTs arranged in a matrix, and a photoelectric converter 101 connected to the source 120 (or drain 121 ) or drain 121 of the TFTs.

[0035] Wherein, the array substrate 10 further includes a plurality of gate lines Gate and readout signal lin...

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PUM

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Abstract

The invention provides an array substrate, a manufacturing method of the array substrate, a flat panel detector and an imaging device, and relates to the field of photoelectric technology. The influence of manufacturing process of a photoelectric converter on the TFT performance can be reduced. The array substrate comprises a substrate, a plurality of low-temperature polycrystalline silicon TFT arranged on the substrate in an array, and a photoelectric converter connected with source electrodes or drain electrodes of the TFT, wherein the source electrode or the drain electrode of each TFT comprises a first conducting layer close to one side of the photoelectric converter, and the material constituting the first conducting layer is corrosion resistant in a composition process of the photoelectric converter. The array substrate is used for preparing the flat panel detector.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to an array substrate and a manufacturing method thereof, a flat panel detector and an imaging device. Background technique [0002] X-ray detection is widely used in the medical field, and flat panel technology is usually used to detect the X-rays passing through the target to be measured. The flat panel detection technology includes direct detection and indirect detection. Among them, the Flat Panel Detector (FPD) used to realize indirect detection, such as figure 1 As shown, it includes an array substrate 10 and an X-ray conversion layer 11 covering the array substrate. Thin Film Transistors (Thin Film Transistor, TFT) and photoelectric converters 101 arranged in an array are arranged on the array substrate. The X-ray conversion layer 11 converts X-rays into visible light, and then the photoelectric converter 101 converts the visible light into electrical signals and s...

Claims

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Application Information

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IPC IPC(8): H01L27/12H01L27/144H01L27/146H01L21/77
CPCH01L27/124H01L27/1288H01L27/1443H01L27/14658H01L27/14683H01L27/14632H01L27/14687H01L27/14663H01L27/14616H01L27/14692
Inventor 蒋会刚高建剑郭海波朱孝会
Owner BOE TECH GRP CO LTD
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