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Array substrate and manufacturing method thereof, flat panel detector and imaging device

A flat-panel detector and array substrate technology, which is applied in the fields of flat-panel detectors, imaging equipment, array substrates and manufacturing methods thereof, can solve the problems of lowering the detection effect of the flat-panel detector and the decrease of TFT conduction performance.

Active Publication Date: 2020-08-21
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, when the above-mentioned photoelectric converter 101 is manufactured, it will affect the TFT on the array substrate, so that the conduction performance of the TFT is reduced, thereby reducing the detection effect of the flat panel detector.

Method used

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  • Array substrate and manufacturing method thereof, flat panel detector and imaging device
  • Array substrate and manufacturing method thereof, flat panel detector and imaging device
  • Array substrate and manufacturing method thereof, flat panel detector and imaging device

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Embodiment Construction

[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0034] The present application provides an array substrate 10, including image 3 The shown base substrate 01 is arranged on the base substrate 01 as figure 2 Shown are a plurality of Low Temperature Poly-Silicon (LTPS) TFTs arranged in a matrix, and a photoelectric converter 101 connected to the source 120 (or drain 121 ) or drain 121 of the TFTs.

[0035] Wherein, the array substrate 10 further includes a plurality of gate lines Gate and readout signal lin...

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Abstract

The application provides an array substrate and a manufacturing method thereof, a flat panel detector and an imaging device, which relate to the field of optoelectronic technology and can reduce the influence of a photoelectric converter manufacturing process on TFT performance. The array substrate includes a base substrate, a plurality of low-temperature polysilicon TFTs arranged in a matrix on the base substrate, and a photoelectric converter connected to the source or drain of the TFTs. Wherein, the source electrode and the drain electrode of the TFT include a first conductive layer close to the side of the photoelectric converter, and the material constituting the first conductive layer is resistant to etching during the patterning process of the photoelectric converter. The array substrate is used to prepare a flat panel detector.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to an array substrate and a manufacturing method thereof, a flat panel detector and an imaging device. Background technique [0002] X-ray detection is widely used in the medical field, and flat panel technology is usually used to detect the X-rays passing through the target to be measured. The flat panel detection technology includes direct detection and indirect detection. Among them, the Flat Panel Detector (FPD) used to realize indirect detection, such as figure 1 As shown, it includes an array substrate 10 and an X-ray conversion layer 11 covering the array substrate. Thin Film Transistors (Thin Film Transistor, TFT) and photoelectric converters 101 arranged in an array are arranged on the array substrate. The X-ray conversion layer 11 converts X-rays into visible light, and then the photoelectric converter 101 converts the visible light into electrical signals and s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L27/144H01L27/146H01L21/77
CPCH01L27/124H01L27/1288H01L27/1443H01L27/14658H01L27/14683H01L27/14632H01L27/14687H01L27/14663H01L27/14616H01L27/14692
Inventor 蒋会刚高建剑郭海波朱孝会
Owner BOE TECH GRP CO LTD
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