43results about How to "High controllability of process parameters" patented technology

The invention discloses a method for refining grains of large medium high alloy steel forgings in the technical field of metal heat treatment. The method comprises the following steps of: austenitizing the forged forgings, cooling to tip temperature of a perlitic transformation area, and isothermally keeping temperature or fluctuantly keeping temperature to realizing isothermal decomposition of pearlite; and cooling to room temperature, and performing the secondary austenitizing process to realize recrystallization to refine the grains again. The method solves the problem that the traditionalmultiple normalizing process in actual production has instable effect of refining the grains of the large forgings, and a serious phenomena of coarse grains and mixed grains. By incomplete isothermalbalanced decomposition of austenite, structure inheritance is cut off and eliminated, average austenite grain size above ASTM No.5 grade is achieved, the structure state of the large forgings is improved, the ultrasonic inspectability of the large forgings is improved; meanwhile, working hours are greatly shortened, the energy consumption is reduced, and the cost is saved.

The invention discloses a sol method for preparing electronic-grade ferric phosphate. The method comprises the steps of: preparing a mixed solution from a solution of one or more of phosphoric acid, monohydric phosphate or dihydric phosphate and a ferric salt at a molar ratio of P to Fe being (1:1)-(6:1), and stirring and heating at the temperature of 20-100 DEG C for 0.5-10 hours to form a buffer solution; then adding ferric phosphate sol to the buffer solution, thus changing the pH value and micro chemical environment of the system and promoting the separation of precipitate; and washing the precipitate, filtering and drying to prepare ultramicro fine powder ferric phosphate with D50 being 1-3 mu m. The method disclosed by the invention has the advantages that: the process is simple, the controllability of the process parameters is strong, the use raw materials are fewer, and the method is suitable for scaled industrial production; and ferric phosphate prepared by the method has low impurity content and uniform particle size distribution, and is suitable for being used for further preparing electronic-grade ferric phosphate lithium.

The preparation method of a kind of indapamide capsule of the present invention comprises preparation granulation liquid, adopts fluidized bed top spray one-step granulation, then sieves dry granule and mixes with lubricant evenly, finally granule is filled in hard capsule shell Indapamide capsules were prepared. The method reduces the process steps and shortens the preparation time, and the whole production process is prepared by airtight equipment, which is not easy to cause pollution to the environment and operators, and can greatly improve production efficiency; the inlet air temperature is below 70°C, and the production safety hazard is small, which is suitable for industrialization It has the advantages of low energy consumption and high safety production coefficient; it solves the problems of poor mixing uniformity and uneven release in the wet granulation process, good granule formability, high controllability of process parameters in the production process, reducing the influence of manual operations, and improving The quality stability of the drug can solve the problem of unqualified content uniformity of the product or low dissolution rate of the product.

The embodiment of the present invention discloses a method for preparing a zirconium alloy hot-rolled plate, including: forging a zirconium alloy ingot with a preset size and a preset weight after heat preservation, heat treatment, first surface treatment, forging after heat preservation, The second surface treatment, multi-pass hot rolling and vacuum annealing. The zirconium alloy hot-rolled medium-thick plate produced in the embodiment of the present invention has excellent corrosion resistance and mechanical properties, and has a uniform and fine structure, which meets the technical standard requirements for the zirconium alloy medium-thick plate used in nuclear reactors. The invention has simple process, short preparation process and low production cost, and is expected to change the long-term dependence on imports of domestic high-performance zirconium alloy medium-thick plates.

The invention relates to a direct reduction process for producing sponge iron by using CH4 non-catalytic oxygen-enriched transformation. A process route comprises the following steps: preheating a CH4-enriched raw gas and oxygen-enriched air which are subjected to purification and pressure regulation, then introducing the CH4-enriched raw gas and the oxygen-enriched air into a non-catalytic oxygen-enriched transformation furnace for a combustion reaction in the non-catalytic oxygen-enriched transformation furnace, and raising the temperature to transform CH4 therein into CO and H2 to form a high-temperature transformation gas; in the meantime, cooling, dedusting and pressurizing a top gas of a shaft furnace, then introducing the top gas into a hydrogen purification device to prepare purified hydrogen, preheating the purified hydrogen, and then introducing the preheated purified hydrogen into the lower part of the catalyst oxygen-enriched transformation furnace to be mixed with the high-temperature transformation gas generated through the combustion reaction to form a reduced coal gas; and introducing the reduced coal gas into the shaft furnace to reduce iron ores into the sponge iron. The direction reduction process disclosed by the invention not only has the advantages of short process flow, availability for energy saving and emission reduction, long service life of a nozzle and low investment cost, and can be used to prevent the sponge iron from caking and avoid carbon formation.

The invention provides a manufacturing method for a large tantalum plate, which comprises the following steps: 1, performing multi-pass cogging and rolling to a tantalum plate mold; 2, grinding and repairing the surface; 3, destressing and annealing; 4, performing multi-pass finished product rolling; and 5, performing annealing treatment to a finished product, and finally obtaining the large tantalum plate with the thickness of 0.5-2 mm, the width of 1000 mm-1300 mm, and the length of 1400 mm-2100 mm. The manufacturing method has the advantages of simple technological process, strong processing parameter controllability and easiness in industrialized mass production. The invention adopts the processing technique of first cogging rolling and then finished product rolling, controls and optimizes the rolling technique and the annealing schedule, finally obtains the large tantalum plate with good surface quality, high planeness and excellent mechanical property, solves the technical bottleneck that the present technique can not manufacture large tantalum plates continuously and stably, and really promotes the development of tantalum plates.

The present invention discloses a transparent conductive WC thin film, the matrix of the WC thin film is amorphous, and the high-density WC microcrystals of a crystalline state are distributed in theamorphous matrix disorderly. The sizes of the WC microcrystals are about 5 nm, and the WC microcrystals are the hexagonal phase structures, the visible light transmissivity of the WC thin film reachesup to 85%, and the resistivity is low to 4.7*10-3 ohm cm. The atomic percent of the W:C in the WC thin film is 53.1:46.9, and the microhardness of the transparent conductive WC thin film is 21 GPa. The present invention also discloses a preparation method of the WC thin film. The preparation method adopts a radio frequency magnetron sputtering method, and takes a WC alloy as the target material and the Ar-CH4 as the working gas. After a reaction chamber is vacuumized to the base pressure higher than 1*10-4 Pa, an Ar-CH4 mixed gas is let in, and the WC thin film grows at a room temperature andin the plasma atmosphere of Ar and CH4, a mercury lamp is adopted to irradiate a substrate during a deposition process, and the wavelengths of the mercury lamp are 185 nm and 254 nm. By the dual effects of the plasma enhancement and the ultraviolet enhancement, the crystal quality of the room temperature growing WC thin film is improved.