40results about "Dielectric characteristics" patented technology

An epoxy resin composition for an electronic material is provided which contains: a multifunctional biphenyl-type epoxy resin which is a triglycidyloxybiphenyl or a tetraglycidyloxybiphenyl; and a curing agent and / or a curing promoting agent. Further, an epoxy resin composition for an electronic material is provided which also contains a filler, specifically a thermally conductive filler. Further, a cured product formed by curing said epoxy resin composition, and an electronic member containing said cured product are provided.

An electrical assembly which has a multi-layer conformal coating on at least one surface of the electrical assembly, wherein each layer of the multi-layer coating is obtainable by plasma deposition of a precursor mixture comprising (a) one or more organosilicon compounds, (b) optionally O2, N2O, NO2, H2, NH3, N2, SiF4 and / or hexafluoropropylene (HFP), and (c) optionally He, Ar and / or Kr. The chemistry of the resulting plasma-deposited material chemistry can be described by the general formula: SiOxHyCzFaNb. The properties of the conformal coating are tailored by tuning the values of x, y, z, a and b.

The present invention concerns a backplane electronic board (20) having on inner face (142) suitable for being connected to electronic board connectors (12) and an outer face (143) suitable for being connected to an outer connector (15), the backplane board (20) being characterized in that it has blind holes opening on the inner face (142) of same, and holes opening on the outer face (143) of same, the holes being suitable for receiving press-fit connection elements and forming therewith an electrical connection point.

A boron nitride / resin composite circuit board having high heat dissipation characteristics and high reliability is provided. A boron nitride / resin composite circuit board, including: a plate-shaped resin-impregnated boron nitride sintered body having a plate thickness of 0.2 to 1.5 mm, the plate-shaped resin-impregnated boron nitride sintered body including 30 to 85 volume % of a boron nitride sintered body having boron nitride particles bonded three-dimensionally, the boron nitride particles having an average long diameter of 5 to 50 μm, and 70 to 15 volume % of a resin; and a metal circuit adhered onto both principal planes of the plate-shaped resin-impregnated boron nitride sintered body, the metal circuit being copper or aluminum, wherein: a ratio of a linear thermal expansion coefficient in a plane direction of the resin-impregnated boron nitride sintered body at 40 to 150° C. (CTE1) and a linear thermal expansion coefficient of the metal circuit at 40 to 150° C. (CTE2) (CTE1 / CTE2) is 0.5 to 2.0.

A photosensitive glass paste contains a photosensitive organic component and an inorganic component containing a glass powder having a high softening point, a glass powder having a low softening point, and a ceramic filler. The ceramic filler has a thermal expansion coefficient of 10×10−6 / ° C. to 16×10−6 / ° C., the inorganic component contains 30% to 50% by volume of the ceramic filler, and the inorganic component contains 0.5% to 10% by volume of the glass powder having a low softening point.

Disclosed is a flexible ultrasonic transducer in which a single layer serves dual function as both a matching layer and a flexible circuit for making electrical connections, and there is no separate matching layer. Also disclosed is a method of assembling the flexible transducer.

To provide an adhesive film comprising a polyimide film and a fluorinated resin layer directly laminated, in which blisters (foaming) in an atmosphere corresponding to reflow soldering at high temperature are suppressed, and a flexible metal laminate.An adhesive film having a fluorinated resin layer containing a fluorinated copolymer (A) directly laminated on one side or both sides of a polyimide film, wherein the fluorinated copolymer (A) has a melting point of at least 280° C. and at most 320° C., is melt-moldable, and has at least one type of functional groups selected from the group consisting of a carbonyl group-containing group, a hydroxy group, an epoxy group and an isocyanate group, and the fluorinated resin layer has a thickness of from 1 to 20 μm.

A display device includes a substrate on which a plurality of pixels are arranged and a circuit for displaying images with respect to each pixel is formed, a substrate terminal as a terminal formed on the substrate, and an electronic component terminal as a terminal of an electronic component electrically connected to the terminal via an anisotropic conductive film. A conductive region that conducts to the anisotropic conductive film in the substrate terminal has a light transmissive part in which a material having light transmissivity penetrates the substrate surface in a perpendicular direction.

This present disclosure generally relates to systems and methods of electrophoretic deposition (EPD) techniques for use in insulation systems at least partially encapsulating a semiconductor device, a conductive component and a substrate, such as insulation systems of semiconductor devices, busbars, or the like. Insulation systems formed using EPD processes may be designed to have a dielectric constant that decreases in a direction away from a substrate of the insulation system. This may improve insulation technologies since depositing coatings with sequentially arranged dielectric constants may improve resistance of the insulation system to high temperature, high electric fields, or the like.

The invention relates to a power semiconductor module. According to one example of the invention, the power semiconductor module has a circuit board with a structured first metal structure and at least one second metal structure arranged on the upper side of the circuit board. At least one housingless semiconductor chip is arranged on the top side of the circuit board, the semiconductor chip has a plurality of contact electrodes, which in turn are connected to corresponding contact pads of the first metal structure on the top side of the circuit board via bonding wires connect. During operation, the contact electrodes and the corresponding first part of the contact lugs are connected to a high voltage. All high-voltage-connected contact lugs are electrically conductively connected to the second metal structure via inner-layer connections. The insulating layer completely covers the chip and the separation area of ​​the circuit board surrounding the chip, wherein all contact pads and inner layer connections for high-voltage switching are completely covered by the insulating layer. The plurality of contact electrodes and the corresponding second portion of the contact pads are at a low voltage during operation.