130 results about "Vertical growth" patented technology

Non-polar or semi-polar (Al, Ga, In)N substrates are fabricated by re-growth of (Al, Ga, In)N crystal on (Al, Ga, In)N seed crystals, wherein the size of the seed crystal expands or is increased in the lateral and vertical directions, resulting in larger sizes of non-polar and semi-polar substrates useful for optoelectronic and microelectronic devices. One or more non-polar or semi-polar substrates may be sliced from the re-grown crystal. The lateral growth rate may be greater than the vertical growth rate. The seed crystal may be a non-polar seed crystal. The seed crystal may have crystalline edges of equivalent crystallographic orientation

A method for forming a film by atomic layer deposition wherein vertical growth of a film is controlled, includes: (i) adsorbing a metal-containing precursor for film formation on a concave or convex surface pattern of a substrate; (ii) oxidizing the adsorbed precursor to form a metal oxide sub-layer; (iii) adsorbing a metal-free inhibitor on the metal oxide sub-layer more on a top / bottom portion than on side walls of the concave or convex surface pattern; and (iv) repeating steps (i) to (iii) to form a film constituted by multiple metal oxide sub-layers while controlling vertical growth of the film by step (iii). The adsorption of the inhibitor is antagonistic to next adsorption of the precursor on the metal oxide sub-layer

Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate 1, an AlN nucleation layer 3 formed on the sapphire substrate 1, a pulsed supplied AlN layer 5 formed on the AlN nucleation layer 3, and a continuous growth AlN layer 7 formed on the pulsed supplied AlN layer 5. Formed on the continuous growth AlN layer 7 is at least one set of a pulsed supplied AlN layer 11 and a continuous growth AlN layer 15. The AlN layer 3 is grown in an initial nucleation mode which is a first growth mode by using an NH3 pulsed supply method. The pulsed supplied AlN layer 5 is formed by using NH3 pulsed supply in a low growth mode which is a second growth mode that increases a grain size and reduces dislocations and therefore is capable of reducing dislocations and burying the nucleation layer 3. The continuous growth AlN layer 7 is a fast vertical growth mode that improves flatness and suppresses crack occurrences. As examples of the thickness of layers; the pulsed supplied AlN layer 5, 11 is 0.3 μm and the thickness of the continuous growth AlN layer 7, 15 is 1 μm, for example. Characteristics of conditions under which layers are grown are as follows. The AlN layer 3 is grown under a high temperature and a high pressure with a low V-III ratio (less N). The pulsed supplied AlN layer 5 is grown at a low temperature and a low pressure with a high V-III ratio (more N). The continuous AlN layer 7 is grown at a high temperature and a high pressure with a high V-III ratio (Al rich and less N) without using an NH3 pulsed supply AlN growth method.

A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure 101 with electrical conductivity. The principal surface of the substrate structure 101 has at least one vertical growth region, which functions as a seed crystal for growing a nitride-based semiconductor vertically, and a plurality of lateral growth regions for allowing the nitride-based semiconductor that has grown on the vertical growth region to grow laterally. The sum ΣX of the respective sizes of the vertical growth regions as measured in the direction pointed by the arrow A and the sum ΣY of the respective sizes of the lateral growth regions as measured in the same direction satisfy the inequality ΣX / ΣY>1.0.

The invention discloses a preparation method of positive material for cobalt nitride / porous carbon plate / carbon cloth self-supported lithium-sulfur battery, belongs to the field of electrochemical energy storage of new energy material. The preparation method comprises the following steps: using a metal organic skeleton compound as a precursor, carbon cloth as a carrier, a metal organic skeleton compound vertically and uniformly grow on the flexible carbon cloth, performing treatment such as carbonization and nitridation to obtain cobalt nitride particles embedded nano carbon plate. The porousnano carbon plate is loaded on the fiber surface of the carbon cloth in a vertical growth manner and shows good electrochemical performance as the positive material of the lithium-sulfur battery. Thecompound self-supported lithium-sulfur battery positive material disclosed by the invention has developed pore structure, greatly shortens the diffusion distance of substances such as ions, electronsand electrolyte; the cobalt nitride particles with nano size adsorbs and catalytically converts the polysulfide, so the dissolution and shuttling of the polysulfide are effectively inhabited, the electric conductivity of the material is greatly improved by the carbon cloth and the application prospect is wide.

Deposited layers are advantageously obtained by utilizing a specific hydride vapour phase epitaxy deposition procedure. In this procedure, a vertical growth cell structure with extended diffusion layer, a homogenising diaphragm, sidewall purging gases, anal independent gas and substrate heaters is used for the deposition of III-V and VI compound semiconductors. This gas flow is uniformly mixed through the extended diffusion layer and directed so that it contacts the full surface of the substrate to produce high quality and uniform films. Exemplary of such gas flow configurations are the positioning of a substrate at a distance from the gas outlets to allow the extended diffusion and a diaphragm placed in a short distance above the substrate to minimise the impact of the convection effect and to improve the uniformity. This symmetrical configuration allows easy scale up from a single wafer to multi-wafer system. This vertical configuration allows the quick switching between different reactive gas precursors so that time modulated growth and etch processes can be employed to further minimise the defects density of the deposited materials.

Lateral epitaxial overgrowth of non-polar III-nitride seed layers reduces threading dislocations in the non-polar III-nitride thin films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the non-polar III-nitride films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.

A multi-stage, plant growing system is configured for high density growth and crop yields and includes among other things, towers or vertical growth columns, an enclosed controlled environmental growth chamber, interchangeable growth modules, and control systems capable of machine learning wherein the crops are optimally spaced and continually staged in their planting cycles utilizing special growth modules to provide an accelerated and continuous annual production yield. A vertical growth tower for vertical farming comprising a plurality of growth modules, each growth module comprising an enclosure configured to securely hold at least one plant; a drain aperture in the enclosure; and at least one lateral growth opening in the enclosure configured to permit and to encourage lateral growth of the at least one plant away from the enclosure; wherein one or more of the growth modules is configured to stackably support one or more of the other growth modules above and / or below itself within the vertical growth tower.

Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate 1, an AlN nucleation layer 3 formed on the sapphire substrate 1, a pulsed supplied AlN layer 5 formed on the AlN nucleation layer 3, and a continuous growth AlN layer 7 formed on the pulsed supplied AlN layer 5. Formed on the continuous growth AlN layer 7 is at least one set of a pulsed supplied AlN layer 11 and a continuous growth AlN layer 15. The AlN layer 3 is grown in an initial nucleation mode which is a first growth mode by using an NH3 pulsed supply method. The pulsed supplied AlN layer 5 is formed by using NH3 pulsed supply in a low growth mode which is a second growth mode that increases a grain size and reduces dislocations and therefore is capable of reducing dislocations and burying the nucleation layer 3. The continuous growth AlN layer 7 is a fast vertical growth mode that improves flatness and suppresses crack occurrences. As examples of the thickness of layers; the pulsed supplied AlN layer 5, 11 is 0.3 μm and the thickness of the continuous growth AlN layer 7, 15 is 1 μm, for example. Characteristics of conditions under which layers are grown are as follows. The AlN layer 3 is grown under a high temperature and a high pressure with a low V-III ratio (less N). The pulsed supplied AlN layer 5 is grown at a low temperature and a low pressure with a high V-III ratio (more N). The continuous AlN layer 7 is grown at a high temperature and a high pressure with a high V-III ratio (Al rich and less N) without using an NH3 pulsed supply AlN growth method.

A method of propagating a fracture farther from a well-bore into an oil and / or gas-bearing zone of a target formation while inhibiting growth of the fracture into an adjacent water-bearing zone under or over the oil and / or gas-bearing zone, comprises creating a zone of increased in-situ stress a vertical distance adjacent a target interval and then creating a main fracture in the target interval by, for example, fracturing the target interval with enough fracture fluid and pressure to propagate the main fracture, inter alia, vertically to the zone of increased in-situ stress. When vertical growth of the main fracture reaches the limit set by the zone of increased stress, additional fracture fluid pumped into the target interval tends not to propagate the main fracture vertically beyond that limit and, instead, tends to propagate the main fracture more laterally and farther from the well. Such zone(s) of increased in-situ stress can be created above, below, or both above and below the target interval.

The invention provides a structural frame which guarantees the straight growing of trees in initial stages after being transplanted. The structural frame comprises a base, support bars which are installed on the base and clamping mechanisms which are installed on the support bars. The base is an open annular base, three support bars are installed on the base by a fixedly rotary hinge, the clamping mechanisms are composed of movable tappings installed on the top end of each support bar, fastener bottom cuts and tooth form clips installed on the top end of a support bar through a fastener rotating shaft, and bandages threaded in the movable tappings. The structural frame which guarantees the straight growing of trees in initial stage after being transplanted of the invention has simple structure, can be assembled and dissembled and make self-adjustment to adapt to trees with diameters within a certain size range. The structural frame is essentially applied to helping the straight growing of the trees at the initial stage after being transplanted and can be dismantled, recycled and reused after the root systems of the trees are stable, thereby having low cost but good effect.

The invention discloses a preparation method of a wood-based flexible composite electrode material, comprising the steps of: slicing wood in a vertical growth direction to prepare a cross-section woodsubstrate; immersing the substrate in a buffer mixed liquid for delignification, and freeze-drying the substrate to obtaining a flexible wood substrate; immersing the flexible wood substrate in a carbon nanotube dispersion for a ultrasonic-hydro-thermal treatment, and by means of a wood graded porous structure, enabling the hydroxyl groups on the lignocelluloses and the carboxyl groups on the acidified multi-wall carbon nanotube to form hydrogen bonds such that the carbon nanotube is self-assembled onto the surface of the wood and a pore canal to obtain a flexible wood conductive substrate; putting the conductive substrate in a mixed solution of KMnO4 and K2SO4 for a reduction reaction, and finally obtaining the wood-based flexible composite electrode material. The method of the inventionhas a simple preparation process, a mild reaction condition, contributes to industrial production, and can be widely applied to the fields of electrics, intelligent response materials and electromagnetic shielding materials.

The invention relates to an evaluation method for reservoir distribution of a supergene karst of a carbonatite. The method comprises the following steps that features of the supergene karst are identified, a logging response standard for the supergene karst structure is established, the cyclicity of the supergene karst structure is divided, growth differences of different karst cyclicity are compared, and distribution benefit for the karst reservoir is evaluated. On the basis of analysis on geological and logging data, the karst cyclicity caused by change of the reference surface of karst in the supergene karst generating process is considered, and the multi-cyclicity of the supergene karst is divided and compared according to the geology observation and logging discrimination; and the cyclicity of the supergene karst and the discovered karst reservoir are analyzed in a combined manner to determine the karst cyclicity and vertical growth segments benefit for growth of the karst reservoir, the planar distribution of the corresponding karst cyclicity is used to determine planar distribution benefit for the karst reservoir, the disadvantages in evaluating the karst reservoir via the supergene karst structure are overcome, evaluation for the karst reservoir satisfies the practical geological evolution history more, the evaluation result is more accurate, and the success rate of exploration is effectively improved.

The invention provides a one-dimensional copper oxide nano-array glucose sensor electrode material and a preparation method thereof. The one-dimensional copper oxide nano-array glucose sensor electrode material is characterized in that a one-dimensional copper oxide nano-array grows on a copper sheet in situ. The preparation method comprises the following steps of based on a three-electrode system, etching the surface of a copper substrate by an anodic oxidation method and carrying out calcination so that a large-area, compact and uniform copper oxide nano-array is formed on the copper substrate. The preparation method has the advantages of mild reaction conditions, simple operation and low cost. The one-dimensional copper oxide nano-array glucose sensor electrode material has structural advantages such as obvious size effect, high specific surface area and high activity site expose. Through vertical growth orientation and independent constitutional units, the one-dimensional copper oxide nano-array glucose sensor electrode material has good conductivity and a good electron transmission capability. Therefore, in electroanalysis detection of a glucose oxidation reaction, the one-dimensional copper oxide nano-array glucose sensor electrode material has excellent sensitivity, a very wide linear range, a very low detection limit, good selectivity, good repeatability and good stability.

The invention relates to a selenium rhenium sulfide composite two-dimensional material and a preparation method and application thereof; the preparation method comprises the steps of (a) dissolving ammonium perrhenate and thiourea in an organic solvent to form a first solution; (b) dissolving selenium powder in hydrazine hydrate to obtain a second solution; (c) mixing the first solution and the second solution, and pouring the mixture in a reactor with a substrate to carry out hydrothermal reaction; after the hydrothermal reaction, cooling, and taking out the substrate. By controlling minor doping of sulfur, a selenium rhenium sulfide nanosheet with high coverage, good distribution uniformity and small size is obtained on the substrate, the size of the nanosheet reaches 50-100 nm; the nanosheet with high coverage and vertical growth can provide larger specific surface area, and greater current density is provided in electric catalysis. By adjusting doping quantity of sulfur, the electronic structure of the material is adjusted, hydrogen absorption free energy of the material is lowered, conductivity of the material is improved, more defects and active sites are created, and the electrocatalytic performance of the material is improved.

The present invention relates to a method of fusion for heteroepitaxial layers and overgrowth thereon. According to the present invention, a high quality heteroepilayer can be formed by patterning a fused semiconductor layer, overgrowing it with a persistent patterned character, and fusing other semiconductors having different lattice constants by means of utilizing the rate difference between the lateral growth rate and the vertical growth rate exhibited, on the above process. Further, according to the present invention, the lattice constant difference of the two semiconductors can be overcome and a high quality quantum structure can be formed. According to the present invention, the junction of two semiconductor materials having different lattice constants, as well as a good overgrowth on heteroepitaxial layers can be carried out. Accordingly to the present invention, the base material from which the new, as yet on realized, conceptive optoelectronic device can be made.

The invention relates to the technical field of manufacture of solar batteries, in particular to a highly-oriented two-dimensional hybrid perovskite thin film regulated and controlled by a substrate and a preparation method thereof. The perovskite thin film is a two-dimensional sheet thin film with high orientation and a thickness of 400-450 nm prepared by taking a two-dimensional tin oxide nano sheet thin film with high crystallinity, vertical growth and porosity as a substrate. The preparation method of the highly-oriented two-dimensional hybrid perovskite thin film mainly comprises the following steps: firstly, cleaning a conductive glass substrate and then blow-drying; putting the conductive glass substrate in an aqueous solution of SnCl2 for reaction, obtaining a SnO2 nano thin film after cleaning and blow-drying and then depositing the perovskite thin film on the SnO2 nano sheet thin film through a two-step method. The organic-inorganic hybrid perovskite thin film provided by theinvention is high in crystallinity and not only has vertical growth characteristics during crystallization under the influence of a titanium oxide substrate shape limiting region, but also has high stability.

A method and an apparatus for manufacturing a directionally solidified columnar grained article with a reduced amount of secondary misorientation of the columnar grains. The method employs a casting assembly comprising a mold with a cavity, a selector section at a lower end of the mold, a heating chamber and a cooling chamber. The mold is fed with a liquid metal and then removed from the heating chamber to the cooling chamber where the columnar grained article is solidified. The article is solidified with at least two dendrites or grains emerging from the selector section and entering the main cavity of the shell mold. Further, the selector section is configured so that no dendrite or grain grows from the bottom of the selector section into the shell mold cavity along a continuous path of purely vertical growth.

The invention relates to a device for evaluating the vertical growth avoidance of plant roots from pollutants. The device comprises a housing, separators, guide rails, a scanning device and an actuator. The housing includes a base and a sidewall disposed on the base; the base and the side wall form the housing into a cavity with an opening; the separators are disposed in the housing and in the number of two or more; the separators are provided with through holes; the through holes are internally provided with an agar layer; two or more of the separators are respectively disposed on the side wall along a direction from the base to the opening and separate the cavity into more than two closed sub cavities; the guide rails are disposed outside the housing along the circumferential direction of the side wall; the scanning device is slidably disposed on the guide rails; and the actuator drives the scanning device to slide along the guide rails. The invention also relates to a method for evaluating the vertical growth avoidance of plant roots from pollutants. The evaluation apparatus and method of the present invention also have the advantages of significant improvement on test reproducibility and sensitivity of the monitoring.

The invention discloses a heterojunction photoelectric sensor and a preparation method thereof. The photoelectric sensor comprises a substrate, two metal electrodes fixedly arranged on the substrate,and a molybdenum disulfide thin film and a vertical growth graphene embedded carbon film which are stacked on the substrate, wherein a partially overlapped region is arranged between the molybdenum disulfide thin film and the vertical growth graphene embedded carbon film; photoelectric heterojunctions are formed in the partially overlapped region through Van der Waals interaction; and the two non-overlapping ends of the molybdenum disulfide thin film and the vertical growth graphene embedded carbon film are respectively stacked on the surfaces of the two metal electrodes. The photoelectric heterojunctions formed by stacking the molybdenum disulfide thin film and the vertical growth graphene embedded carbon film can effectively promote the response sensitivity of the photoelectric sensor, and the photoelectric sensor is wider in detection range and higher in detection capacity.

The present invention provides improved attachment devices fort support lines in plant growth support systems (e.g., trellis systems) and methods of using the same, and offers significant improvements efficiency with regard to assembling and disassembling the support systems for plant and crop growth. The attachment devices may be advantageously used for various vine and low-lying plants (e.g., grapes, tomatoes, etc.) that can be grown in a trellis system or other vertical growth support system. The anchoring devices may include a wire loop for slipping over an end post and a wire strainer bracket attached to the wire loop.

The invention provides a method for preparing a carbon nanotube array supported lithium titanate flexible electrode material. A carbon nanotube array is grown on a catalyst-supported carbon cloth by achemical vapor deposition method to be a flexible substrate, and the carbon nanotube array supported lithium titanate flexible electrode material is prepared through a sol-gel method and a high-temperature calcination process. The method comprises the steps of loading a carbon nanotube catalyst on the carbon cloth by using a dipping method, performing in-situ vertical growth of the carbon nanotube array by using the chemical vapor deposition method, and preparing the carbon nanotube array supported lithium titanate flexible electrode material by using the sol-gel method and a high-temperaturecalcination method.

The invention discloses a vertical cavity surface-emitting laser (VCSEL). The VCSEL includes a base region that has a vertical growth part laterally adjacent a first optical reflector and a lateral growth part that includes nitride semiconductor material vertically over at least a portion of the first optical reflector. An active region has at least one nitride semiconductor quantum well vertically over at least a portion of the lateral growth part of the base region and includes a first dopant of a first electrical conductivity type. A contact region includes a nitride semiconductor material laterally adjacent the active region and a second dopant of a second electrical conductivity type opposite the first electrical conductivity type. A second optical reflector is vertically over the active region and forms with the first optical reflector a vertical optical cavity overlapping at least a portion of the at least one quantum well of the active region. A method of fabricating a VCSEL also is described.

The invention provides an auxiliary device for green plant cultivation in an arid region. The auxiliary device comprises a cultivation bucket body, cultivation soil and a plastic woven net layer. Thecultivation bucket body is provided with twelve outer walls in an annular array way, the outer walls jointly form a plant root system emergency structure through round through holes longitudinally distributed in each outer wall, and the round through holes of each outer wall are all communicated with a cultivation cavity and an annular partition groove. Six groups of annularly distributed partition devices are arranged in the annular partition groove, and the annular partition groove is filled and sealed by the six groups of annularly distributed partition devices jointly. By forming the roundthrough holes, growth of plants cultivated in the cultivation cavity for a period of time is facilitated, then root systems of plants can penetrate through the round through holes to facilitate improvement of the stability of the auxiliary device in desert land, vertical growth of the root systems towards deep positions is facilitated, and moisture in the deep positions of soil is absorbed, so that the auxiliary device does not limit growth of cultivated plants.

The invention provides a preparation method of a graphene anticorrosive coating on a stainless steel surface, relates to a preparation method of an anticorrosive coating on a stainless steel surface and aims at solving the problems that an existing stainless steel material does not have corrosion resistance in an acid environment of a fuel cell and cannot have relatively long service life in the high-temperature fuel cell. The method comprises the steps of (1) pretreatment of the stainless steel surface; (2) preparation of an graphene oxide solution; (3) prearrangement of a graphene oxide layer on the stainless steel surface; (4) treatment of the graphene oxide layer on the stainless steel surface; and (5) vertical growth of in-situ graphene on the stainless steel surface, thereby completing the preparation method of the graphene anticorrosive coating on the stainless steel surface. The preparation method of the graphene anticorrosive coating on the stainless steel surface provided by the invention is used as the preparation method of the graphene anticorrosive coating on the stainless steel surface.