39 results about "Surface trap" patented technology

A fluorine treatment that can shape the electric field profile in electronic devices in 1, 2, or 3 dimensions is disclosed. A method to increase the breakdown voltage of AlGaN / GaN high electron mobility transistors, by the introduction of a controlled amount of dispersion into the device, is also disclosed. This dispersion is large enough to reduce the peak electric field in the channel, but low enough in order not to cause a significant decrease in the output power of the device. In this design, the whole transistor is passivated against dispersion with the exception of a small region 50 to 100 nm wide right next to the drain side of the gate. In that region, surface traps cause limited amounts of dispersion, that will spread the high electric field under the gate edge, therefore increasing the breakdown voltage. Three different methods to introduce dispersion in the 50 nm closest to the gate are described: (1) introduction of a small gap between the passivation and the gate metal, (2) gradually reducing the thickness of the passivation, and (3) gradually reducing the thickness of the AlGaN cap layer in the region close the gate.

An exhaust gas purification filter 100 includes: a honeycomb structure 10 having partition walls 12, plugging portions 13, and a surface trapping layer 14 having an average pore size of 0.1 μm or more and 5 μm or less, a porosity of 50% or more and 80% or less, and a thickness of 1 μm or more and 50 μm or less. The partition walls 12 have a thickness of 0.05 mm or more and 0.18 mm or less and an average pore size of 10 or more and 18 μm or less, and the proportion of the volume of the pores having a size of twice the average pore size or more in the entire pore volume in a pore size distribution of the partition walls 12 is 5% or more and 40% or less.

The invention relates to a solar water surface light trap which comprises a water surface positioning bed frame, a solar cell plane and an optical control light trap, wherein the water surface positioning bed frame adopts a frame structure, and a dynamic instrument cabin and frame-shaped floating balls are respectively arranged at the center of the bottom and around the bottom of the frame structure; an anchorage hoist, a drawstring duct and a storage battery are arranged in the dynamic instrument cabin; the solar cell plane is mounted on the top surface of a cell plane platform, and the optical control light trap is mounted in a cover-shaped lamp holder and provided with an optical control switch. The solar cell plane is utilized to absorb solar energy and convert the solar energy into electrical energy, and the optical control light trap is utilized to attract insects to the water surface for feeding fish, so that the fish farming cost is reduced, the quality of fish is improved, moreover, fish farmers can know the growth situation of fish at any time. Therefore, the solar water surface light trap has the advantages of being reasonable in structure and convenient to use and can provide high-quality and pollution-free green aquatic products for people.

A gas detection device is provided having a substrate. A sensing element is coupled to the substrate and constructed and arranged to sense a target gas. A top surface is positioned on the sensing element opposite the substrate. A dopant is disposed within the sensing element. The dopant enhances the ability of the sensing element to sense the target gas. An electric field is applied to the dopant to constrain the dopant at or near the top surface of the sensing element.

The invention discloses a gallium nitride transistor structure and a preparation method thereof. The gallium nitride transistor structure includes a substrate 1; a GaN-based buffer layer 2 on the substrate 1; an In on the GaN-based buffer layer 2. x al y Ga 1‑x‑y N / GaN heterojunction epitaxial structure; on In x al y Ga 1‑x‑y The source 6 at one end of the surface of the N / GaN heterojunction epitaxial structure; x al y Ga 1‑x‑y The drain 5 at the other end of the surface of the N / GaN heterojunction epitaxial structure; x al y Ga 1‑x‑y The p-type oxide thin film and the gate 7 on the surface of the N / GaN heterojunction epitaxial structure. The present invention is passed in In x al y Ga 1‑x‑y A p-type oxide film is set between the source 6 and the drain 5 on the surface of the N / GaN heterojunction epitaxial structure, and the GaN transistor structure obtained by p-type oxide intercalation can suppress the current collapse effect, and utilize the p-type oxide The holes neutralize the electrons trapped by the surface traps, alleviating the dummy gate effect.