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SiC SBD device with semi-floating structure, and preparation method thereof

A floating and device technology, applied in the field of SiC SBD devices with semi-floating structure and their preparation, can solve the problems of low reverse leakage, limited commercialization, and difficulty in obtaining, and achieve the effect of reducing reverse leakage

Active Publication Date: 2021-04-20
FUDAN UNIV
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Problems solved by technology

However, reducing the Schottky barrier will also increase the reverse bias current under the same surface electric field while reducing the turn-on voltage, which makes it difficult for the device to obtain lower of reverse leakage, which limits its commercial

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  • SiC SBD device with semi-floating structure, and preparation method thereof
  • SiC SBD device with semi-floating structure, and preparation method thereof
  • SiC SBD device with semi-floating structure, and preparation method thereof

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Embodiment Construction

[0019] The technical solutions of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0020] 1. The specific structure of the SiC SBD device with a semi-floating structure

[0021] In the embodiment, an improved structure of a JBS-like SBD device is disclosed. Its active region structure is as figure 1 As shown, the structure of the non-active region is as image 3 As shown, the schematic diagram of the corresponding relationship between the layout of the active region structure and the non-active region structure is shown in Figure 5 shown.

[0022] It includes an active area and a non-active area. The active area and the non-active area include a SiC substrate 100 of the first doping type, a SiC epitaxial layer 101 of the first doping type grown on the substrate, and an epitaxial layer 101 of the first doping type grown on the substrate. The second doping type surface well 102, the anode 110 and the ca...

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Abstract

The invention discloses a SiC SBD device with a semi-floating structure, and a preparation method thereof. The SiC SBD device comprises an active region and a non-active region, wherein the active region and the non-active region comprise a SiC substrate of a first doping type, a SiC epitaxial layer of the first doping type grown on the substrate, a surface trap of a second doping type formed by injection on the surface of the epitaxial layer, an anode and a cathode; a JFET region of the first doping type is arranged between the adjacent second doping type wells of the active region, and a floating doping region of the second doping type is arranged below the JFET region; and a second doping type surface trap and a floating doping region are arranged at the lower position between the adjacent second doping type traps of the non-active region and are communicated with the interior of the corresponding region in the active region. The SiC SBD device with the semi-floating structure can limit the electric field intensity of the Schottky contact surface during reverse bias, so reverse electric leakage of the SiC SBD device is reduced.

Description

technical field [0001] The invention relates to the technical field of design and manufacture of SiC power devices, in particular to a SiCSBD device with a semi-floating structure and a preparation method thereof. Background technique [0002] The SiC SBD device is a single-carrier rectifier device, which belongs to diode products, and is mainly used in power supply and power processing systems to control electric energy conversion. Compared with traditional Si-based power devices, SiC devices are easier to achieve high voltage, so the Schottky structure can be used at medium and high voltages to reduce the loss of Si devices during switching, and thus gradually become the mainstream of the market. For SBD devices, its main parameters include forward voltage drop VF, breakdown voltage BVDSS, and leakage IDSS. Among them, VF determines the power consumption of the device when it is turned on. Therefore, reducing VF is the main goal of further improving device performance. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/06H01L29/16H01L21/329
Inventor 孙博韬张清纯
Owner FUDAN UNIV
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