Surface processing technology for improving GaN HEMT passivation effect and reducing current collapse

Abstract

The present invention discloses a surface processing technology and a method for improving the surface passivation effect of the gallium nitride-based electronic device and reducing the current collapse. The method is mainly applied to the preparation of the gallium nitride-based electronic device, before the conventional passivation layer deposition, ozone, oxygen plasma and other strong oxidants are used on the surface of gallium nitride for oxidation, then hydrochloric acid is used to remove a thin layer of oxide, and the process is repeated for a number of cycles before the surface passivation to completely remove surface defects, so as to get a relatively perfect surface, thereby improving the surface passivation effect, reducing the current collapse caused by the surface trapping effect.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to the preparation of gallium nitride-based electronic devices Background technique [0002] GaN materials have attracted much attention due to their superior properties such as large band gap, high saturation electron drift velocity, strong critical breakdown electric field, and high thermal conductivity. Compared with other III-V semiconductor materials, the GaN-based heterojunction can generate a very high concentration of two-dimensional electron gas through a strong spontaneous polarization effect when it is not doped, making it the third-generation semiconductor material. first choice. The superior performance of GaN material makes it have broad application prospects in the fields of radio frequency microwave and power electronics. [0003] GaN-based electronic devices are mainly based on AlGaN / GaN heterojunction structures. As mentioned above, in the conventional AlG...

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Problems solved by technology

At present, the commonly used methods in the industry include surface treatment based on nitrogen, ammonia, and oxygen plasma, but the plasma will cause damage on the surface of GaN, which will further aggravate the current collapse; and the above-mentioned surface cannot remove the defect layer on the surface of GaN , a new film may be formed on the surface of GaN to reduce surface passivation; the surface nitride and oxidation of GaN are self-stopping, and one-time treatment cannot completely remove the defects on the surface of GaN

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