Plasma jet deposition film device and method of shallowing surface trap level

Abstract

The invention discloses a plasma jet deposition film device and a method of shallowing a surface trap level. The device comprises a plasma jet array, a bubbling bottle, a second air cylinder and a power supply. The plasma jet array is arranged in a tempered glass cavity and comprises a quartz tube, a hollow metal capillary tube, a copper foil and a three-dimensional mobile platform, wherein the hollow metal capillary tube is interspersed into the quartz tube, and the outer wall of the hollow metal capillary tube is not in contact with the inner wall of the quartz tube; the copper foil is arranged in the bottom of the quartz tube for grounding; the three-dimensional mobile platform is arranged right below the quartz tube to regulate movement of a sample; one end of the bubbling bottle is connected to a first air cylinder while the other end is connected to the upper orifice of the hollow metal capillary tube; the second air cylinder is connected to the upper orifice of the hollow metalcapillary tube; and the power supply is connected to the hollow metal capillary tube.

Description

technical field [0001] The invention relates to the field of electrochemistry, in particular to a plasma jet deposition thin film device and a method for shallowing the energy level of surface traps. Background technique [0002] There are many kinds of epoxy resins and they are developing rapidly. By adding different types of curing agents, toughening agents, inorganic fillers, etc., their insulation properties can be effectively improved. The cured epoxy resins rely on their good dielectric properties, mechanical properties and sealing properties. etc., are widely used in power electronic devices and large-capacity DC transmission systems, and have become an indispensable insulating material in the electrical field. Under high field strength, lattice defects such as stacking faults and dislocations are easy to form at the three contact surfaces of metal conductor / insulating medium / gas, and it is difficult for carriers trapped by deep traps to escape, and the gradually accu...

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Problems solved by technology

By implanting N ions and C ions on the surface of insulating materials, the surface roughness, hydrophobicity, electrical conductivity and surface structure all change, and the polymer surface undergoes molecular chain scission, crosslinking and graphitization, forming dense crosslinking. layer, which can hinder the injection of charges, increase the breakdown field strength, and fill the surface potential energy traps to reduce the amount of trapped charges, but ion implantation consumes a lot of energy and requires expensive high-vacuum equipment

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