61results about How to "Strong focus" patented technology

The invention discloses an optical device of a flexible implantable nerve photoelectrode, which is arranged on a flexible polymer substrate and includes: an input grating, a waveguide and an output grating, the input grating is a parallel grating for coupling incident light, and the input of the waveguide The end of the waveguide is coupled to the input grating, the output end of the waveguide is coupled to the output grating, and the output grating is a focusing grating, which is used to couple and focus light on the recording electrode to provide optical stimulation with single-cell resolution. The invention also discloses the design and preparation method of the optical device. The optical device of the flexible implantable neural photoelectrode provided by the present invention provides single-cell resolution optical stimulation and in-situ recording through the design of the waveguide and grating; the small size of the device can reduce implant damage, and it has low loss and high Coupling and strong focusing; its high integration is conducive to the realization of multi-channel, high-density nerve stimulation and recording; the use of flexible polymer substrates can reduce the formation of nerve scars and achieve long-term stable work in vivo.

The invention relates to an electromagnetic-signal-time-inversion-based fault point positioning method for a transmission line. On the basis of an electromagnetic time inversion principle, a single observation point is set at any terminal in a power distribution network and a fault high-frequency transient signal within a limited period of time is measured and recorded; and time inverted sequenceprocessing is carried out on the measured signal, the processed signal is injected into a power distribution network simulation calculation model at an observation point, norm values at different guess positions in the power distribution network are calculated, and a fault position is determined by searching for a maximum peak value and a maximum energy root value. According to the method different form the traditional traveling wave determining method and impedance method, a power distribution network with a complex topological structure can be covered by one observation point without being affected by the fault impedance; and the excellent anti-noise performance is realized. The electromagnetic-signal-time-inversion-based fault point positioning method has the great practical value in fault positioning of the transmission line.

The invention provides a metal interconnection structure having a porous dielectric layer. The metal interconnection structure is characterized in that a through hole structure is formed in a porous dielectric layer; and the edge part of the through hole is lower than the upper surface of an interconnection line in a lower dielectric layer. A first groove structure is formed around the interconnection line in the lower dielectric layer. The through hole structure in the porous dielectric layer is formed by etching by using femtosecond laser. During the etching process, the exposed hole structure in the porous dielectric layer is melted partially to seal the exposed hole structure. A metal interconnecting structure is formed in the through hole structure and is in contact with the upper surface and the part of side surface of the interconnection line; and a sealing layer is formed above the metal interconnecting structure and has one part arranged at the top surface of the metal interconnecting structure and one part arranged in a second groove structure around the top surface below the top surface.

The present invention relates to a method for designing an integrated circuit with a porous dielectric layer. The method controls an integrated circuit design tool (femtosecond laser device) through a computing device. The method does not require the use of a mask process, thus eliminating the need for a reticle. It breaks through the limitation of the mask plate, does not use toxic developing steps, and also saves the "blocking" process of the exposed pore structure of the porous medium layer, reduces the preparation process, shortens the preparation process, saves costs, and The stability and reliability of the semiconductor device are improved.