80results about How to "Simplify process complexity" patented technology

The method is: Put many glass pipe in order to form a specific structure (photon crystal optical fibre prefab stick) in the glass cannula. The thin glass pipe is longer then the others. The equipment controls the pressure of photon-crystal optical fibre prefab stick. In another word is to vacuum the glass cannula, to input the thin glass pipe of 10 -1 mbar air.

The invention provides an optical anti-fake element and a production method thereof, aiming to overcome defects that processes in the prior art are complicated and it's difficult to realize color matching due to difficulty in accurately controlling thickness of coating layers of two types of coating structures in the prior art. The optical anti-fake element comprises a substrate (1) consisting of a first surface (31) and a second surface (32). Part of the first surface (31) is of a sub-wavelength micro-relief structure while another part thereof is of a flat surface structure; a first medium layer, a second medium layer and a third medium layer are sequentially superposed on the sub-wavelength micro-relief structure and the flat surface structure; colors of the sub-wavelength micro-relief structure and the flat surface structure are the same when observed in specific viewing angle, and are different when observed in other angles.

An edge enhancement method and apparatus for Bayer images are provided. The apparatus stores the raw Bayer image data into a line buffer. After having directly read the raw Bayer image data from the buffer, the apparatus computes luminance characteristic values, analyzes the edge characteristic and then outputs the edge characteristic values. According to the edge characteristic values, the edges in the raw Bayer image data are enhanced. The apparatus simplifies the processing complexity of the rear-stage circuit by directly enhancing the edges in the Bayer image, and is easily combined with the post image processing mechanism. Conventionally, the raw Bayer image is converted to the RGB image or the YUV image and then the edge enhancement operation is performed. The invention reduces the computing volume and memory size. Also, performing the edge enhancement operation in advance helps to identify the interpolation direction and ease the annoying noise.

The invention discloses an oxide film transistor comprising an insulation substrate, a gate medium layer, a grid electrode arranged on one side of the gate medium layer, a source electrode and a drainelectrode arranged on the other side of the gate medium layer, and a channel layer between the source electrode and the drain electrode; the gate medium is a solid electrolyte with proton conductivecharacteristics, and a grid electrode bias pulse can be applied to regulate a transistor threshold voltage; the oxide film transistor can be either of the following structure types: a bottom gate topcontact type, a bottom gate bottom contact type, a top gate top contact type, a top gate bottom contact type, and a bottom gate and top gate combined type. The oxide film transistor can effectively reduce the work voltage; the grid electrode bias voltage can be applied to regulate the device threshold voltage according to needs, thus simplifying the process complexity, and reducing the process cost.

The invention discloses a traditional Chinese medicinal material washing and treating device which comprises a barrel. A barrel cover is arranged over the barrel, a motor is arranged in the center ofthe upper surface of the barrel cover, a heating control device is arranged on one side of the motor, a water inlet is formed in the position, located on the other side, of the barrel cover, a rotating shaft is connected to the lower end of the motor and is fixedly provided with blades, a screen drum is fixed into the barrel, and a liquid cavity is formed between the screen drum and the barrel; and an ultrasonic wave transmitting device is further arranged on the inner wall of the screen drum, discharging openings which are through are formed in the screen drum and the middle of the bottom ofthe barrel, a water discharging opening communicated with the liquid cavity is formed in the bottom end of the barrel, and a water inlet device and a water outlet device are arranged in the exterior of the barrel. By means of the washing and treating device, the effect of removing impurities in traditional Chinese medicinal materials can be remarkably improved, the washing efficiency is high, operation is easy, washing and drying treatment can be integrated together, a mechanical structure and the traditional Chinese medicinal material treating process complexity are simplified, and the use and popularization value is achieved.

The invention discloses a method for acquiring and transmitting fault signals of rail traffic vehicles. The method comprises the following steps: acquiring environment energy from an external environment, and converting the environment energy into electric energy; supplying power by using the electric energy and then acquiring traveling information, and carrying out fault diagnosis according to the traveling information on the basis of astronomical clock synchronous data stream and/or variable speed reconstructed data stream to obtain a diagnosis, wherein the traveling information comprises temperature information and accelerated speed information of a diagnosis object of a vehicle traveling portion; and judging whether faults exist or not according to the diagnosis. By the method, the process complexity of product loading can be greatly simplified, and rapid retrofitting of an existing vehicle is implemented. The invention further discloses a device for acquiring and transmitting fault signals of rail traffic vehicles. The device has the foregoing beneficial effects.

The invention discloses a manufacturing method of a hollow nanotube structure, comprising the following steps: preparing a substrate; forming a crystal seed layer on the substrate first, then generating a nanowire with a predetermined dimension on the crystal seed layer at relatively low temperature by using hydrothermal method; forming an outer coating layer on the surface of the nanowire; selectively etching the top of the outer coating layer to expose the top of the nanowire; and removing the whole nanowire and keeping the hollow outer coating layer to form a plurality of hollow nanotubes. The method is beneficial to simplify the nanotube technology, improve the dimension precision of the nanotubes and improve the photoelectric properties of elements.

The instant disclosure relates to an improved method for the production of solid electrolytic capacitor, comprising the following steps. First, provide an insulating substrate. Next, form a plurality of conducting gels including aluminum powder on the insulating substrate. Thirdly, execute a high-temperature sintering process to metalize the conducting gels to form a plurality of aluminum plates. Next, form a dielectric layer on every aluminum plate. Then form an isolation layer on every dielectric layer to define an anodic region and a cathodic region. Lastly, form a conductive layer on the dielectric layer of every cathodic region, thus defining a solid electrolytic capacitor unit.

The invention provides a domain name system DNS server distribution method, device and system, and the method comprises that: a session management function SMF receives a session establishment requestmessage sent by terminal UE, and the request message comprises the name of a data network to be accessed by the UE; the SMF acquires a first DNS server IP address according to the data network name and the geographic position of the UE; and the SMF sends a session establishment response message to the UE, wherein the response message comprises the first DNS server IP address. The scheme is mainlyused in a 3GPP core network, and the 3GPP core network can dynamically allocate a DNS server located in a local data network to the UE according to the position of the local network accessed by the UE.

The invention consists of the base board, the ternary nitride buffer layer formed on the base board, the first conducting nitride semiconductor layer formed on the ternary nitride buffer layer, the luminescent layer formed on the first conducting nitride semiconductor layer, and the second conducting nitride semiconductor layer formed on the luminescent layer. The manufacturing method of the ternary nitride buffer layer is: at first preset temperature the first gas reaction source containing first group III element whose melting point is under the first preset temperature is put through; the group III element is deposited on the base board; at the second preset temperature the second gas reaction source containing group III element and the third gas reaction source containing nitride element are put through to make reaction with first group III element formed on the base board; the second preset temperature is not less than the melting point of first group III element.

A method for manufacturing a bonded wafer with ultra-thin single crystal ferroelectric film is provided, comprising the following steps: providing a single crystal ferroelectric wafer and a carrier wafer while activating the surfaces of the single crystal ferroelectric wafer and the carrier wafer; bonding the activated surface of the single crystal ferroelectric wafer to the activated surface of the carrier wafer; and thinning the single crystal ferroelectric wafer for forming an ultra-thin single crystal ferroelectric film. Wherein, the thinning process in the aforesaid preferred embodiment is the method of polishing, grinding, chemical mechanical polishing, or etching. And the bonding force generated in the bonding process is strong enough to resist the shearing force.

The invention provides a chip packaging method and a packaging structure. The chip packaging method comprises the steps of forming a cavity in a base body; and then installing a chip in the cavity, wherein the base body encapsulates the installed chip to serve as a protective shell of the installed chip. Therefore, a traditional plastic packaging process is not needed to be adopted to form a plastic package body for protecting the chip, and the technical complexity of the chip packaging structure is simplified efficiently. In addition, the base body also serves as a carrier of the installed chip, so that the chip is not needed to be installed at a pre-formed lead frame; and a bonding wire is not required to be adopted and convex points are not needed to be formed on the chip in the process of leading out a chip electrode, so that the technical difficulty is not only further simplified, but also the thickness of the chip packaging structure can be reduced efficiently.