30results about How to "Relief Concentration" patented technology

A manufacturing method for an SiC-based MOS device gate dielectric thin film comprises the steps that an SiC substrate is cleaned; an AlN thin film is deposited on the cleaned SiC substrate; the AlN thin film is oxidized into an AlxOyNz thin film, through oxidization technology control, the AlN thin film is oxidized into the AlxOyNz thin film completely or partially, and an AlN / AlxOyNz gate dielectric layer is formed; an Al2O3 thin film is deposited onto the AlxOyNz thin film to form an AlxOyNz / Al2O3 stacked gate dielectric layer and an AlN / AlxOyNz / Al2O3 stacked gate dielectric layer; argon annealing is conducted on the three obtained stacked gate dielectric layers; metal electrodes are sputtered or evaporated on the three annealed stacked gate dielectric layers to form an MOS device structure and manufacturing is completed. The gate dielectric thin film manufactured through the method has the advantages of being high in dielectric constant, low in interface state density, high in carrier migration rate and the like.

The invention discloses a compound sintering method for powdery iron-containing waste mini-pellets, which aims to reduce the environmental pollution of raising dust of powdery iron-containing waste materials and avoid the influence on the sintering quality. The method comprises the steps of: arranging two rows of atomizers in a drum mixer; mixing synthetical powder uniformly through the drum mixer, and performing intensified granulation on the synthetical powder to obtain pellets with the diameters of between 3 and 8mm under the action of a rotary force of the drum mixer; mixing the synthetical powder pellets and coke powder in percentage by weight: 96.5 percent of the synthetical powder pellets and 3.5 percent of the coke powder; distributing the mixture on a belt-type sintering machine after the mixing, adopting a double-sloping girdle ignition furnace, using coke oven gas for ignition at the temperature of 1,050 DEG C, using an exhaust fan at a rate of 4,500m3 / min for air draft, and consolidating to form mini-pellet ore with the diameter of between 3 and 8mm under the condition of the suction negative pressure of 8,500Pa and the sintering temperature of 1,200 DEG C; and adding the mini-pellet ore taken as an iron material into a sintering mixture for secondary sintering consolidation to obtain compound sintered ore.

A light-emitting diode element comprising: an n-type conductive layer (2) which comprises a first region (2a), a second region (2b) and a back surface (2c); an active layer (3) and a p-type conductive layer (4) both of which are arranged on the first region (2a) of the n-type conductive layer (2); a p-type electrode (5) which is arranged on the main surface of the p-type conductive layer (4); an insulating film (15) which is arranged on the inner wall of a through-hole (8) that penetrates through the n-type conductive layer (2) and has an opening on the second region (2b) and the back surface (2c) of the n-type conductive layer (2); a conductive part (9) which is arranged on the surface of the insulating film (15) in the inside of the through-hole (8); an n-type surface electrode (6) which is arranged in the second region (2b) and is in contact with the conductive part (9); and an n-type back-side electrode (7) which is arranged on the back surface (2c) of the n-type conductive layer (2) and is in contact with the conductive part (9).

The invention provides an anaerobic digestion treatment system and method of kitchen waste. The system comprises a first biological reactor in a start-up period, a second biological reactor in an active period, a third biological reactor in a decomposed period, a first digested effluent tank, a second digested effluent tank, a third digested effluent tank, a first pump, a second pump and a third pump, wherein a digested effluent outlet at the bottom of the first biological reactor is connected with a digested effluent inlet / outlet at the upper end of the first digested effluent tank; a digested effluent outlet at the bottom of the second biological reactor is connected with a digested effluent inlet / outlet at the upper end of the second digested effluent tank; digested effluent in the second digested effluent tank is conveyed to the second biological reactor through the second pump; a digested effluent outlet at the bottom of the third biological reactor is connected with a digested effluent inlet / outlet at the upper end of the third digested effluent tank; and digested effluent in the third digested effluent tank flows back to the first biological reactor through the third pump. By implementing the system and method, the technical problems of long cycle, low gas production rate, high salt content and inhibition of VFA (Volatile Fatty Acid) accumulation and ammonia nitrogen accumulation on gas production rate in the conventional kitchen waste anaerobic digestion process can be solved.

The invention discloses an atmosphere purification method and purification apparatus. The purification apparatus comprises a negative pressure generation device used for generating negative pressure in a purification channel, a whirlwind transforming device used for transforming atmosphere which is introduced into the purification channel because of the negative pressure into an artificial whirlwind, and a wind driven generator used for transforming a part of the wind power of the artificial whirlwind into electric power before and / or after the artificial whirlwind enters a purification unit through the purification channel. Through the atmosphere purification method and the purification apparatus, the outer atmosphere is transformed into the artificial whirlwind and the artificial whirlwind enters the purification unit for removal of haze particles in the atmosphere and purification of the atmosphere; the negative pressure generation device can generate the negative pressure in the purification channel, and can continuously introduce the outer atmosphere into the purification channel; and redundant wind power of the artificial whirlwind is transformed into electric power. According to the cycle, atmosphere pollution in an open system is purified while electricity is generated; green renewable energy sources are generated; and running costs of the purification device are reduced.

The embodiment of the invention discloses a data processing method, device and equipment, and belongs to the field of cloud technology-artificial intelligence service. The method comprises the following steps: ; obtaining sample data sets, wherein the sample data set comprises sample interestingness of at least two sample objects and distinguishing parameters for distinguishing the at least two sample objects; adopting a recommendation model to extract prediction attribute feature vectors of at least two sample objects, predicting and identifying according to the prediction attribute feature vector to obtain prediction interestingness of at least two sample objects; adjusting the recommendation model according to the prediction attribute feature vectors, the distinguishing parameters, theprediction interestingness and the sample interestingness; and taking the adjusted recommendation model as a target recommendation model, wherein the distinguishing degree between the updated prediction attribute feature vectors output by the target recommendation model for the at least two sample objects is matched with the distinguishing degree corresponding to the distinguishing parameter. Through the embodiment of the invention, the distinction degree of the recommendation model to the object can be improved, and accurate recommendation can be realized.

The invention relates to a device for eliminating flammable gas in a closed environment. The device comprises a heat production component, a diversion shield and two fixing plates, wherein the heat production component comprises a rectangular box body and catalyzing boxes; the upper side and the lower side of the rectangular box body have an opened structure; air enters the rectangular box body through an opening in a lower bottom surface from bottom to top; bearing structures for placing the catalyzing boxes are distributed inside the rectangular box body; catalyzing balls are arranged in the catalyzing boxes; the diversion shield has an overall shield structure consisting of a diameter-changed body and a diversion body; one bottom edge of the diameter-changed body on the diversion shield is hinged with one side at the upper end of the rectangular box body, so that the whole device can be opened and closed, and the catalyzing boxes can be assembled and replaced; the side faces of the rectangular box body in both side directions of an air outlet of the diversion shield is provided with one fixing plate respectively; and the device is integrally arranged on a vertical wall surface or a fixed object through the fixing plates. The device can reliably and effectively eliminate the flammable gas in the closed space environment.

In an electric discharge device (40) performing streamer discharge from the top of a discharge electrode (41) toward an opposing electrode (42), the discharge electrode (41) with a liner or bar-like shape is placed substantially parallel to the opposing electrode (42). The structure results that the shape of the top of the discharge electrode (41) does not change even if the top wears and the distance between the discharge electrode (41) and the opposing electrode (42) also does not change. This prevents stability of streamer discharge from lowering even if the top of the discharge electrode (41) wears.

The invention discloses a membrane distillation device with an effect of capacitive deionization based polarization alleviation. The membrane distillation device comprises a water inlet tank, a membrane distillation system and a water outlet tank. The membrane distillation system comprises a membrane distillation pipe, a hot-side thermostatic bath and a cold-side thermostatic bath. A capacitive deionization system and a hydrophobic membrane are parallelly and vertically arranged in the membrane distillation pipe. The capacitive deionization system comprises a first activated carbon electrode,a second insulating partition plate, a second activated carbon electrode and a first insulating partition plate in vertical parallel arrangement. The activated carbon electrodes are connected with positive and negative electrodes of a power source respectively. The insulating partition plates are in hollow net structures, and hollow cavities of the insulating partition plates are provided with hotliquid passages. A cold liquid passage is formed between the hydrophobic membrane and the adjacent membrane distillation pipe, and liquid in the hot liquid circulating passage and liquid in the coldliquid circulating passage flow oppositely. By the membrane distillation device with the effect of capacitive deionization based polarization alleviation, polarization in a membrane distillation process can be effectively solved, and the problems of flux reduction and water treatment capacity reduction due to membrane performance decline can be improved.

The invention provides an IGBT device and a manufacturing method thereof. The IGBT device comprises a substrate, an oxygen ion defect layer, a collector region and a hydrogen ion doped region; the substrate comprises a first main surface and a second main surface which are opposite to each other, a front surface structure of the IGBT device is formed on the first main surface, and the IGBT device comprises an active region, a transition region and a terminal region; the oxygen ion defect layer is formed in the second main surface of the transition region and the terminal region; the collector region is formed on the second main surface of the substrate; the hydrogen ion doped region is formed in the second main surface of the substrate, the oxygen ion defect layer is located in the hydrogen ion doped region, and oxygen ions of the oxygen ion defect layer serve as adsorbents of the hydrogen ions, so that the doping concentration of the hydrogen ions in the hydrogen ion doped region is increased. When the IGBT device is switched on, the emission efficiency of the transition region and the terminal region is reduced, and when the IGBT device is switched off, the electron and hole recombination speed of the transition region and the terminal region is improved, so that the problem of current concentration in the transition region is effectively relieved, and the reliability of an IGBT chip is improved.

A high frequency pulse method for vacuum membrane distillation regeneration belongs to the technical field of vacuum membrane distillation. 220V alternating current with frequency of 50Hz is accessed into power, and is converted by a step-up transformer to output high frequency pulse signal with voltage of 1KV-10KV and frequency of 1.31KHz-8KHz; the high frequency pulse signal is inserted into a solution inlet of a membrane component, and the solution outlet of the membrane component is connected with the high frequency pulse at the inlet through a wire; the high frequency pulse makes the pressure in the device solution changes sharply, gas in the solution and the solution due to pressure change produce a large number of bubbles, and bubbles frequently outbreak and collapse in a very short time to generate strong shock wave, so that the local temperature and pressure in the solution increase rapidly, and the local change of temperature and pressure in the solution lead to intensified vibration of the solution; and through the control of pulse frequency and duty ratio (ratio of pulse output time to pulse cycle), the high frequency pulse is formed for membrane distillation desulfurization.

The invention discloses an air purification method and a purification device thereof. The purification device includes a negative pressure generating device that generates negative pressure in the purification passage; the cyclone conversion device that converts the atmosphere introduced into the purification passage due to the negative pressure into an artificial cyclone and passes the artificial cyclone into the purification passage through the purification passage. A wind turbine that converts part of the wind energy into electricity before and / or after the unit. Through the air purification method and its purification device, the external atmosphere is converted into an artificial cyclone and enters the purification unit to remove smog particles in the atmosphere to purify the atmosphere. The negative pressure generating device generates negative pressure in the purification channel, which can continuously introduce the external atmosphere into the purification channel. , The excess wind energy of the artificial cyclone is converted into electrical energy, and this cycle can purify the air pollution in the open system and also generate electricity, producing green renewable energy and reducing the operating cost of the purification device.

The invention provides a GaN(gallium nitride)-based Schottky diode and a preparation method thereof. The gallium nitride-based Schottky diode comprises an ohmic contact electrode, a substrate, an n-type gallium nitride layer and a Schottky metal electrode which are sequentially stacked, and further comprises gallium oxide insulating layers which are arranged at the edges of the two end parts of one side, deviating from the substrate, of the n-type gallium nitride layer and are at least partially covered by the Schottky metal electrode. The GaN-based Schottky diode device provided by the invention is simple in structure; and the gallium oxide has a good insulation isolation effect, so that the problem of barrier edge electric field concentration is effectively relieved, the capability of preventing breakdown and electric leakage is obviously improved, the actual breakdown voltage of the device is obviously improved, the problem of device breakdown caused by over-high local electric field is avoided, and the breakdown performance of the device is enhanced.

The invention discloses a method for mechanically transplanting rice based on pot seedling machine planting. The method comprises the following steps: preparing, dividing to form ridges, applying basefertilizer, performing rotary tillage, and levelling for planting; raising rice seedlings; performing border row positioning according to the design of a test site, guiding a rice transplanter by a stay wire for row transplanting, transplanting into straight lines, mechanically transplanting pot seedlings having the density of 33*12cm, and immediately carrying out artificial planting if plantingor cell missing in transplanting; and performing field management. The method can solve the problem that 1, seasonal crop rotation conflict can be solved, and early planting in the optimum period canbe realized; 2, the seedling age can be relatively prolonged for 10-15 days to relieve the problem of intensive mechanical transplanting period; 3, robust seedlings with shoots can be cultivated and have large seedling body and more hair roots, cannot be injured after transplanting, the recover period can be shortened for 3-5 days; and 4, field has early tiller occurrence, high earbearing tiller rate and large spike after transplanting, and high quality and high yield can be realized.

The invention provides an IGBT device and a manufacturing method thereof. The IGBT device includes: a substrate, the substrate includes opposite first main surfaces and second main surfaces, the first main surface is formed with a front structure of the IGBT device, and the IGBT device includes The active region, the transition region and the terminal region; the oxygen ion defect layer, formed in the second main surface of the transition region and the terminal region; the collector region, formed on the second main surface of the substrate; the hydrogen ion doped region, formed In the second main surface of the substrate, the oxygen ion defect layer is located in the hydrogen ion doped region, wherein the oxygen ions in the oxygen ion defect layer serve as adsorbents for hydrogen ions so as to increase the doping of hydrogen ions in the hydrogen ion doped region. impurity concentration. The present invention reduces the emission efficiency of the transition region and the terminal region when the IGBT device is turned on, and at the same time increases the recombination speed of electrons and holes in the transition region and the terminal region when the IGBT device is turned off, thereby effectively alleviating the current concentration problem existing in the transition region , Improve the reliability of the IGBT chip.

The invention provides an information management method and device and a blockchain service system, and relates to the technical field of data processing. The method is applied to a blockchain service system, the blockchain service system is used for managing a blockchain, the blockchain service system comprises a plurality of application servers, the blockchain comprises a plurality of nodes, and each application server is associated with at least one node. The method comprises the following steps: if a data operation instruction sent by a user is received, determining a target node from nodes contained in a blockchain according to the data operation instruction; judging whether the target node is associated with a target application server or not; determining the cooperative operation authority of the target application server relative to the target node according to the association judgment result, and operating the information data of the target node based on the cooperative operation authority, wherein the cooperation operation authority comprises the management authority and / or the access authority, multi-party cooperation on the block chain can be well achieved, and the problem that block chain management is too concentrated is solved.

Disclosed is a discharge device (40) for generating a streamer discharge from the tip of a discharge electrode (41) towards a counter electrode (42). The discharge electrode (41) in the shape of a wire or rod is disposed substantially parallel to the counter electrode (42), whereby, even when the tip of the discharge electrode (41) becomes worn out, the shape of the tip of the discharge electrode (41) remains unchanged and the distance between the discharge electrode (41) and the counter electrode (42) remains unchanged. As a result, even when the tip of the discharge electrode (41) becomes worn out, the streamer discharge stability will not fall.

The invention relates to a SiC-based MIS device and a preparation method thereof. The method comprises the following steps: preparing a gallium oxide nanosheet on a sapphire substrate; growing an n-type lightly-doped SiC gate dielectric layer on the n-type heavily-doped SiC layer; preparing a bottom gate electrode on one side, far away from the n-type lightly-doped SiC gate dielectric layer, of the n-type heavily-doped SiC layer; transferring the gallium oxide nanosheet on the sapphire substrate to the n-type lightly doped SiC gate dielectric layer; respectively preparing a source electrode and a drain electrode at two ends of the gallium oxide nanosheet; and carrying out annealing treatment on the source electrode, the drain electrode, the gallium oxide nanosheet, the n-type lightly-doped SiC gate dielectric layer, the n-type heavily-doped SiC layer and the bottom gate electrode to obtain the SiC-based MIS device. The SiC-based MIS device prepared by the method has good grid control capability, heat dissipation performance is improved, voltage endurance capability is enhanced, the preparation method is low in cost, and the prepared device is excellent in performance, environment-friendly and capable of being produced repeatedly.

The invention provides an anaerobic digestion treatment system and method of kitchen waste. The system comprises a first biological reactor in a start-up period, a second biological reactor in an active period, a third biological reactor in a decomposed period, a first digested effluent tank, a second digested effluent tank, a third digested effluent tank, a first pump, a second pump and a third pump, wherein a digested effluent outlet at the bottom of the first biological reactor is connected with a digested effluent inlet / outlet at the upper end of the first digested effluent tank; a digested effluent outlet at the bottom of the second biological reactor is connected with a digested effluent inlet / outlet at the upper end of the second digested effluent tank; digested effluent in the second digested effluent tank is conveyed to the second biological reactor through the second pump; a digested effluent outlet at the bottom of the third biological reactor is connected with a digested effluent inlet / outlet at the upper end of the third digested effluent tank; and digested effluent in the third digested effluent tank flows back to the first biological reactor through the third pump. By implementing the system and method, the technical problems of long cycle, low gas production rate, high salt content and inhibition of VFA (Volatile Fatty Acid) accumulation and ammonia nitrogen accumulation on gas production rate in the conventional kitchen waste anaerobic digestion process can be solved.

The invention relates to a gate dielectric thin film transistor for a SiC-based field effect transistor and a preparation method of the gate dielectric thin film transistor. The preparation method comprises the following steps: providing a cleaned SiC substrate; a CaF2 thin film is deposited on the cleaned SiC substrate, and a CaF2 / SiC substrate is formed; evaporating a metal film on one side of the silicon carbide on the CaF2 / SiC substrate to serve as a gate electrode; the two-dimensional material is transferred to the CaF2 / SiC substrate; evaporating metal on the two-dimensional material to respectively obtain a source electrode and a drain electrode; and annealing by using inert gas to complete the preparation of the transistor. The transistor structurally comprises a gate electrode / SiC / CaF2 / two-dimensional material / source and drain electrodes from bottom to top. The gate dielectric film CaF2 prepared by the invention has the advantages of high air stability, no surface dangling bond, high dielectric constant, large forbidden bandwidth, low interface state density and the like.

The invention relates to the technical field of storage equipment, in particular to a fresh food storage system. Ice slurry is adopted as a refrigeration medium of the storage system. The applicationscenario of the storage system is a community. The storage system is used for storing food. The ice slurry is adopted as the refrigeration medium, so that the fresh food storage system has the following advantage that the system is mainly applied to the community. But due to the fact that the environment of the community is complex, such as city management, firefighting management, the relation between owners and tenements, land occupancy rights and municipal power supply obtaining. The complex environments may cause much inconvenience to the food storage system put into a refrigeration compressor of the community, and even the food storage system cannot be put into use. Mainly civil various daily necessaries are put into the food storage system; and when the system encounters many puttingobstacles, the system exists in this community and does not exist in another community, the advantage of network coverage cannot be achieved, and various problems of commercial operation and the likecan be caused.

The invention provides a Cu@Sn core-shell structure high-temperature solder and its preparation method. The core-shell structure metal powder has only two elements, Sn and Cu, and has a core-shell structure of Sn-coated Cu particles. The particle size is Between 1 μm and 20 μm. The metal powder is mixed with commercially available flux to obtain solder, which can be used for welding various substrates. During the reflow process, the Sn in the outer layer of the particles can react with the Cu in the inner core to form Cu6Sn5, thereby forming a dispersed distribution in the intermetallic compound. The weld structure of copper particles can be formed above the melting point of Sn, and can serve below the melting point of Cu6Sn5 after formation, so as to achieve the purpose of low temperature connection and high temperature service. The invention has the advantages of simple process, low cost and strong practicability, and solves the problems of high pasting cost, high process temperature and long process time of power device chips at present.

The invention discloses a SiC MOSFET device with a high-reliability epitaxial gate, and also provides a manufacturing method of the SiC MOSFET device with the high-reliability epitaxial gate. Due to afact that an insulating dielectric gate is obtained through intrinsic SiC of epitaxial high resistivity, a matching degree with substrate epitaxial SiC lattice constant is high, interface state density between a SiCMOSFET device dielectric layer and silicon carbide can be reduced, scattering of carrier transport is decreased, and carrier mobility is improved. A dielectric constant of SiC is higher than that of SiO2, a situation that an electric field is excessively concentrated on a gate dielectric layer can be relieved, and simultaneously, a critical electric field of SiC is far higher thanthat of SiO2, and a breakdown resistance capability and stability of the SiC MOSFET device can be improved.

A manufacturing method for an SiC-based MOS device gate dielectric thin film comprises the steps that an SiC substrate is cleaned; an AlN thin film is deposited on the cleaned SiC substrate; the AlN thin film is oxidized into an AlxOyNz thin film, through oxidization technology control, the AlN thin film is oxidized into the AlxOyNz thin film completely or partially, and an AlN / AlxOyNz gate dielectric layer is formed; an Al2O3 thin film is deposited onto the AlxOyNz thin film to form an AlxOyNz / Al2O3 stacked gate dielectric layer and an AlN / AlxOyNz / Al2O3 stacked gate dielectric layer; argon annealing is conducted on the three obtained stacked gate dielectric layers; metal electrodes are sputtered or evaporated on the three annealed stacked gate dielectric layers to form an MOS device structure and manufacturing is completed. The gate dielectric thin film manufactured through the method has the advantages of being high in dielectric constant, low in interface state density, high in carrier migration rate and the like.

The invention relates to a device for eliminating flammable gas in a closed environment. The device comprises a heat production component, a diversion shield and two fixing plates, wherein the heat production component comprises a rectangular box body and catalyzing boxes; the upper side and the lower side of the rectangular box body have an opened structure; air enters the rectangular box body through an opening in a lower bottom surface from bottom to top; bearing structures for placing the catalyzing boxes are distributed inside the rectangular box body; catalyzing balls are arranged in the catalyzing boxes; the diversion shield has an overall shield structure consisting of a diameter-changed body and a diversion body; one bottom edge of the diameter-changed body on the diversion shield is hinged with one side at the upper end of the rectangular box body, so that the whole device can be opened and closed, and the catalyzing boxes can be assembled and replaced; the side faces of the rectangular box body in both side directions of an air outlet of the diversion shield is provided with one fixing plate respectively; and the device is integrally arranged on a vertical wall surface or a fixed object through the fixing plates. The device can reliably and effectively eliminate the flammable gas in the closed space environment.

The invention discloses a device for movably eliminating VOCs gas in a printing workshop. The device comprises an adsorption cleaning device (5) arranged on a trolley, a suction guard (1) and an air duct (11); the adsorption cleaning device (5) is longitudinally installed on a chassis of a frame (13), the front end of the adsorption cleaning device (5) is communicated with the suction guard (1) through a flexible air flue (3), the flexible air flue (3) is arranged on a suction guard support arm (12), the suction guard support arm (12) is connected an inside frame of the suction guard through a first movable joint (4) and a second movable joint (14) in order, so that the suction guard (1) is capable of freely rotating under the support of the suction guard support arm power and a transmission case (6). The device can be used for flexibly and freely eliminating harmful waste gas at high-concentration VOCs gas production equipment in the printing workshop, the concentration of the VOCs gas directly discharged into the air flue or the atmosphere is reduced, so that the whole VOCs gas concentration in the workshop can be effectively reduced, and the good energy-saving and emission-reduction effect can be realized.

The invention provides an IGBT device and a manufacturing method thereof, and the IGBT device comprises a substrate which comprises a first main surface and a second main surface which are opposite to each other, wherein a front surface structure of the IGBT device is formed on the first main surface; a first helium ion defect layer and a second helium ion defect layer, wherein the first helium ion defect layer is formed in the second main surface of the active region, the second helium ion defect layer is formed in the second main surfaces of the transition region and the terminal region, and the defect density of the first helium ion defect layer is smaller than that of the second helium ion defect layer; a collector region formed on the second main surface of the substrate; and a buffer region formed in the second main surface of the substrate. The service life of carriers in the defect layers on the back faces of the transition area and the terminal area is controlled to be shorter than that of carriers in the defect layer on the back face of the active area, and the problem of current concentration in the transition area when the IGBT is turned off is solved while low on-state voltage drop and low turn-off loss are guaranteed.

The invention relates to the technical field of garbage treatment equipment, and discloses a deodorization type environment-friendly garbage room system which comprises a box body. A mesh partition plate is fixed in the box body, and the mesh partition plate divides the box body into a garbage containing box and a liquid collecting box located below the garbage containing box. The liquid collecting box is arranged to be a negative pressure liquid collecting box and is used for sucking and containing accumulated liquid of garbage in the garbage containing box; and the negative pressure liquid collecting box is connected with a liquid outlet for discharging accumulated liquid. According to the technical scheme, the landfill leachate is leaked into the negative-pressure liquid collecting box as soon as possible through the mesh partition plate and is discharged outwards in time, and the situation that the landfill leachate exists in the box body for a long time and is fermented to produce more irritant gas, and the environmental sanitation is affected is avoided. In addition, in the deodorization type environment-friendly garbage room system, by forcibly ventilating the garbage and sucking fresh air, the interior of the box body can be kept dry, the rotting speed of the garbage can be relieved, stimulating gas can be diffused as soon as possible, and the situation that the living environment is affected due to the fact that the stimulating gas is left around the box body is reduced.

The invention discloses a gas distributor, relates to the field of a sulfur dioxide absorption tower and in particular relates to a gas distribution device inside an absorption tower. The gas distributor comprises a round support frame which is fixedly connected to the inner wall of the sulfur dioxide absorption tower, wherein a plurality of main shafts are fixedly connected inside the round support frame; the multiple main shafts are arranged in parallel and each main shaft is connected to a spiral blade; and the spiral blades provided with the main shafts are arranged in a mode of right-handed rotation in the direction parallel to a flue gas inlet direction and are distributed in a staggered manner by equal spacing. Since pore channels are distributed obliquely towards the flue gas inlet direction, locally concentrated gas is dispersed towards a dead area under the inclined guiding effect of the distributor, so that the gas inside the absorption tower is effectively rectified and the circumstance of local flue gas concentration or dead area is significantly relieved; in addition, the uniform distribution of the gas is further enhanced by virtue of the sufficient distributed pore channels, so that the desulfurization efficiency is improved to a great extent. Meanwhile, the spiral distributor can enhance flue gas disturbance degree, prolong a contact time between the flue gas and slurry and increase the utilization rate of the slurry.

The embodiments of the present application disclose a data processing method, device and device, which belong to the field of cloud technology-artificial intelligence services. The method includes: acquiring a sample data set, where the sample data set includes sample interest degrees of at least two sample objects and a distinguishing parameter used to distinguish the at least two sample objects, and extracting the predicted attribute feature vectors of the at least two sample objects by using a recommendation model, According to the prediction and recognition of the predicted attribute feature vector, the predicted interest degree of at least two sample objects is obtained, and the recommendation model is adjusted according to the predicted attribute feature vector, the distinguishing parameter, the predicted interest degree and the sample interest degree, and the adjusted recommendation model is used as the target recommendation model. , the degree of discrimination between the updated prediction attribute feature vectors output by the target recommendation model for at least two sample objects matches the degree of discrimination corresponding to the discrimination parameter. Through the example of the present application, the degree of discrimination of objects by the recommendation model can be improved, and accurate recommendation can be realized.