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IGBT device and manufacturing method thereof

A manufacturing method and device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as large current, achieve the effects of reducing emission efficiency, accelerating recombination speed, and reducing hole volume

Active Publication Date: 2021-12-28
GTA SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide an IGBT device and its manufacturing method, which is used to solve the problem of excessive current in the transition region when the IGBT is turned off in the prior art

Method used

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  • IGBT device and manufacturing method thereof
  • IGBT device and manufacturing method thereof
  • IGBT device and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0046] IGBT devices can be divided into three regions, namely active region, transition region and termination region. When the IGBT device is turned on, the back P-type collector begins to inject holes into the drift region of the IGBT device. During the turn-off period of the IGBT device, it is necessary to extract all the electrons and holes injected into the drift region during the conduction period, and the electrons are removed from the IGBT device. The back side of the IGBT device flows out, and the holes flow out from the front side of the IGBT device. The holes in the active area can directly flow out from the openings on the front of the active area, but there is no current channel on the front of the terminal area. The holes in the terminal area mainly flow out from the openings in the transition area, which will lead to current in the transition area. The problem of concentration, the transitional concentration of local current, leads to a local temperature rise, w...

Embodiment 2

[0065] like Figure 5 As shown, this embodiment provides an IGBT device, the IGBT device includes: a substrate 101, the substrate 101 includes a first main surface and a second main surface opposite, and the first main surface is formed with an IGBT device The front structure of the IGBT device includes an active region, a transition region and a terminal region; a first helium ion defect layer 113' and a second helium ion defect layer 113, the first helium ion defect layer 113' is formed in the In the second main surface of the active region, the second helium ion defect layer 113 is formed in the second main surface of the transition region and the terminal region, and the defect density of the first helium ion defect layer 113' is less than The defect density of the second helium ion defect layer 113; the collector region, formed on the second main surface of the substrate; the collector region 112, formed on the second main surface of the substrate 101; the first conductiv...

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Abstract

The invention provides an IGBT device and a manufacturing method thereof, and the IGBT device comprises a substrate which comprises a first main surface and a second main surface which are opposite to each other, wherein a front surface structure of the IGBT device is formed on the first main surface; a first helium ion defect layer and a second helium ion defect layer, wherein the first helium ion defect layer is formed in the second main surface of the active region, the second helium ion defect layer is formed in the second main surfaces of the transition region and the terminal region, and the defect density of the first helium ion defect layer is smaller than that of the second helium ion defect layer; a collector region formed on the second main surface of the substrate; and a buffer region formed in the second main surface of the substrate. The service life of carriers in the defect layers on the back faces of the transition area and the terminal area is controlled to be shorter than that of carriers in the defect layer on the back face of the active area, and the problem of current concentration in the transition area when the IGBT is turned off is solved while low on-state voltage drop and low turn-off loss are guaranteed.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuit design and manufacture, and in particular relates to an IGBT device and a manufacturing method thereof. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOSFET (Insulated Gate Field Effect Transistor), so it has both high MOSFET input impedance. , The drive circuit has the advantages of low power, simple drive, fast switching speed, and low switching loss, and has the advantages of large BJT current density, strong current handling capability, and reduced conduction saturation voltage. Since the late 1980s, IGBTs have been widely used in many fields such as new energy vehicles, industrial frequency conversion, photovoltaics, smart grids and locomotives. With the rapid development of the economy, my country's energy demand has risen sharply. Under ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/331H01L29/739H01L21/265
CPCH01L29/7397H01L29/66348H01L21/2652Y02P70/50
Inventor 曹功勋
Owner GTA SEMICON CO LTD
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