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43results about How to "Reduce RF loss" patented technology

Mobile electronic device having audio connector providing an antenna function

The present invention discloses a mobile electronic device, having a radio receiver (28), an amplifier (24) and an audio connector (20) for connecting to a headphone (2). Said audio connector (2) comprises at least one first contact and at least one second contact, wherein said first contact is connected to ground and to said radio receiver (28), and said second contact is connected to said amplifier (24). The electronic device is characterized by a band-pass filter component (26) interconnected between said first contact and said radio receiver (28) so that only a predefined frequency range can pass to the radio receiver, preventing cross talk interference from transmitters operated in proximity.
Owner:NOKIA CORP

Power distribution and combination machine based on ultra wide band coaxial impedance transformer

ActiveCN104767019AAchieve equal amplitude power divisionSimple structureCoupling devicesPower combinerAudio power amplifier
The invention discloses a power distribution and combination machine based on an ultra wide band coaxial impedance transformer. The power combination machine comprises a one-to-four coaxial impedance transformer, outputs of the one-to-four coaxial impedance transformer are a first output circuit and a second output circuit, the first output circuit and the second output circuit are each connected with a one-to-one coaxial impedance transformer, the one-to-four coaxial impedance transformer is connected with the one-to-one coaxial impedance transformers in series, and power distribution of four circuits is achieved; after the power distribution is carried out on the four circuits, each circuit is connected to a coaxial line coaxial balun with an alpha characteristic impedance, each coaxial balun is connected with a push-pull amplifier, and combination of four stages of push-pull output power is achieved; or after the power distribution is carried out on the four circuits, the circuits are connected to coaxial line coaxial baluns Z1 which are matched with output impedance of the one-to-one coaxial impedance transformers and have the same characteristic impedance; each coaxial balun Z1 is distributed into two circuits of constant amplitude inversion signals by the power distribution; each circuit of each coaxial balun Z1 is distributed into two circuits, and finally combined output is carried out through coaxial baluns Z2 which has the same structure with the coaxial baluns Z1.
Owner:CHINA ELECTRONIS TECH INSTR CO LTD

Heterojunction bipolar transistor structure and manufacturing method thereof

The invention discloses a heterojunction bipolar transistor structure and a manufacturing method thereof. The method comprises the following steps: carrying out etching on a semiconductor device withemitter contact metal to etch off a cap layer around the emitter contact position and retain the cap layer under the emitter contact position and around the semiconductor device; depositing a first protection layer; etching the base contact position to etch off the first protection layer and an emitter layer on the base contact position; depositing base contact metal at the base contact position;depositing a second protection layer; etching the base table position to etch off the second protection layer, the first protection layer, the emitter layer, the base layer and a part of collector layer around the base table position and retain the structure around the semiconductor device. The scheme can avoid generation of arrow shadow, improve product yield rate and reduce parasitic capacitance, thereby reducing radio frequency loss.
Owner:福建省福联集成电路有限公司

Silicon on insulator (SOI) process-based back gate drain/source semi-floating front gate P type metal-oxide-semiconductor field effect transistor (P-MOSFET) radio frequency switch zero loss device

The invention discloses a silicon on insulator (SOI) process-based back gate drain / source semi-floating front gate power-metal-oxide-semiconductor field effect transistor (P-MOSFET) radio frequency switch zero loss device. A drain / source region of a silicon on insulator P-channel metal oxide semiconductor (SOI PMOS) device is transformed, and the junction depth of a source (or drain) region is set to be slightly smaller than the thickness of N-type top silicon, namely an N-type channel region; the back gate drain semi-floating is taken as an example, the junction depth of a source region is deeper, the junction depth of the drain region is set to be slightly smaller than the thickness of P-type top silicon, a parasitic diode is formed, direct current signals applied to a drain electrode are isolated, and by offsetting a body and a back gate, a back gate MOSFET channel is switched-on; according to the structure, impedence under the on state of a front gate MOSFET is adjusted, the radio frequency loss of the front gate MOSFET serving as a switch under the on state is reduced, and even a zero loss radio frequency switch is formed; when the self-heating effect of the device is generated to cause negative impedence of the back gate MOSFET, or when the back gate MOSFET works in an amplification state, a front gate coupling signal can be directly amplified, and energy loss of the front gate under the on state is compensated, so that an ultralow and zero loss radio frequency switch is formed.
Owner:HANGZHOU DIANZI UNIV

Method for suppressing radio frequency loss of silicon-based gallium nitride radio frequency device

The invention discloses a method for suppressing the radio frequency loss of a silicon-based gallium nitride radio frequency device. A layer of n-type monocrystalline silicon is arranged on a high-resistance silicon substrate in an epitaxial mode, so that a composite silicon substrate can be obtained; aluminum nitride and a subsequent gallium nitride film are arranged on the composite silicon substrate in an epitaxial mode; n-type electrons doped in the composite silicon substrate and hole flows brought by the diffusion of aluminum atoms are recombined, so that the silicon substrate is kept ina high-resistance state, and the radio frequency loss of the silicon-based gallium nitride radio frequency device is reduced. With the method adopted, the radio frequency loss of the device is effectively suppressed, the crystal quality of epitaxial layers is not reduced, the stability of the device is not influenced, operation is simple and quick, and cost is controllable.
Owner:PEKING UNIV

Shortwave antenna tuning insertion loss test method and fixture

The invention provides a shortwave antenna tuning insertion loss test fixture comprising a vector network analyzer, a measurement and control computer, a radio frequency conversion switch K1 and tested antenna tuning and an antenna, wherein the measurement and control computer is connected with a vector network, the tested antenna tuning and the radio frequency conversion switch K1 through a serial port or a network port, the K1 communicates the tested antenna tuning 1 on an antenna port 2 at a first position, namely the connects the tested antenna tuning to the tested antenna; the K1 communicates the antenna port 2 with a vector network port at a second position, namely connects the tested antenna to the vector network port; and an output end of the measurement and control computer controls a control switch K1 and the tested antenna tuning.
Owner:PANDA ELECTRONICS GROUP +1

Communication device and terminal

The invention provides a communication device and a terminal, which relate to the technical field of communication devices. The communication device comprises antenna modules, a control circuit and acircuit board, wherein the control circuit comprises a main control chip and control chips; the antenna modules are arranged on the first face of the circuit board, and the main control chip and the control chips are arranged on the second face of the circuit board; the main control chip is electrically connected with the control chips; the antenna modules and the control chips are electrically connected through via holes in the circuit board; and the control chips are used for controlling the antenna modules to transmit and receive signals according to an instruction of the main control chip.Through arranging the control circuit and the antenna modules in the communication device on two faces of the circuit board, the space occupied by the antenna modules and the control circuit is further saved. As the antenna modules and the control circuit are arranged on the circuit board, the paths between the antenna modules and the control circuit are reduced, the space is saved, the difference loss of radio frequency can be further reduced, and the radio frequency performance of the antenna module is improved.
Owner:QUECTEL WIRELESS SOLUTIONS

Back grid drain/source self-floating front grid N-MOSFET radio frequency switch zero-loss device based on SOI technology

The invention discloses a back grid drain / source self-floating front grid N-MOSFET radio frequency switch zero-loss device based on the SOI technology. A drain area or a source area of an SOIPMOS device is transformed, the junction depth of the source area or the drain area is set to be slightly smaller than the thickness of P-type top layer silicon, the back grid drain semi-floatation serves as an example, the junction depth of the source area is large, the junction depth of the drain area is slightly smaller than the thickness of the P-type top layer silicon, a parasitic diode is formed, then isolation of a direct current signal is applied to a drain electrode, and a back grid MOSFET channel enters the conducting state due to biasing of a body grid and the back grid; as the back grid MOSFET operates in the conducting state, the impedance generated when a front grid MOSFET is located in the conducting state is adjusted, the radio frequency loss caused when a front grid N-MOSFET serves as a switch and is applied in the switch-on state is reduced, and even a zero-loss radio frequency switch is formed. When the self-heating effect of the device is generated and negative impedance of the back grid MOSFET is formed, or when the back grid MOSFET operates in an amplification state, coupling signals of the front grid can be directly amplified, energy losses caused when the front grid is in the opening state can be compensated, and the ultralow or zero loss radio frequency switch is formed.
Owner:HANGZHOU DIANZI UNIV

Method for inhibiting radio-frequency loss of silicon-based gallium nitride radio-frequency device

The invention discloses a method for inhibiting the radio-frequency loss of a silicon-based gallium nitride radio-frequency device. Ammonia gas is pre-introduced before an epitaxial layer grows; nitridation pretreatment is performed on a silicon substrate; a layer of amorphous silicon nitride thin film is formed on the silicon substrate, so that a barrier for aluminum atom diffusion is formed; andthe barrier is used for blocking the aluminum atom diffusion, so that the conductivity of the silicon substrate after the epitaxial growth is reduced, the silicon substrate is maintained in a high-resistance state, and the radio-frequency loss of the radio-frequency device in a working process is reduced. According to the method disclosed by the invention, the time for performing the nitridationpretreatment on the silicon substrate by introducing the ammonia gas is second, so that the machine hour of a factory is nearly not occupied and the industrial production control cost is reduced.
Owner:北京中博芯半导体科技有限公司

Composite substrate, composite film and preparation method thereof, and radio frequency surface acoustic wave device

The invention provides a composite substrate, a composite film, a preparation method of the composite film and a radio frequency surface acoustic wave device. The composite substrate sequentially comprises a substrate layer and a polycrystalline layer from bottom to top, wherein the polycrystalline layer comprises a crystal grain gradient layer and a crystal grain uniform layer; crystal grains in the crystal grain gradient layer are of a columnar structure, and the crystal grains of the columnar structure are gradually increased in the direction from the substrate layer to the crystal grain uniform layer. The grain gradient layer grows on the substrate layer, columnar grains in the grain gradient layer are sufficient in density, meanwhile, large stress generated after high-temperature cooling of the grain uniform layer can be dispersed, and interlayer gaps generated by chemical bond breakage due to the fact that the large stress acts on the substrate layer and the grain uniform layer are avoided; the surface, close to the substrate layer, of the crystal grain uniform layer is provided with dense carrier traps, and the effect of limiting carrier movement is enhanced, so that the interface resistivity is improved, the radio frequency loss of the radio frequency surface acoustic wave device is reduced, and the performance of the radio frequency surface acoustic wave device is improved.
Owner:JINAN JINGZHENG ELECTRONICS

Preparation method of Si substrate AlN template and preparation method of Si substrate GaN epitaxial structure

The invention discloses a preparation method of a Si substrate AlN template and a preparation method of a Si substrate GaN epitaxial structure. The preparation method of the Si substrate AlN templatecomprises the following steps: selecting a Si substrate; growing an AlN nucleating layer on the Si substrate; and injecting ions into the Si substrate through the AlN nucleating layer. After the AlN nucleating layer is prepared on the Si substrate, ion implantation on the Si substrate and injecting ions into the AlN nucleating layer are performed through the AlN nucleating layer, so that the typesof the ions injected in the mode can be expanded, the carrier concentration at the Si / AlN interface and the carrier concentration in the AlN nucleating layer can also be reduced, the radio frequencyloss of the Si substrate AlN template is reduced, the characteristics of a GaN microwave device manufactured by using the Si substrate AlN template are improved, and the application requirements of the GaN microwave device in the fields of aerospace, radar, mobile communication and the like are met. In addition, a GaN device epitaxial structure is prepared by using the Si substrate AlN template, and the design of the GaN device epitaxial structure has more degrees of freedom.
Owner:XIDIAN UNIV

Method for preparing GaN-based electronic device

The invention discloses a method for preparing a GaN-based electronic device. The method comprises the steps: carrying out doping treatment on the surface of a high-resistance substrate to make any one or more of vacant sites, gap sites and replacement sites on the surface of the high-resistance substrate be occupied by doping ions and / or doping atoms, so that external Al atoms and / or Ga atoms can be prevented from diffusing into the high-resistance substrate or parasitic conduction is inhibited by using a compensation mechanism; then growing an epitaxial structure containing Al atoms and / or Ga atoms on the surface of the high-resistance substrate; and manufacturing a GaN-based electronic device based on the epitaxial structure. The invention also discloses a GaN-based electronic device prepared by using the method. According to the invention, the manufacturing method of the GaN-based electronic device is simple and effective, the crystal quality of the epitaxial layer can be guaranteed, and the problems of secondary epitaxial interface impurity contamination, low production efficiency and the like are solved, so that the GaN-based radio frequency microwave device epitaxial wafer with low radio frequency loss and high performance can be manufactured.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI

Drain/source region dielectric (pn junction) isolation front gate n-mosfet radio frequency switch ultra-low loss device based on soi process

The invention discloses a drain / source region medium (PN junction) isolation front grid N-MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) radio frequency switch ultralow loss device based on a SOI (Silicon on Insulator) process. A SOIN-MOSFET device source (drain) region is remoulded, a PN junction or a dielectric capacitance is formed on the source (drain) region, the junction depth of the source region is deeper, a P-type doping or medium is manufactured in the middle of the drain region to form the PN junction or the dielectric capacitance, and the isolation of direct current bias applied to the drain region is formed; through the arrangement of body grid and back grid bias, a back grid MOSFET channel is on, and a drain region alternating current signal of a front grid N-MOSFET is coupled to a back grid MOSFET; as the back grid MOSFET works in an on state, the structure adjusts the impedance under the on state of the front grid MOSFET, the radio frequency loss when the front grid N-MOSFET is used for switch on-state application is reduced, and the loss of the radio frequency switch is ultralow; when a self-heating effect of the device is produced and causes the back grid MOSFET to form negative impedance, or when the back grid MOSFET works in an amplification state, a front grid coupling signal can be directly amplified, the energy loss under the front grid on-state is compensated, and the loss is further reduced.
Owner:HANGZHOU DIANZI UNIV

Antenna and mobile terminal

The invention relates to an antenna and a mobile terminal. The antenna comprises a feed end, a first radiator, a second radiator and a gap located between the first radiator and the second radiator. The feed end is electrically connected with the first radiator or the second radiator and provides a feed signal for the first radiator or the second radiator; the first radiator and / or the second radiator are / is part of a metal frame of the mobile terminal. According to the antenna, the space of the mobile terminal can be effectively saved, and the isolation between the antenna and other structures of the mobile terminal is improved.
Owner:CHONGQING TRANSSION COMM TECH LTD

Satellite communication ground station interference cancellation space sampling antenna design method

The invention provides a satellite communication ground station interference cancellation space sampling antenna design method. The method comprises the steps of: drawing up an interference suppression requirement on the basis of a Friis transmission formula; designing a space sampling antenna / array; drawing up design indexes of space sampling antenna units on the basis of a sampling antenna coverage theory, an interference suppression requirement and a self-adaptive sidelobe suppression algorithm; adopting a polarization switching and adjusting mode to achieve sampling coverage horizontal and vertical linear polarization with a small number of channels; and evaluating the space sampling antenna / array, specifically, adopting a space sampling algorithm, importing interference source characteristics, interference coupling characteristics, an interfered mechanism and a directional diagram of the space sampling antenna / array, taking the ratio of signal to interference plus noise ratios before and after cancellation as an interference suppression ratio, and verifying whether the performance of the space sampling antenna meets the interference suppression requirement or not. The invention provides the general method for designing the satellite communication ground station interference cancellation space sampling antenna, and the method can be widely applied to the design of various other interference cancellation space sampling antennas.
Owner:NAVAL UNIV OF ENG PLA

Si-based AlGaN/GaN HEMT based on wrapping buried layer and diffusion barrier layer and preparation method

The invention relates to a Si-based AlGaN / GaN HEMT based on a wrapping buried layer and a diffusion barrier layer and a preparation method. The Si-based AlGaN / GaN HEMT comprises a Si substrate, the diffusion barrier layer, an AlN nucleating layer, an AlGaN order change layer, a GaN buffer layer and an AlGaN barrier layer which are stacked in sequence, an N-type buried layer and an isolation layer are arranged in the Si substrate, and the isolation layer is arranged between the Si substrate and the N-type buried layer and wraps the N-type buried layer. According to the AlGaN / GaN HEMT, an N-type buried layer and an isolation layer are arranged in a Si substrate, the isolation layer cannot completely mask N-type impurities in the N-type buried layer, and the N-type impurities can be diffused into the Si substrate so that the concentration of a P-type channel introduced into the Si substrate by diffusion of Al in an upper layer structure is counteracted, the resistivity of the substrate is improved, and the radio frequency loss of a device is reduced; and meanwhile, the diffusion barrier layer is arranged between the Si substrate and the AlN nucleating layer, and the diffusion barrier layer can achieve the effect of blocking diffusion of Al atoms so that P-type conductive doping in the substrate is reduced, the resistivity of the substrate is improved, and then the radio frequency loss of the substrate is reduced.
Owner:XIDIAN UNIV

A Power Distribution and Combiner Based on UWB Coaxial Impedance Transformer

ActiveCN104767019BAchieve equal amplitude power divisionSimple structureCoupling devicesUltra-widebandPower combiner
The invention discloses a power distribution and combination machine based on an ultra wide band coaxial impedance transformer. The power combination machine comprises a one-to-four coaxial impedance transformer, outputs of the one-to-four coaxial impedance transformer are a first output circuit and a second output circuit, the first output circuit and the second output circuit are each connected with a one-to-one coaxial impedance transformer, the one-to-four coaxial impedance transformer is connected with the one-to-one coaxial impedance transformers in series, and power distribution of four circuits is achieved; after the power distribution is carried out on the four circuits, each circuit is connected to a coaxial line coaxial balun with an alpha characteristic impedance, each coaxial balun is connected with a push-pull amplifier, and combination of four stages of push-pull output power is achieved; or after the power distribution is carried out on the four circuits, the circuits are connected to coaxial line coaxial baluns Z1 which are matched with output impedance of the one-to-one coaxial impedance transformers and have the same characteristic impedance; each coaxial balun Z1 is distributed into two circuits of constant amplitude inversion signals by the power distribution; each circuit of each coaxial balun Z1 is distributed into two circuits, and finally combined output is carried out through coaxial baluns Z2 which has the same structure with the coaxial baluns Z1.
Owner:CHINA ELECTRONIS TECH INSTR CO LTD

Hinge structure with signal transmission line

The invention discloses a hinge structure with a signal transmission line. The hinge structure comprises at least two rotating vanes and two parallel rotating vane connecting pieces arranged between the two adjacent rotating vanes, i.e. a first rotating vane, a second rotating vane, a first rotating vane connecting piece and a second rotating vane connecting piece, wherein the first and second rotating vanes are connected through the first and second rotating vane connecting pieces in a rotating manner; each rotating vane connecting piece comprises at least two parallel signal transmission channels; the signal transmission channels in each rotating vane connecting piece are in S-shaped connection; a signal of a first unit connected with the first rotating vane can be transmitted into a second unit connected with the second rotating vane. According to the hinge structure with the signal transmission line, the signal transmission channels are designed as in the S-shaped connection, so that the signal transmission channels are perpendicular to a rotating direction, are namely parallel to the hinge structure, and are not likely to be bent along with bending of the hinge structure, influence on transmission performance of the signal transmission line is eliminated, and long service life is ensured.
Owner:SHANGHAI AMPHENOL AIRWAVE COMM ELECTRONICS CO LTD

An ultra-low loss device of drain-source region dielectric/pn junction isolation front gate p/n-mosfet radio frequency switch based on soi process

The invention discloses a drain-source area medium / PN junction isolated front-gate P / N-MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) radio frequency switch ultralow-loss device based on an SOI (Silicon On Insulator) technology, wherein SOIP(N)-MOSFET device source and drain regions are modified, PN junctions or dielectric capacitors are produced in the source and drain regions, the junctions in source regions are large in depth, N(P) type doping or mediums are implanted in the source regions to form PN junctions or dielectric capacitors so as to form isolation to the voltage of direct current applied by a drain; through the biasing arrangement of the MOS and back-gate, the back-gate MOSFET channel is in a conducting state, altering current signals at the front-gate P(N)-MOSFET drain region are coupled to back-gate MOSFET; since the back-gate works in the conducting state, adjustment to impedance in ON state of the front-gate MOSFET is formed due to the structure, so that the radio frequency loss of the front-gate MOSFET serving as the switch applying to the ON state is reduced; when the back-gate MOSFET device generates negative impedance due to that the device generates self-heating effect, and the back-gate MOSFET works in the amplification state, front-gate coupling signals is directly amplified, energy loss in the ON state of the front-gate is compensated, and thus the ultrlow / zero-loss radio frequency switch is formed.
Owner:HANGZHOU DIANZI UNIV

Low-loss gallium nitride radio frequency material epitaxial structure and preparation method

The invention relates to the technical field of semiconductors, in particular to a low-loss gallium nitride radio frequency material epitaxial structure and a preparation method. A buffer layer, a gallium nitride channel layer, an N-type low-doped gallium nitride layer, a barrier layer and an amide cap layer epitaxially grow on a silicon substrate in sequence to obtain the low-loss gallium nitrideradio frequency material epitaxial structure. According to the invention, the N-type low-doped gallium nitride layer is added below the barrier layer, and the square resistance of the N-type low-doped gallium nitride layer is lower than that of two-dimensional electron gas, so that the N-type low-doped gallium nitride layer has a very weak function of participating in conduction under a normal on-state condition, but in the process from an off state to an on stage, electrons of the N-type low-doped gallium nitride layer can supplement the reduction of the concentration of two-dimensional electron gas; secondly, electrons transferred back to a heterojunction interface from the buffer layer can quickly pass through the N-type low-doped gallium nitride layer, so that the effect of quickly supplementing two-dimensional electron gas of the heterojunction interface is achieved; and therefore, the concentration of the two-dimensional electron gas in the dynamic process can be reduced to themaximum extent by adding the N-type low-doped gallium nitride layer, so that the radio frequency loss is reduced.
Owner:DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV

Composite substrate and preparation method thereof and electronic component

ActiveCN112564662ARestricted movementReduce interface conductivityImpedence networksCharge carrierComposite substrate
The invention provides a composite substrate and a preparation method thereof and an electronic component, and the composite substrate sequentially comprises a substrate layer, a polycrystalline layer, an insulating layer and a thin film layer from the bottom to the top. The polycrystalline layer is provided with a crystal grain cluster composed of two or more crystal grains. According to the scheme, the polycrystalline layer with the grain cluster structure is arranged between the insulating layer and the substrate layer, a large number of defects formed in the grain cluster can capture charged carriers, the carriers are gathered at the grain boundary to form a potential barrier between grains, movement of the carriers between the grains is limited, and therefore, the interface conductionbetween the insulating layer and the semiconductor layer can be reduced, and the radio frequency loss is reduced.
Owner:JINAN JINGZHENG ELECTRONICS

Si-based GaN millimeter wave transmission line structure and preparation method

The invention discloses a Si-based GaN millimeter wave transmission line structure and a preparation method. The Si-based GaN millimeter wave transmission line structure comprises a Si substrate; an AlN nucleating layer, arranged on the Si substrate; a III-nitride transition layer, arranged on the AlN nucleating layer; a GaN buffer layer, arranged on the III-nitride transition layer; a metal ground layer over the GaN buffer layer; a dielectric insertion layer over the metal formation; a CPW over the dielectric insertion layer; and a ground wire of the CPW connected with the metal ground layerthrough the through hole in the medium insertion layer. The objective of the structure is to solve the problem of high radio frequency loss of a transmission line in millimeter wave circuit application. The invention provides a millimeter wave application-oriented transmission line structure on a Si-based GaN structure and a preparation method. A layer of metal ground is inserted between a CPW anda GaN layer to shield the influence of a p-type conducting channel at an AlN / Si interface, so that the radio frequency loss of the transmission line is reduced, and the application requirement of thetransmission line in a millimeter wave circuit is met.
Owner:XIDIAN UNIV

A hinge structure with a signal transmission line

The invention discloses a hinge structure with a signal transmission line. The hinge structure comprises at least two rotating vanes and two parallel rotating vane connecting pieces arranged between the two adjacent rotating vanes, i.e. a first rotating vane, a second rotating vane, a first rotating vane connecting piece and a second rotating vane connecting piece, wherein the first and second rotating vanes are connected through the first and second rotating vane connecting pieces in a rotating manner; each rotating vane connecting piece comprises at least two parallel signal transmission channels; the signal transmission channels in each rotating vane connecting piece are in S-shaped connection; a signal of a first unit connected with the first rotating vane can be transmitted into a second unit connected with the second rotating vane. According to the hinge structure with the signal transmission line, the signal transmission channels are designed as in the S-shaped connection, so that the signal transmission channels are perpendicular to a rotating direction, are namely parallel to the hinge structure, and are not likely to be bent along with bending of the hinge structure, influence on transmission performance of the signal transmission line is eliminated, and long service life is ensured.
Owner:SHANGHAI AMPHENOL AIRWAVE COMM ELECTRONICS CO LTD
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