Method for inhibiting radio-frequency loss of silicon-based gallium nitride radio-frequency device

A technology of radio frequency devices and radio frequency loss, which is applied in the direction of semiconductor devices, semiconductor/solid state device manufacturing, electrical components, etc., can solve the problems of large radio frequency loss of microwave radio frequency devices, increase the conductivity of silicon substrates, etc. Effect of RF loss and diffusion suppression

Inactive Publication Date: 2019-09-06
北京中博芯半导体科技有限公司
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Problems solved by technology

During aluminum nitride epitaxy, aluminum atoms diffuse into the silicon substrate, which increases the conductivity of the originally high-resistance silicon substrate, forming a layer of p-type hole conductive layer, which leads to a relatively poor performance of microwave radio frequency devices in the studio. large radio frequency loss

Method used

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  • Method for inhibiting radio-frequency loss of silicon-based gallium nitride radio-frequency device
  • Method for inhibiting radio-frequency loss of silicon-based gallium nitride radio-frequency device

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Embodiment Construction

[0023] The present invention will be further described below in conjunction with drawings and embodiments.

[0024] The key of the present invention is to pre-treat the high-resistance silicon substrate in advance, and to pre-flow ammonia gas before epitaxial nitride to form a layer of amorphous silicon nitride film on the silicon substrate.

[0025] The present invention provides a solution to the radio frequency loss problem caused by the diffusion of aluminum atoms in GaN-on-Si radio-frequency devices. The structure of GaN-on-Si radio-frequency devices prepared according to the solution is as follows: figure 1 As shown, the preparation process includes the following steps:

[0026] 1) Two pieces of the same high-resistance silicon substrate 1 are selected.

[0027] 2) According to the conditions of the epitaxial growth equipment, select the flow rate and time of pre-passing ammonia gas; pre-treating the silicon substrate with ammonia gas will form a layer of amorphous sili...

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Abstract

The invention discloses a method for inhibiting the radio-frequency loss of a silicon-based gallium nitride radio-frequency device. Ammonia gas is pre-introduced before an epitaxial layer grows; nitridation pretreatment is performed on a silicon substrate; a layer of amorphous silicon nitride thin film is formed on the silicon substrate, so that a barrier for aluminum atom diffusion is formed; andthe barrier is used for blocking the aluminum atom diffusion, so that the conductivity of the silicon substrate after the epitaxial growth is reduced, the silicon substrate is maintained in a high-resistance state, and the radio-frequency loss of the radio-frequency device in a working process is reduced. According to the method disclosed by the invention, the time for performing the nitridationpretreatment on the silicon substrate by introducing the ammonia gas is second, so that the machine hour of a factory is nearly not occupied and the industrial production control cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for suppressing the radio frequency loss problem caused by the diffusion of aluminum atoms faced by silicon-based gallium nitride radio frequency devices in application. Background technique [0002] The third-generation semiconductors represented by group III nitrides have excellent properties such as high band gap, high breakdown electric field, high saturation electron drift velocity, and strong polarization, especially based on silicon (Si) substrates and silicon carbide ( Aluminum gallium nitride / gallium nitride (AlGaN / GaN) heterostructure high mobility transistor (HEMT) on SiC substrate has excellent characteristics such as fast switching speed, low on-resistance, small device size, high temperature resistance, and energy saving. , is expected to be widely used in the field of next-generation microwave radio frequency power devices. [0003] How...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/335
CPCH01L21/02381H01L21/02488H01L29/66462
Inventor 杨学林沈波魏来张洁冯玉霞沈剑飞刘丹烁蔡子东马骋
Owner 北京中博芯半导体科技有限公司
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