Low-loss gallium nitride radio frequency material epitaxial structure and preparation method

Abstract

The invention relates to the technical field of semiconductors, in particular to a low-loss gallium nitride radio frequency material epitaxial structure and a preparation method. A buffer layer, a gallium nitride channel layer, an N-type low-doped gallium nitride layer, a barrier layer and an amide cap layer epitaxially grow on a silicon substrate in sequence to obtain the low-loss gallium nitrideradio frequency material epitaxial structure. According to the invention, the N-type low-doped gallium nitride layer is added below the barrier layer, and the square resistance of the N-type low-doped gallium nitride layer is lower than that of two-dimensional electron gas, so that the N-type low-doped gallium nitride layer has a very weak function of participating in conduction under a normal on-state condition, but in the process from an off state to an on stage, electrons of the N-type low-doped gallium nitride layer can supplement the reduction of the concentration of two-dimensional electron gas; secondly, electrons transferred back to a heterojunction interface from the buffer layer can quickly pass through the N-type low-doped gallium nitride layer, so that the effect of quickly supplementing two-dimensional electron gas of the heterojunction interface is achieved; and therefore, the concentration of the two-dimensional electron gas in the dynamic process can be reduced to themaximum extent by adding the N-type low-doped gallium nitride layer, so that the radio frequency loss is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a low-loss gallium nitride radio-frequency material epitaxial structure and a preparation method. Background technique [0002] The third-generation semiconductors have excellent properties such as high band gap, high breakdown electric field, high saturation electron drift velocity, and strong polarization. Among them, compared with traditional Si materials and other devices, GaN-based devices have higher power density output, higher strong field, and lower on-resistance, so GaN-based devices have higher energy in practical applications. Conversion frequency efficiency and output power, due to its excellent performance, it is widely used in consumer electronics, 5G communications, cloud services, photovoltaic inverters, new energy vehicles, power generation and other fields. [0003] In recent years, the commercialization progress of GaN epitaxial materials and devices o...

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Problems solved by technology

[0004] In order to solve the above problems, the present invention provides a low-loss GaN radio-frequency material epitaxial structure and preparation method, which mainly solves the problem that the on-resistance increases due to the decrease in the concentration of two-dimensional electron gas of GaN radio-frequency materials under high-frequency conditions. phenomenon, ultimately reducing RF loss and achieving high-quality RF dynamic device characteristics

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