173results about How to "Reduce material loss" patented technology

To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

The present invention provides a method for manufacturing a display device having a TFT that can be operated at high speed while using a small number of photomasks and improving the utilization efficiency of materials, where the threshold value is difficult to be varied. In the invention, a catalytic element is applied to an amorphous semiconductor film and the amorphous semiconductor film is heated to form a crystalline semiconductor film. After removing the catalytic element from the crystalline semiconductor film, a top-gate type thin film transistor with a planar structure is manufactured. Moreover, by using the droplet discharging method where an element of a display device is formed selectively, the process can be simplified, and loss of materials can be reduced.

Resist masks exposed to high-dose implantation processes may be efficiently removed on the basis of a combination of a plasma-based etch process and a wet chemical etch recipe, wherein both etch steps may include a highly selective etch chemistry in order to minimize substrate material loss and thus dopant loss in sophisticated semiconductor devices. The first plasma-based etch step may provide under-etched areas of the resist mask, which may then be efficiently removed on the basis of the wet chemical etch process.

A semiconductor device including a contact etch stop layer and contact hole formation method for reduced underlying material loss and improved device performance, the method including providing a semiconductor substrate including an active region including a CMOS device, STI structures, and metal silicide regions; forming a fluorine doped amorphous carbon layer over the active region; forming a PMD layer on the fluorine doped amorphous carbon layer; dry etching contact holes in the PMD layer to expose the fluorine doped amorphous carbon layer; and, removing the fluorine doped amorphous carbon layer according to a dry stripping process.

Fiber-reinforced polymer composites possessing improved damping ability are provided. In one aspect, the fibers provide the composite with a relatively high dynamic modulus over a broad range of frequencies for a given temperature. In another aspect, the polymer may comprise a viscoelastic polymer possessing a relatively high loss factor for a given frequency and temperature. The polymer may be further tailored to control the center frequency at which the maximum loss factor of the polymer is achieved. The composite so formed exhibits a relatively small reduction in loss factor with significant increase in dynamic modulus over a broad range of frequencies for a given temperature. As a result, a structure damped by the composite exhibits a relatively high, constant loss factor as compared to conventional damping materials. Thus, embodiments of the disclosed composites dissipate significantly more energy during each vibration cycle than conventional damping materials.

Oxidation treatment is performed to the surface of a substrate provided with a photocatalytic conductive film and an insulating film; treatment with a silane coupling agent is performed, so that a silane coupling agent film is formed and the surface of the substrate is modified to be liquid-repellent; and the surface of the substrate is irradiated with light of a wavelength (less than to equal to 390 nm) which has energy of greater than or equal to a band gap of a material for forming the photocatalytic conductive film, so that only the silane coupling agent film over the surface of the photocatalytic conductive film is decomposed and the surface of the photocatalytic conductive film can be modified to be lyophilic.

A process for producing turbine rotors and other large rotating components of power-generating gas turbine engines using powder metallurgy techniques. The process involves forming a powder of a gamma prime or gamma double prime precipitation-strengthened nickel-based superalloy whose particles are about 0.100 mm in diameter or smaller. The powder is placed in a can and consolidated to produce an essentially fully dense consolidation, which is then hot worked to produce a billet of a size sufficient to form a forging of at least 2300 kg. The billet is forged at a temperature and strain rate to produce a forging with a uniform fine grain of ASTM 10 or finer. Thereafter, the forging may undergo a heat treatment to achieve a desired balance of mechanical properties while retaining a uniform grain size of ASTM 10 or finer.

The invention discloses a method for recovering valuable elements in waste lithium ion battery electrode materials. The method comprises steps of roasting the waste lithium ion battery electrode materials in an inert gas atmosphere, the roasting temperature is 200 -600 DEG C, the time is 30-360 minutes, and the roasting slag is obtained; mixing the obtained roasting slag and an acidic solution with [H+] concentration of 0.5~8 mol/L according to the mass ratio of 1:3~10; leaching at the leaching temperature of 30-90 DEG C and leaching time of 1-8 hours, leach liquor and leach residues are filtered to be obtained; the leach liquor is used for recovering nickel, cobalt, manganese, aluminum and lithium, and the leach residues are used for preparing negative electrode materials. According to the method for recovering valuable elements in waste lithium ion battery electrode materials, a leaching reducing agent does not need to be additionally added, the battery sorting and recycling costs are reduced, the positive and the negative electrode materials can be recovered at the same time, and the economic benefits of lithium battery recovery can be improved.

The invention is the glue welding method and belongs to the material engineering technology field. It relates to the new jointing method adopting glue joint and welding. The procedure is: coat a layer of glue on the overlap areas of the surfaces of the two layers of the waiting materials, then adopt welding hot resource overlapping to realize fine joint of the adapters. The invention can fulfill the effective integrate of mechanic joint, metallurgy joint and chemical joint, improve the loading capacity, the fatigue intensity, the cut intensity, solve the problem of hard jointing of same or different metals, reduce the material wastage and meet the demand of the practical project. The invention is suitable for the jointing of magnesium alloy, Al alloy, Ti alloy and steel and obtains the joints with fine performance.

Apparatus, which is suitable for being surrounded by molten glass, the apparatus having a shank which has at least one at least partially seamless tube consisting of an oxide dispersion-strengthened PGM material, the shank having at least one thickened portion on which an actuating device is arranged.

By providing a protection layer on a silicon/germanium material of high germanium concentration, a corresponding loss of strained semiconductor material may be significantly reduced or even completely avoided. The protection layer may be formed prior to critical cleaning processes and may be maintained until the formation of metal silicide regions. Hence, high performance gain of P-type transistors may be accomplished without requiring massive overfill during the selective epitaxial growth process.

The invention relates to a processing technology of a static iron core of an electromagnetic valve, which has the advantages of reducing the material spillage and improving the magnetic performance of the static ion core. The technology comprises the following steps of: performing cold drawing, primary annealing treatment, secondary cold drawing on linear ferrite serving as raw material, and carrying out cold heading on the material to form a part blank; performing secondary annealing treatment on the part blank, detecting the magnetic performance of the part and performing surface finishing treatment if the part is qualified. According to the processing technology, cutting processing is replaced with cold drawing and cold heading, annealing treatment is performed after the part is formed, the magnetic perforamnce of the final part is enhanced, and the material utilization rate in the static iron core processing process is improved.

Disclosed are methods and materials useful in the preparation of semiconductor devices. In particular embodiments, disclosed are methods for engineering polycrystalline aluminum nitride substrates that are thermally matched to further materials that can be combined therewith. For example, the polycrystalline aluminum nitride substrates can be engineered to have a coefficient of thermal expansion (CTE) that is closely matched to the CTE of a semiconductor material and/or to a material that can be used as a growth substrate for a semiconductor material. The invention also encompasses devices incorporating such thermally engineered substrates and semiconductor materials grown using such thermally engineered substrates. The thermally engineered substrates are advantageous for overcoming problems caused by damage arising from CTE mismatch between component layers in semiconductor preparation methods and materials.

A process for producing a substrate, which comprises processing an aluminum/graphite composite into plates having a thickness of 0.5-3 mm using a multi-wire saw under the following conditions (1) to (4): (1) the wires have abrasive grains bonded thereto which are one or more substances selected from diamond, C—BN, silicon carbide, and alumina and have an average particle diameter of 10-100 μm; (2) the wires have a diameter of 0.1-0.3 mm; (3) the wires are run at a rate of 100-700 m/min; and (4) the composite is cut at a rate of 0.1-2 mm/min. The aluminum/graphite composite has a surface roughness (Ra) of 0.1-3 μm, a thermal conductivity at 25° C. of 150-300 W/mK, a ratio of the maximum to the minimum value of thermal conductivity in three perpendicular directions of 1-1.3, a coefficient of thermal expansion at 25-150° C. of 4×10⁶ to 7.5×10⁻⁶/K, a ratio of the maximum to the minimum value of coefficient of thermal expansion in three perpendicular directions of 1-1.3, and a three-point bending strength of 50-150 MPa.

A truck body for use with a mining dump truck uses a support structure having primary and secondary supports fixed to panels defining the hauling cavity. The use of primary and secondary supports in combination with thinner plate steel produces a stable, ultra-light truck body that enables a larger load of mined material to be transported in a single haul cycle. The provision of a larger hauled load results in a substantial increase in the efficiency of the mining operation and reduced costs.

The invention discloses a buried pipeline cathode protection method and system, relates to the technical field of buried pipeline protection, and aims at solving the problems that a method for conducting cathode protection on a buried pipeline according to the experience is low in accuracy, and standard operation procedures are lacked. The buried pipeline cathode protection method comprises the steps that the ground potential difference of an initial pipe and the ground potential differences from a first pipe to an nth pipe are obtained; the ground potential difference of a target pipe and a corresponding installation parameter vector are obtained; then, the ground potential difference of the target pipe and the allowed maximum pipe ground potential of the buried pipeline are compared, and when conditions are met, the obtained installation parameter vector corresponding to the ground potential difference of the target pipe is a target result; or otherwise, the number of anodic sacrifice protection devices and the number of forced drainage devices are adjusted till the conditions are met. The buried pipeline cathode protection method is used for optimal arrangement of buried pipeline cathode protection devices.

A system and method for loading material from a converter bed, such as that in a converter of an acid plant, is provided. The system, may include a vacuum source; a dust collector connected to the vacuum source by a first vacuum hose; a cyclone operatively connected to the vacuum source through the dust collector, wherein the cyclone may be connected to the dust collector by a second vacuum hose; a drop-out hopper operatively attached to the cyclone by a valve, such as an air actuated valve, wherein the drop-out hopper includes a first feed hose; and one or more material storage containers operatively associated with the cyclone via a second feed hose. The method of loading material into a converter bed may include providing a system for loading the material in the converter bed; setting up the system; and loading the material into the converter bed.

A production method of the present invention includes steps of: (a) obtaining a first electrode plate precursor 1 by applying an electrode active material onto at least one of surfaces of a long strip-shaped current collector so as to form an active material layer, (b) rolling an electrode plate precursor so that the active material layer has a predetermined thickness, and (c) obtaining plural strips of electrode plates by cutting the rolled electrode plate precursor to a desired width. In the step (a), non-application portions onto which an active material is not applied are formed on both edges of the electrode plate precursor in the width direction. The step (d) of removing the non-application portions is carried out simultaneously with the step (c). Accordingly, it is possible to improve production efficiency and reduce material losses by decreasing quality defects that occur in the step of rolling the electrode plate precursor.

The invention provides an optimized mounting structure for a dome type ceiling. The optimized mounting method comprises the following steps: arranging an arc-shaped veneer, a conversion layer and a connecting mechanism, fixedly mounting the conversion layer onto a ceiling, and mounting the arc-shaped veneer onto the conversion layer, wherein the connecting mechanism comprises a first connector, asecond connector and a third connector, the first connector and the second connector are mounted on the conversion layer, the third connector is mounted on the ceiling, a first mounting part, a secondmounting part and a third mounting part are arranged on the arc-shaped veneer, the first mounting part is rotatably connected onto the first connector, the second mounting part is elastically connected onto the second connector, and the third mounting part is fixedly connected to the third connector. The invention further provides an optimized mounting method for the dome type ceiling. Compared with the prior art, the optimized mounting structure improves mounting efficiency of the dome type ceiling, reduces material loss caused by secondary processing in a later-stage mounting process, reduces working difficulty of a climbing operator to certain extent, and improves project construction safety.