55results about How to "Little change in characteristics" patented technology

The invention relates to a drive and temperature control circuit of a quantum cascade laser, which belongs to the technical field of electrons. The drive and temperature control circuit is used for supplying accurate and adjustable pulse width modulation (PWM) drive voltage to the quantum cascade laser and for precisely controlling the working environment temperature of the quantum cascade laser. The drive and temperature control circuit comprises a single chip microprocessor, an adjustable voltage stabilizing source, a temperature control module, a PWM control module and a load protection module. The drive and temperature control circuit is simple in design and convenient to use; the work status of the laser load can be comprehensively monitored, an over-current protection function is realized, high-voltage breakdown is prevented, the pulse width adjustability is good, the pulse width can be minimized to ns grade, adjustable pulse width and adjustable working frequency can be realized, stable working temperature is achieved, and laser generated by the quantum cascade laser which is sensitive to the ambient temperature can be maintained at constant optical wavelength.

Provided are: a fiber-reinforced composite material which is suppressed in morphology variation due to the molding conditions, while having excellent mode I interlaminar fracture toughness and excellent wet heat resistance; an epoxy resin composition for obtaining the fiber-reinforced composite material; and a prepreg which is obtained using the epoxy resin composition. An epoxy resin composition for fiber-reinforced composite materials, which contains at least the following constituent elements [A]-[F], and which is characterized by containing 5-25 parts by mass of constituent element [C] and 2-15 parts by mass of constituent element [E] per 100 parts by mass of the total epoxy resin blended therein. [A] A bifunctional amine type epoxy resin [B] A tetrafunctional amine type epoxy resin [C] A bisphenol F epoxy resin having an epoxy equivalent weight of 450-4,500 [D] An aromatic amine curing agent [E] A block copolymer having a reactive group that can be reacted with an epoxy resin [F] Thermoplastic resin particles that are insoluble in an epoxy resin

The invention discloses a polymer electrolyte which comprises, as the main component, a block / graft copolymer comprising, as constituent components, polymer blocks (A), (B) and (C) which cause phase-separation from one another, wherein the polymer block (A) comprises a vinyl compound unit as the main repeating unit and has an ion-conductive group, the polymer block (B) comprises a vinyl compound unit capable of forming a flexible phase as the main repeating unit and forms a flexible phase, and the polymer block (C) comprises a styrene derivative unit carrying an alicyclic hydrocarbon group having a polycyclic structure as the main repeating unit and forms a restrained phase; a membrane; a membrane-electrode assembly; and a solid polymer fuel cell. The polymer electrolyte has excellent durability and heat resistance, and shows little change in properties, such as the change in dimension between a dried state and a wet state, the change in mechanical properties and the change in methanolcross-over before and after the immersion in a methanol solution. The polymer electrolyte can be used stably in a solid polymer fuel cell during the long-term operation of the solid polymer fuel celland enables excellent start-up performance of the solid polymer fuel cell.

The present invention provides a driving circuit of a liquid crystal display device, which improves the Vgoff characteristics of the driving circuit composed of 4 thin film transistors and 2 capacitors, and makes the characteristic change of the thin film transistor caused by the DC stress of the driving circuit composed of 6 thin film transistors minimum, so that the operating characteristics are stable. The drive circuit of the liquid crystal display device includes: the first and second transistors are connected in series between the output stage of the n-1 circuit and the Vss stage; the third transistor is driven by a clock signal; the fourth transistor is connected to the drain To the source of the third transistor; the fifth and sixth transistors are connected in series between the VDD terminal and the Vss terminal; the seventh transistor is driven by the output signal of the n+1 circuit; the eighth transistor is driven by the n+ The output signal of the circuit 1 is driven; the first capacitor is formed before the gate of the third transistor; and the second capacitor is formed between the gate and drain of the sixth transistor.

The invention relates to a toner, a development agent, a toner container, and an image forming apparatus for electrophotography. Provided is a toner that is endurable to an external force, does not disengage with, move or bury an external additive, has excellent heat preservation and fixation performance, can inhibit changes in characteristics such as charge amount, mobility, agglutination degree and inhibit image quality degradation, a development agent using the toner, a development agent container, and an image forming apparatus. The toner is composed of a mother toner particle containing a binder resin and a coloring agent, and an external additive to cover the mother toner particle, wherein the external additive contains a resin particle which has an outer shell layer formed of silica or modified silica; the resin particle has a non-spherical form with a shape factor (SF) of 1.20 or greater as calculated by the following formula (I): Shape factor(SF)=[(Absolute maximum length of particle)2 / Projected area of particle)]([pi] / 4).

A semiconductor device has a semiconductor substrate with a semiconductor layer, a first element region formed on the semiconductor layer and on which are formed first semiconductor elements sensitive to stress, and a second element region formed on the semiconductor layer and on which are formed second semiconductor elements less sensitive to stress than the first semiconductor elements. The first and second element regions are formed in the semiconductor layer at preselected depths from a surface of the semiconductor layer. A buffer region for suppressing stress generated in the first element region is formed of a trench filled with a filler material and extending into the semiconductor layer so that a depth of the trench from the surface of the semiconductor layer is greater than the preselected depths, and so that a portion of the semiconductor layer exists under the filled trench of the buffer region.

A lithium ion capacitor has an electrolytic solution that contains: 100 parts by volume of a solvent containing 20 to 50 parts by volume of propylene carbonate, 10 to 35 parts by volume of dimethyl carbonate, and 15 to 70 parts by volume of ethyl methyl carbonate; and lithium bis(fluorosulfonyl)imide, as an electrolyte. The lithium ion capacitor can maintain its initial high capacitance and low internal resistance, while also undergoing minimal characteristics changes in a low-temperature environment, even after exposure to a high-temperature, high-voltage environment.

A plasma-processing device comprises a constituent member which performs plasma- processing of a noble metal material and a ferroelectric material on a substrate to be processed and is exposed to plasma while being heated. The constituent member is made of an aluminum alloy having an aluminum purity of 99% or higher.

A portable acoustic apparatus includes a sound outlet ( 3 ) formed in the front wall ( 61 ) of a housing ( 6 ); an acoustic converting element ( 1 ) fixed in the housing in such a manner that a front chamber ( 2 ) is formed between the acoustic converting element and the front wall ( 61 ), and a back chamber ( 4 ) is formed between the acoustic converting element and the back wall ( 62 ) of the housing ( 6 ); and a duct ( 5 ) that is formed in the front wall ( 61 ) around the sound outlet ( 3 ) and communicates to the outside of the housing. The minimum inner width W of the outer casing ( 63 ) of the housing ( 6 ) is made equal to or less than the standard diameter of the human concha.

Disclosed is a polyimide metal laminate wherein a copper foil and a stainless steel foil are formed on respective sides of a polyimide resin, or a stainless steel foil is formed on both sides of the polyimide resin. This polyimide metal laminate is characterized in that the peel strength between the stainless steel foil or copper foil and the polyimide resin is not less than 1.0 kN / m, the peel strength between the stainless steel foil or copper foil and the polyimide resin after thermally treating the polyimide metal laminate at 350 DEG C for 60 minutes is not less than 1.0 kN / m, and no swelling or deformation occurs in the polyimide metal laminate after the 60-minute heat treatment at 350 DEG C.

According to the present invention, a surface-coated AlN filler for obtaining a heat-resistant heat dissipation material that is suppressed in deterioration of characteristics such as thermal conductivity due to hydrolysis of the AlN filler surface is obtained, said heat dissipation material being able to be used in a heat dissipation member that requires high thermal conduction characteristics. Asilicone-based hybrid polymer-coated AlN filler according to the present invention is mainly composed of aluminum nitride; and the surface of this filler is coated with a silicone-based hybrid polymer. If 5 g of this filler, which has an average particle diameter of 20-40 [mu]m, is added into 50 mL of an ion exchange water, the electrical conductivity of the water after being held at 121DEG C under saturated water vapor pressure for 50 hours is 350 [mu]S / cm or less.

The invention relates to a thin film preparation technology, in particular to an infrared optical thin film protective film and a preparation method thereof. The infrared optical thin film protective film is characterized in that the protective film is plated on the outer layer of an infrared optical thin film and is organic silicide containing one non-hydrolysis group and one hydrolyzable group at a minimum; in film-plated equipment, the multilayer infrared optical thin film is prepared on a substrate through an electronic gun or an evaporation blocking method, in the same film-plated equipment, the protective film is prepared on the outer layer of the multilayer infrared optical thin film through the evaporation blocking method. The infrared optical thin film protective film and the preparation method thereof have the advantages that the infrared optical thin film can be effectively protected, hardness is high, friction resistance is good, and meanwhile characteristics of the infrared optical thin film are changed slightly; the preparation method is compatible with a preparation method of a conventional infrared optical thin film, the process matching property is good, the film plating temperature is low, and cost is correspondingly lowered.

A piezoelectric electroacoustic transducer includes a piezoelectric diaphragm having a substantially rectangular shape which vibrates in the thickness direction when an alternating current is applied between electrodes of the piezoelectric diaphragm, a housing which stores the piezoelectric diaphragm, and a pair of terminals formed in the housing by insert molding. One end of each terminal is inserted inside the housing and includes a body portion fixed to the housing and wing portions which extend from both sides of the body portion toward the corners of the housing. The wing portions are not fixed to the housing, and stress-relieving portions are disposed between the body portion and the wing portions so that the wing portions are able to move toward the inside of the housing. Each electrode of the piezoelectric diaphragm is connected to at least one of the wing portions of the terminals by a conductive adhesive.

The invention provides a method, a system and a lens for improving imaging resolution by using a square hole type liquid crystal lens. The system comprises a camera, a glass main lens, the square hole type liquid crystal lens, a polarizing film and a target object, the method comprises the following steps: (1) acquiring an image sequence by utilizing the optical axis movement of the square hole type liquid crystal lens; and (2) obtaining a high-resolution image by using an image reconstruction algorithm based on the image sequence. Compared with the prior art, the super-resolution sampling of the object is realized on the basis of no mechanical movement, the complexity of the system is reduced, the reliability is improved, and the cost is saved. According to the method, the step of image registration is omitted, and the image calculation efficiency is improved while the image reconstruction effect is ensured. Compared with a previous round hole type optical axis movable lens, the square hole type liquid crystal lens used in the invention is more stable, and the characteristic change of the lens is smaller after the optical axis is moved, so that the obtained image sequence is clearer, and the subsequent resolution improvement effect is better.

When a semiconductor film is irradiated with conventional pulsed laser light, unevenness called ridges is caused on the surface of the semiconductor film. In the case of a top gate type TFT, the characteristics of the element vary depending on the ridge, specifically, there is a problem of variation among a plurality of thin film transistors electrically connected in parallel with each other. According to the present invention, when manufacturing a circuit including a plurality of thin film transistors, the width LP of the region (excluding the microcrystalline region) melted by irradiating the semiconductor film with continuous wave laser light is increased, and a plurality of thin film transistors ( active layers electrically connected in parallel with each other).

Disclosed is an adhesive composition (I) characterized by containing a polyurethane polyurea resin (A) having a weight average molecular weight of 80,000-250,000 and an acid number of 3-25 mgKOH / g and an epoxy resin (B). The polyurethane polyurea resin (A) is obtained by reacting a urethane prepolymer (d) having an isocyanate group, a polyamino compound (e) and a monoamino compound (f) under the conditions stated below. The urethane prepolymer (d) having an isocyanate group is obtained by reacting a polyol compound (a), an organic diisocyanate (b) and a diol compound (c) having a carboxyl group. (i) The ratio between isocyanate groups of the urethane prepolymer (d) having an isocyanate group and amino groups of the polyamino compound (e) and the monoamino compound (f), namely amino groups / isocyanate groups is from 0.8 / 1 to 0.999 / 1 (molar ratio). (ii) The ratio of amino groups of the polyamino compound (e) in the 100 mol% of the total of the amino groups of the polyamide compound (e) and the amino groups of the monoamino compound (f) is 90.0-97.0 mol%.