98results about How to "Inhibition of characteristic changes" patented technology

A semiconductor memory comprises: a first conductivity type semiconductor substrate and one or more memory cells each constituted of an island-like semiconductor layer having a recess on a sidewall thereof, a charge storage layer formed to entirely or partially encircle a sidewall of the island-like semiconductor layer, and a control gate formed on the charge storage layer, wherein at least one charge storage layer of said one or more memory cells is partially situated within the recess formed on the sidewall of the island-like semiconductor layer.

There is provided a magnetic antenna, suitable for use in an RFID tag and an RFID tag reader / writer, which operates stable even if brought close to a metallic object and suitable for mass-production, and a board mounted with the magnetic antenna. The magnetic antenna has a coil comprising a magnetic layer and a conductive layer provided on the magnetic layer via an insulating layer. Alternatively, the magnetic antenna has a plurality of coils each comprising a magnetic layer having a square or rectangular shape and arranged radially. One ends of the coils are connected in series or parallel to one another by the magnetic layers thereof such that the coils have the same polarity. An insulating layer is provided on one or both outer surface of the coils, and a conductive layer is provided on an outer surface of at least one of the insulating layers. The magnetic antenna is produced using an LTCC technology.

Resin-sealing of a semiconductor element is carried out in two processes, by (I) forming a first sealing-resin layer by (i) sealing a connecting region of the semiconductor element and a wiring pattern with a first sealing resin, and (ii) curing the first sealing-resin, and then (II) forming a second sealing-resin layer by (i) providing the semiconductor element with a second sealing resin so that at least an edge portion of the semiconductor element is sealed, and (ii) curing the second sealing-resin. A semiconductor device thus obtained has a two-layer structure of the sealing-resin including (I) the first sealing-resin layer sealing the connecting region of the semiconductor element and the wiring pattern and (II) the second sealing-resin layer being so provided to the semiconductor element that at least an exposed edge portion of the semiconductor element is sealed.

The invention relates to an organic light emitting diode driving circuit adaptive for preventing organic light emitting diode driving equipment characteristic changes and an organic light emitting diode display employing the drive circuit. The organic light emitting diode drive circuit includes an organic light emitting diode which emits light with a current, a first transistor, a second transistor and a stress compensation circuit. The first transistor supplies a data voltage to a first node in response to a scan pulse. The second transistor controls a current flowing in the organic light emitting diode by the data voltage on the first node. The stress compensation circuit discharges the first node in response to a reset pulse. The organic light emitting diode driving circuit is adaptive to compensate characteristic changes of the organic light emitting diode drive circuit.

The method for fabricating the semiconductor device includes the steps of: forming an insulating film 20, a conductive film 22 and an insulating film 24 over a semiconductor substrate 10 having a first to a third region; removing an insulating film 24, the conductive film 22 and an insulating film 20 formed in the second region and the third region; forming an insulating film 38 in the second region and the third region; removing the insulating film 24 in the first region and the insulating film 38 in the third region; forming an insulating film 44 in the third region; after a conductive film 52 has been formed, patterning the conductive films 22, 52 in the first region to form a gate electrode 58; and patterning the conductive film 52 to form gate electrodes 62 in the second region and the third region while removing the conductive film 52 over the gate electrode 58.

A resonator device includes a base substrate having a fixation section to be attached to a mounting board and a free end, a resonator element having one end connected to a connection section located on the free end side of the base substrate, and a lid member adapted to airtightly seal the resonator element in a space between the lid member and the base substrate.

A thin-film device comprises a substrate and a capacitor provided on the substrate. The capacitor incorporates: a lower conductor layer; a dielectric film a portion of which is disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The lower conductor layer has a top surface, a side surface, and a corner portion formed by the top and side surfaces. The upper conductor layer incorporates an upper electrode portion having a bottom surface opposed to the top surface of the lower conductor layer with the dielectric film disposed in between. When seen from above the upper conductor layer, the periphery of the bottom surface of the upper electrode portion is located inside the periphery of the top surface of the lower conductor layer without touching the periphery of the top surface of the lower conductor layer.

An antenna combined with a terminal housing is disclosed. The disclosed antenna includes an outer frame radiator, which is joined to a side wall of the terminal housing, and an inner frame radiator, which has one end joined to a first point on the outer frame radiator and the other end joined to a second point on the outer frame radiator, and which forms a loop by joining the outer frame radiator, where a feed signal is provided to the inner frame radiator. The disclosed antenna provides the advantages of preventing property changes caused by contact between a person's body and the terminal, and of minimizing mounting space while maintaining stable characteristics.

The performance of the semiconductor device which formed the metal silicide layer in the salicide process is improved. An element isolation region is formed in a semiconductor substrate by the STI method, a gate insulating film is formed, a gate electrode is formed, n+ type semiconductor region and p+ type semiconductor region for source / drains are formed, a metallic film is formed on a semiconductor substrate, and a barrier film is formed on a metallic film. And after forming the metal silicide layer to which a metallic film, and a gate electrode, n+ type semiconductor region and p+ type semiconductor region are made to react by performing first heat treatment, a barrier film, and an unreacted metallic film are removed, and the metal silicide layer is left. An element isolation region makes compressive stress act on a semiconductor substrate. A barrier film is a film which makes a semiconductor substrate generate tensile stress, and the metal silicide layer which consists of mono-silicide MSi of metallic element M which forms a metallic film is formed in the first heat treatment.

The object of the present invention is to realize high efficiency and improved productivity at the same time. A photoelectric conversion device comprises a unit having a semiconductor structure, the unit comprises: a conductive first impurity semiconductor layer; a conductive second impurity semiconductor layer reverse to the conductive first impurity semiconductor layer; and a semiconductor layer comprising a crystal region over the first impurity semiconductor layer and the second impurity semiconductor layer in an amorphous structure. The flow ratio of the dilution gas is set more than 1 time and less than 10 times of the semiconductor material gas, preferably setting more than 1 time and less than 6 times, and leading in a reaction space to generate plasma to form a semiconductor layer comprising a crystal region.

The invention provides a film transistor, a pixel structure, a display substrate, a display panel and a display device. The film transistor comprises a source electrode and a drain electrode. The center point of the source electrode and the center point of the drain electrode are symmetrical to each other in shape, and the source electrode and the drain electrode are not parallel in shape. The source electrode and the drain electrode of the film transistor are not parallel in shape, that is to say, the source electrode and the drain electrode are curves or multi-segment lines but not straight lines. Such source and drain electrodes enables the ratio of width to length (W / L) of the film transistor to be increased. In this way, the charging time for a pixel structure, charged by a data line, included in the film transistor is reduced, and the display demand is met. Meanwhile, the center point of the source electrode and the center point of the drain electrode are symmetrical to each other, so the characteristics of the film transistor are prevented from changing during switching between positive and negative frames, the sustaining voltage of pixels keeps unchanged, and unsteady flickering is avoided.

An oxide transistor includes: a channel layer formed of an oxide semiconductor; a source electrode contacting a first end portion of the channel layer; a drain electrode contacting a second end portion of the channel layer; a gate corresponding to the channel layer; and a gate insulating layer disposed between the channel layer and the gate. The oxide semiconductor includes hafnium-indium-zinc-oxide (HfInZnO). An electrical conductivity of a back channel region of the channel layer is lower than an electrical conductivity of a front channel region of the channel layer.

A light exposure unit includes: a board on which to mount light-emitting elements; an optical system configured to cause light emitted from the light-emitting elements to converge; a support member holding the board and the optical system; and a heat sink member configured to dissipate heat from the optical system.

Provided is a semiconductor device in which occurrence of humps can be suppressed and variations in characteristics of the semiconductor device can be suppressed. The semiconductor device includes: an element isolation film (200) formed in a semiconductor layer, the element isolation film (200) defining an element formation region; a gate electrode (130) formed above the element formation region, the gate electrode (130) having ends respectively extending above the element isolation film (200); and impurity regions (110) which are to be a source region and a drain region which are formed in the element formation region so as to sandwich therebetween a channel formation region immediately under the gate electrode (130), the gate electrode (130) including at each of the ends thereof a high work function region (124) in which work function is higher than work function in other regions over at least a part of an interface between the element formation region and the element isolation film (200).

A light exposure unit includes: a board on which to mount light-emitting elements; an optical system configured to cause light emitted from the light-emitting elements to converge; a support member holding the board and the optical system; and a heat sink member configured to dissipate heat from the optical system.

A liquid ejecting head includes: a plurality of pressure generating chambers communicating with nozzles through which a liquid is ejected; a manifold communicating with the plurality of pressure generating chambers; a flexible member that has a surface on one side which defines at least a part of a wall of the manifold, that has a surface on the other side, on which an adhesive layer is formed, and that has a compliance region, which is able to perform deflection in response to pressure fluctuation in the manifold, in a region in which the adhesive layer is formed; a compliance space disposed on a side opposite to the manifold through the flexible member; a cap member facing the flexible member through the compliance space; and a frame-like member that is disposed between the flexible member and the cap member and has a cantilever, in which the cantilever is fixed to at least a part of the flexible member of the compliance region and has an unfixed region which is not fixed to the cap member on the distal end side thereof.