Photoelectric conversion device and method for manufacturing the same

Abstract

The object of the present invention is to realize high efficiency and improved productivity at the same time. A photoelectric conversion device comprises a unit having a semiconductor structure, the unit comprises: a conductive first impurity semiconductor layer; a conductive second impurity semiconductor layer reverse to the conductive first impurity semiconductor layer; and a semiconductor layer comprising a crystal region over the first impurity semiconductor layer and the second impurity semiconductor layer in an amorphous structure. The flow ratio of the dilution gas is set more than 1 time and less than 10 times of the semiconductor material gas, preferably setting more than 1 time and less than 6 times, and leading in a reaction space to generate plasma to form a semiconductor layer comprising a crystal region.

Description

Technical field [0001] The invention relates to a photoelectric conversion device with a semiconductor junction and a method for manufacturing the photoelectric conversion device. Background technique [0002] In order to cope with the global environmental problems in recent years, the market for photovoltaic conversion devices represented by solar cells such as residential solar power generation systems has been expanding. Bulk photoelectric conversion devices using monocrystalline silicon or polycrystalline silicon with high photoelectric conversion efficiency have been put into practical use. Photoelectric conversion devices using single crystal silicon or polycrystalline silicon are manufactured by dividing them from large silicon ingots. However, it takes a long time to manufacture a large silicon ingot, so its productivity is not high. Moreover, due to the limitation of the supply of silicon raw materials, it cannot cope with the expansion of the market and is in a state of...

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Problems solved by technology

Therefore, there is a problem that the productivity of a photoelectric conversion device using microcrystalline silicon is lower than that of a photoelectric conversion device using amorphous silicon.

[0011] In the aforementioned Patent Document 1, crystalline silicon (microcrystalline silicon is exemplified) with uniform crystallinity and film properties is formed by controlling the pulse modulation of the high-frequency plasma CVD method. However, compared with the production of amorphous silicon, film formation Slow, so not practical

In addition, in the above-mentioned Patent Document 2, an increase in the film formation rate is sought, but a silicon layer whose thickness is several digits higher than that of amorphous silicon is required, and the problem of productivity cannot be solved.

Therefore, at present, the improvement of characteristics such as high efficiency and the improvement of productivity cannot be achieved at the same time, and the penetration rate of photoelectric conversion devices using silicon thin films cannot reach that of bulk photoelectric conversion devices.

[0012] In addition, in the method of bonding a single crystal silicon substrate and other substrates using the paste for electrode formation as an adhesive as in the above-mentioned Patent Document 3, the degree of adhesion of the adhesive part and the electrode formation as an adhesive Deterioration of paste (decrease in adhesive strength) is a problem, and there is concern about the reliability of the completed solar cell

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