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145 results about "Extrinsic semiconductor" patented technology

An extrinsic semiconductor is one that has been doped; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an intrinsic semiconductor. In an extrinsic semiconductor it is these foreign dopant atoms in the crystal lattice that mainly provide the charge carriers which carry electric current through the crystal. The doping agents used are of two types, resulting in two types of extrinsic semiconductor. An electron donor dopant is an atom which, when incorporated in the crystal, releases a mobile conduction electron into the crystal lattice. An extrinsic semiconductor which has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. An electron acceptor dopant is an atom which accepts an electron from the lattice, creating a vacancy where an electron should be called a hole which can move through the crystal like a positively charged particle. An extrinsic semiconductor which has been doped with electron acceptor atoms is called a p-type semiconductor, because the majority of charge carriers in the crystal are positive holes.

Thin-film transistor and display device

InactiveUS20090218572A1Increasing field-effect mobilityIncrease speedTransistorDisplay deviceImpurity
A thin-film transistor in which problems with ON-state current and OFF-state current are solved, and a thin-film transistor capable of high-speed operation. The thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions, provided with a space therebetween so as to be overlapped with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of semiconductor layers in which an impurity element which serves as an acceptor is added, overlapped over the gate insulating layers with the gate electrode and the impurity semiconductor layers, and disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer being in contact with the gate insulating layer and the pair of semiconductor layers and extended between the pair of semiconductor layers.
Owner:SEMICON ENERGY LAB CO LTD

Thin film transistor

A thin film transistor having favorable electric characteristics with high productively is provided. The thin film transistor includes a gate insulating layer covering a gate electrode, a semiconductor layer in contact with the gate insulating layer, an impurity semiconductor layer which is in contact with part of the semiconductor layer and functions as a source region and a drain region, and a wiring in contact with the impurity semiconductor layer. The semiconductor layer includes a microcrystalline semiconductor region having a concave-convex shape, which is formed on the gate insulating layer side, and an amorphous semiconductor region in contact with the microcrystalline semiconductor region. A barrier region is provided between the semiconductor layer and the wiring.
Owner:SEMICON ENERGY LAB CO LTD

Photoelectric conversion device and manufacturing method thereof

A novel photoelectric conversion device and a manufacturing method thereof are provided. The photoelectric conversion device includes an insulating layer over a light-transmitting base substrate; a single crystal semiconductor layer provided with a plurality of depressions which are filled with the insulating layer; a plurality of first impurity semiconductor layers formed in stripes having one conductivity type and a plurality of second impurity semiconductor layers formed in stripes having a conductivity type which is opposite to the one conductivity type, which are arranged alternately and do not overlap with each other, in a surface layer or over a surface of the single crystal semiconductor layer; first electrodes which are in contact with the first impurity semiconductor layers; and second electrodes which are in contact with the second impurity semiconductor layers.
Owner:SEMICON ENERGY LAB CO LTD

Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof

Disclosed is a manufacturing method of a thin film transistor, which enables the formation of a thin film transistor by using only one photomask. The method includes: over a substrate sequentially forming a first insulating film, a first conductive film, a second insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film; forming a resist mask thereover using a first photomask; performing a first etching to allow the side surface of the layers including an upper portion of the first insulating film, the first conductive film, the second insulating film, the semiconductor film, the impurity semiconductor film, and the second conductive film to be coplanar to a side surface of the resist mask; and performing a second etching to selectively etch the first conductive film to allow the side surface of the first conductive film is located inside the side surface of the layers.
Owner:SEMICON ENERGY LAB CO LTD

Semiconductor device including bipolar transistor and buried conductive region

A semiconductor device and a method for manufacturing the device using a semiconductor substrate of a high resistance with improved Q value of a passive circuit element. Leakage current due to an impurity fluctuation, in the high resistance semiconductor substrate and noise resistance of an active element in the high resistance semiconductor substrate are improved. The semiconductor device includes a bipolar transistor at a main surface of and in the semiconductor substrate. The bipolar transistor includes a semiconductor layer of a first conductivity type at a bottom portion of the bipolar transistor and the semiconductor device includes a buried layer of a second conductivity type, located in the semiconductor substrate and facing the semiconductor layer of the first conductivity type.
Owner:MITSUBISHI ELECTRIC CORP
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