30results about How to "Increase compound rate" patented technology

The method is applicable to manufacture silicon semiconductor binistor with at least one PN junction such as GTO, IGBT etc. General manufacturing steps is carried out till the step of making metalized electrode. Platinum-silicon alloy is made on surface of silicon. Using proton orª‡particle injection forms local high density defect area. Heating and annealing makes the defect area absorb platinumto convert to platinum impurity range. Then, General manufacturing steps is carried out till manufacturing completion. The performances of the invention are better than present life control technique. The parts made by the invention possesses higher switching speed and backward recovery speed, but the forward voltage drop and reverse leakage are not increased visibly.

The invention discloses a high-speed LED optical communication resonant quasi-switching modulator. The power supply unit is a voltage-limiting constant-current control unit, and the control unit is used to generate and output control signals to realize timing control; the power supply unit, inductance, resistance and current The source I1 is connected in series in sequence to form a loop; the anode of the LED is connected to the positive pole of the power supply unit, and the cathode is connected to the positive pole of the current source I2 through the switch K101; the cathode of the LED is connected to the positive pole of the current source I1; when the control unit sends a control signal to make the switch K101 turn on, the limit The voltage and constant current control unit supplies positive power to the LED to turn on the LED quickly; at the same time, the inductor stores energy; when the control unit sends a control signal and the switch K101 is turned off, the constant current drops, and the inductor generates a negative voltage. Reverse power supply to the LED during the falling time, so that the LED light intensity drops rapidly. The invention has fast switch and good optical communication effect.

The invention discloses a high-speed LED optical communication modulator. The high-speed LED optical communication modulator comprises a control unit and a variable power supply unit; the variable power supply unit is an energy supply unit capable of switching in the positive and negative directions; the control unit generates switching and sequential control signals so that the variable power supply unit is driven to supply power to an LED; the sequential control signals are used for reducing the bending of an energy band via sequential control so that radiative recombination of carriers is improved; when the variable power supply supplies power in the positive direction, the LED is turned on, and the carriers are over-injected; and when the variable power supply supplies power in the reverse direction, the LED is turned off, and the carriers are injected in a reverse manner. The high-speed LED optical communication modulator also comprises a discharge circuit used for further accelerating the turn-off. According to the high-speed LED optical communication modulator, the over-injection of the carriers during turn-on and reverse injection of the carriers during turn-off are controlled so that the recombination rate of the carriers is increased, and the switching speed is greatly increased; the turn-off is further accelerated via the auxiliary discharge circuit; and the bending of the energy band is reduced via sequential control, and the radiative recombination of the carriers is improved.

The invention discloses a structure and a preparation method of a blue light organic light emitting diode which utilizes the plasmon resonance effect of silver nanocubes to enhance device performance. Cubic layer, blue light emitting layer, electron transport layer, metal cathode. The introduction of silver nanocubes can effectively improve the performance of blue organic light emitting diodes. The preparation process includes: firstly adopting a synthetic method to prepare silver nanocubes, and then wrapping the silver nanocubes with a silicon dioxide layer. The preparation of the device is to clean the substrate first, then spin-coat to form a film, and then evaporate to form a film in a vacuum, and then cool it after the end. In the invention, the silver nanocube is spin-coated between the hole transport layer and the blue light emitting layer, and the efficiency of the blue light organic light emitting diode is effectively improved by utilizing the strong plasma resonance effect of the silver nanocube. The invention is simple and easy to implement, and has potential application value.

The invention relates to a high-speed modulation light-emitting diode and a manufacturing method thereof. It includes a light-emitting diode chip, the light-emitting diode chip includes a light-emitting epitaxial structure, and the light-emitting epitaxial structure includes a buffer layer stacked in sequence, a first N-type GaN contact layer, a GaN depletion layer, a P-type AlGaN electron blocking layer, The first p-type indium gallium nitride layer, the quantum well layer, the second p-type indium gallium nitride layer, the n-type gallium nitride layer, the second n-type gallium nitride contact layer and the conductive layer, and the quantum well layer is undoped Any one of the In0.2Ga0.8N / In0.05Ga0.95N quantum well layer and the indium gallium nitride / gallium nitride quantum well layer deposited with a silicon-doped barrier with a concentration of 5×1017 cm-3 for four periods. The invention also provides a manufacturing method of the high-speed modulation light-emitting diode. The high-speed modulation light-emitting diode provided by the invention increases the modulation width while retaining light output power close to that of the traditional light-emitting diode.

The invention discloses a white light organic light emitting diode and a preparation method thereof. The white light organic light emitting diode comprises: an ITO glass substrate, a hole transport layer, a nano particle layer, a white light emitting layer, an electron transport layer and a composite metal cathode layer, and the nanoparticle layer is composed of a mixture of silver nanocubes wrapped by silicon dioxide and silicon dioxide nanospheres. Compared with the prior art, the present invention effectively improves the performance of white light organic light-emitting diodes by introducing silver nanocubes and silicon dioxide nanospheres wrapped in silicon dioxide, and has potential application value.

The embodiment of the invention discloses a distributed feedback laser chip and a preparation method thereof. Wherein the laser chip includes a substrate, a laser structure on one side of the substrate, a first electrode, and a second electrode; a grating pattern is arranged on the side adjacent to the second electrode of the laser structure, and the grating pattern includes a ridge structure, and the ridge structure It includes a first region and a second region arranged circularly along the first direction, the refractive index of the first region is greater than that of the second region; the second electrode covers the ridge structure and extends to a part of the second region, and The film layer where the grating pattern is located is in contact with the film layer on the side close to the substrate; wherein, the first direction is parallel to the plane where the substrate is located. The technical solution of the embodiment of the present invention has the advantages of high modulation rate, high internal quantum efficiency, low resistance, good single-mode characteristics, small stress, and low cost, and can greatly improve the modulation rate, electro-optical conversion efficiency, single-mode performance and Production yield, etc., are very conducive to mass production applications.

The invention discloses a high-speed LED optical communication resonant modulator, which includes a power supply unit, a control unit, an inductor, a resistor, a capacitor, an LED, a switch K101 and a switch K103; when K101 and K103 are turned on, the voltage limiting and constant current control unit Supply power to the LED in the forward direction, so that the LED is turned on quickly, and the resonant capacitor stores energy through the resonant inductor; when K103 is still on and K101 is off, the inductance and capacitor resonate, and the LED reverse recovery time To supply power, so that the LED fast electrical shutdown. It also includes K102. When K102 is turned on and K101 and K103 are turned off, the LED is further forwardly discharged in one direction. The invention improves the recombination rate of the carrier, so that the switching speed is greatly increased; the turn-off is further accelerated through the auxiliary discharge path; the bending of the energy band is reduced through the time sequence control, and the radiation recombination of the carrier is improved.

The invention discloses a visible light communication LED device, comprising four LED chips of which the geometric centers are overlapped and positioned on the same plane. The four LED chips are a first annular chip, a second annular chip, a third annular chip and a center chip from outside to inside. The edge of each chip is coiled with an annular metal positive electrode. The bottom surface of the visible light communication LED device, namely an n-type bottom surface of each chip, is connected with a device negative electrode. The device negative electrode is circular and positioned on a device bottom. A device annular positive electrode is connected on the edge of the device negative electrode and is mutually insulated with the device negative electrode. The metal annular positive electrode structure is formed on an annular or circular chip; recombination of electrons and hole carriers of a luminescent layer (quantum well layer) is enabled to be uniform; the recombination rate is effectively increased, and the response time of the visible light LED device is shortened; the visible light annular LED device can be made into a power type device of 1W; and the visible light communication LED device is suitable for being applied to the application field of LED lamps.

The invention discloses a high-speed LED optical communication bridge-type modulator, and the modulator comprises a power supply unit, an LED, a switch K101, a switch K102, a switch K103, a switch K104, a switch K105, a control unit, a voltage-limiting constant current control unit, and a constant voltage control unit. The switches K101 and K102 are connected, and the switches K103, K104 and K105 are disconnected. The forwarding power supply of the LED is carried out, thereby enabling the LED to be quickly overshot and connected. The switches K103 and K104 are connected, and the switches K101, K102 and K105 are disconnected. The reverse power supply of the LED is carried out, thereby enabling the LED to be quickly turned off. The control of time sequence controls the time of reverse power supply through the monitoring of a reverse current of the LED, and the reverse power supply is not carried out in the whole disconnection process but in a small time period, so as to prevent band bending from causing the great decrease of radiative recombination rate, and improving the disconnection speed of light. The switch K105 is connected, and the switches K101, K102, K103 and K104 are disconnected. The switch K105 is a discharge circuit which aims at speeding up the recombination of residual carriers of the LED, and controls the forwarding unidirectional discharge of the LED. The modulator improves the recombination speed of carriers, and is high in switching speed.