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White light organic light emitting diode and manufacturing method thereof

A technology of light-emitting diodes and white light, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, and electric solid-state devices, etc. It can solve the problems of low performance, difficulty in preparing multi-layer structures, and difficulty in controlling the behavior of carriers and excitons. Achieve the effect of reducing hole current, weakening adverse effects, and improving luminous intensity

Active Publication Date: 2019-06-07
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] "Full solution preparation" technology is considered to be an effective way to further reduce the cost of OLED and realize large-area display and lighting. It is relatively difficult to prepare a multilayer structure, and it is difficult to control the behavior of carriers and excitons in the device, resulting in lower performance

Method used

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  • White light organic light emitting diode and manufacturing method thereof
  • White light organic light emitting diode and manufacturing method thereof
  • White light organic light emitting diode and manufacturing method thereof

Examples

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preparation example Construction

[0046] The preparation method of the white light organic light emitting diode mainly includes the following steps:

[0047] Step 1: Put the ITO glass substrate 1 into acetone, ethanol and deionized water in order to ultrasonically clean it respectively, blow it dry with nitrogen, and place it in an oven for drying;

[0048] Step 2: Spin-coat the hole transport layer 2 on the cleaned ITO glass substrate 1, and the material used in the spin-coating is PEDOT:PSS;

[0049] Step 3: Dissolving the mixed nanoparticles composed of silver nanocubes 31 wrapped in silicon dioxide and silicon dioxide nanospheres 32 in ethanol, the silver nanocubes 31 wrapped in silicon dioxide and silicon dioxide in the mixed nanoparticles The volume ratio of the nanospheres 32 is 1:0.5-1:3, the volume percentage of the mixed nanoparticles and ethanol is 1%-3%, and the nanoparticle layer 3 is prepared by spin coating, and the nanoparticle layer 3 is prepared by spin coating. The coating speed is 2000rpm / ...

Embodiment 1

[0054] In the present invention, the white light organic light emitting diode is a solution-processed white light organic light emitting diode. The method for preparing the solution-processed white light organic light-emitting diode comprises the following steps:

[0055] Step 1: Put the ITO glass substrate 1 into acetone, ethanol and deionized water in sequence for ultrasonic cleaning for 10 minutes, blow dry with nitrogen, and place in an oven to dry;

[0056] Step 2: Spin-coat the hole transport layer 2, the material used in the spin-coating is PEDOT:PSS, the spin-coating speed is 2500rpm / s, the spin-coating time is 60s, and the spin-coating thickness is 50nm;

[0057] Step 3: Prepare the nanoparticle layer 3 by spin coating, and dissolve the mixed nanoparticles composed of silver nanocubes 31 and silica nanospheres 32 wrapped in silicon dioxide in an ethanol solution, wherein the silver nanometers wrapped in silicon dioxide The volume ratio of cube 31 to silica nanosphere...

Embodiment 2

[0065] In this embodiment, the white light organic light emitting diode is also a solution-processed white light organic light emitting diode, and the structure of the white light organic light emitting diode is the same as that of the first embodiment, and will not be repeated here.

[0066] The method for preparing the solution-processed white organic light-emitting diode is basically the same as the first embodiment, the main difference is that in this embodiment, the light-emitting material of the white light-emitting layer 4 is red, green and blue three primary color light-emitting materials.

[0067] Specifically, the light-emitting layer solution uses bipolar material 2,6-bis(3-(carbazol-9-yl)phenyl)pyridine (26DCzPPy), hole transport material 4,4′,4″-tris( Carbazol-9-yl) triphenylamine (TCTA) as a double host, doped with a certain proportion of blue light-emitting material (FIrpic), green light-emitting material tris (2-phenylpyridine) iridium (Ir(PPy) 3 ) and red ligh...

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Abstract

The invention discloses a white light organic light emitting diode and a manufacturing method thereof. The white light organic light emitting diode comprises an ITO glass substrate, a hole transport layer, a nano particle layer, a white light emitting layer, an electron transmission layer and a composite metal cathode layer stacked sequentially from bottom to top, wherein the nano particle layer is formed by mixing of silica-coated silver nanometer cubes and silica nanospheres. In comparison with the prior art, through introducing the silica-coated silver nanometer cubes and the silica nanospheres, the performance of the white light organic light emitting diode is effectively enhanced, and potential application value is achieved.

Description

technical field [0001] The invention relates to the technical field of organic electroluminescence, in particular to a white light organic light emitting diode and a preparation method thereof. Background technique [0002] Organic light-emitting diode (Organic Light-Emitting Diode, OLED), also known as organic electro-laser display, organic light-emitting semiconductor, has ultra-thin, low cost, low power consumption, wide viewing angle, full curing, self-illumination, low driving voltage (3~ 12V) and can realize many outstanding performances such as soft display, known as the next generation of "dream display". OLED devices are carrier double-injection light-emitting devices. Driven by forward voltage, electrons and holes are injected from the cathode and anode into the organic functional layer respectively, and the injected electrons and holes pass through the electron transport layer and the hole transport layer respectively. The layer migrates to the light-emitting lay...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
Inventor 邓玲玲马云杰杨家绮鱼天燕詹楠
Owner NANJING UNIV OF POSTS & TELECOMM
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