40results about How to "Enhance radiative recombination" patented technology

The invention discloses a laser stripping film LED (Light-Emitting Diode) and a preparation method thereof. A chip unit of the laser stripping film LED comprises a type n layer, a quantum well, a type p layer, a periodical metal nanometer structure, an electrode p, an insulating layer and an electrode n, wherein the type p layer is formed on the quantum well; the periodical metal nanometer structure is embedded into the type p layer; the abovementioned structures inversely cover on a substrate; and a bonding pad p is arranged at one corner of a chip. According to the laser stripping film LED, the coupling resonance functions of surface plasmons and a quantum well structure are utilized, so that the radiation compounding efficiency and light-emitting efficiency of the LED are increased greatly under bulk injection, and meanwhile, certain effects are achieved on green-yellow light and ultraviolet light LEDs with low light-emitting efficiency; laser scribing and corroding methods are adopted for partitioning the chip unit, so that the warping of an epitaxial wafer is reduced, and the processing difficulty and cost are lowered; and specific to the bonding pad p, a protection layer and silver layer evaporation process is adopted, so that the manufacturing process of the bonding pad p is simplified, and the process cost is lowered; and a hot phosphoric acid coarsening method is adopted, so that the process cost is lowered, and the light-emitting efficiency of the LED is increased.

This invention relates to humid erosion sapphire pattern underlay method, which comprises the following steps: adopting general C surface sapphire silicon dioxide mask layer coated; using technique of etching technique to the silicon dioxide mask pattern along [1100] or [1120] direction; using sulfur acid or mixture liquid of sulfur and phosphorus acids as erosion liquid underlay; finally using the rare hydrofluoric acid liquid to erode the mask layer to get the sapphire round underlay.

The invention relates to a green nitride LED epitaxial wafer and a growth method thereof, and belongs to the technical field of semiconductor photo-electricity. The method is characterized in that an InGaN material layer with a low content of In components is grown between a quantum barrier and a quantum well in each quantum well active area when a plurality of quantum well active areas are grown; a quantum barrier is grown on a cap layer in a last quantum well active area, a hole injection layer is grown on the quantum well, and a p-AlGaN electronic blocking layer is grown on the hole injection layer. According to the green nitride LED epitaxial wafer and the growth method thereof, the process is reasonable, and the production is facilitated; LED chips are manufactured through a standard chip process, so that the internal quantum efficiency is improved, and the hole injection efficiency is improved greatly; and manufactured chips are high in luminous flux after being packaged, the inverse antistatic capacity reaches more than ten thousand volts, the electricity is not leaked under 8-volt inverse voltage measurement, and the working voltage is smaller than 3.1 volts under a 15 mA forward current.

This invention relates to humid erosion sapphire pattern underlay method, which comprises the following steps: adopting general C surface sapphire silicon dioxide mask layer coated; using technique of etching technique to the silicon dioxide mask pattern along [1100] or [1120] direction; using sulfur acid or mixture liquid of sulfur and phosphorus acids as erosion liquid underlay; finally using the rare hydrofluoric acid liquid to erode the mask layer to get the sapphire round underlay.

The invention discloses a high-speed LED optical-communication resonant-type modulator. The modulator comprises a power supply unit, a control unit, an inductor, a resistor, a capacitor, an LED, a switch K101 and a switch K103; when the K101 and the K103 are connected, the voltage-limiting constant-current control unit provides a forward power supply for the LED, the LED is quickly overshot and connected then, and the resonant capacitor performs energy storage through the resonant inductor; and, when the K103 is still connected, the K101 is disconnected, resonance is generated between the inductor and the capacitor, a reverse power supply is provided for the LED in an LED reverse recovery time, and then the LED is quickly and electrically disconnected. The modulator further comprises a K102; and, when the K102 is connected, and when the K101 and the K103 are disconnected, forward one-way discharging of the LED is performed further. The composite rate of carriers is improved, so the switch speed is greatly improved; disconnection is further accelerated through an auxiliary discharge pathway; and energy zone bending is reduced through time sequence control, and radiation recombination of the carriers is improved.

The invention discloses an ultraviolet LED epitaxial structure, which comprises a substrate, a buffer layer, an n-type AlGaN layer, a multi-quantum well region, a composite structure region and a p-type GaN layer arranged in turn from bottom to top. The composite structure region is composed of an Al<x>Ga<1-x>N concave layer, a p-type Al<y>Ga<1-y>N electron barrier layer and a p-type Al<z>Ga<1-z>Nhole injection layer in turn from bottom to top. By adjusting the Al components of all parts of AlGaN of the composite structure region individually or jointly, the composite structure region obtained not only can reduce the electron leakage in the multi-quantum well region, but also can increase hole injection. The epitaxial structure provided by the invention can enhance radiation recombinationand improve the optical output power of ultraviolet LED.

The invention discloses a laser stripping film LED (Light-Emitting Diode) and a preparation method thereof. A chip unit of the laser stripping film LED comprises a type n layer, a quantum well, a type p layer, a periodical metal nanometer structure, an electrode p, an insulating layer and an electrode n, wherein the type p layer is formed on the quantum well; the periodical metal nanometer structure is embedded into the type p layer; the abovementioned structures inversely cover on a substrate; and a bonding pad p is arranged at one corner of a chip. According to the laser stripping film LED, the coupling resonance functions of surface plasmons and a quantum well structure are utilized, so that the radiation compounding efficiency and light-emitting efficiency of the LED are increased greatly under bulk injection, and meanwhile, certain effects are achieved on green-yellow light and ultraviolet light LEDs with low light-emitting efficiency; laser scribing and corroding methods are adopted for partitioning the chip unit, so that the warping of an epitaxial wafer is reduced, and the processing difficulty and cost are lowered; and specific to the bonding pad p, a protection layer and silver layer evaporation process is adopted, so that the manufacturing process of the bonding pad p is simplified, and the process cost is lowered; and a hot phosphoric acid coarsening method is adopted, so that the process cost is lowered, and the light-emitting efficiency of the LED is increased.

The invention discloses an AlGaN-based deep-ultraviolet LED epitaxial structure and a preparation method thereof, which utilize Mg-doped quantum wells to enhance luminous efficiency. The deep ultraviolet LED structure includes a substrate, a buffer layer, an AlN layer, a superlattice stress regulation / dislocation filter layer, a non-doped AlGaN layer, an n-type AlGaN layer, a Mg-doped active light-emitting region multi-quantum well layer, A p-type AlGaN layer and a p-type GaN contact layer. In the invention, Mg impurity is doped in the middle third of the well layer of the multi-quantum well active luminescent layer of the LED, so as to improve the internal quantum efficiency and light extraction efficiency of the LED. Compared with the non-doped multiple quantum well structure, the Mg-doped multiple quantum well structure can suppress the quantum confinement Stark effect, improve the spatial overlap of electron and hole wave functions and radiative recombination efficiency, and provide more holes Participate in radiative recombination and improve internal quantum efficiency. Moreover, Mg doping can also introduce a local strain field, increase the compressive strain in the quantum well, increase the ratio of TE polarized light, and finally improve the light extraction efficiency of AlGaN-based deep ultraviolet LEDs.

The invention discloses an ultraviolet light-emitting diode with a p-i-n type multi-quantum well structure, which is sequentially arranged with a substrate, an AlN buffer layer, an n-type AlGaN layer, and a p-i-n type multi-quantum well Active region, electron blocking layer, p-type AlGaN layer, p-type GaN ohmic contact layer, n-type electrode arranged on n-type AlGaN layer, and p-type electrode arranged on p-type GaN ohmic contact layer. The ultraviolet light-emitting diode with p-i-n type multi-quantum well structure provided by the present invention can improve carrier concentration and injection efficiency, and can utilize the concentration difference of carriers in adjacent regions with different doping concentrations to form a The electric field with the opposite direction of the original built-in electric field can weaken the original built-in electric field between the p-type region and the n-type region, and reduce the quantum confinement Stark effect caused by the built-in polarization electric field, so that electrons and holes The radiative recombination efficiency is improved, and the luminous power of the ultraviolet light-emitting diode is enhanced.

The invention discloses a high-speed LED optical communication resonant quasi-switching modulator. The power supply unit is a voltage-limiting constant-current control unit, and the control unit is used to generate and output control signals to realize timing control; the power supply unit, inductance, resistance and current The source I1 is connected in series in sequence to form a loop; the anode of the LED is connected to the positive pole of the power supply unit, and the cathode is connected to the positive pole of the current source I2 through the switch K101; the cathode of the LED is connected to the positive pole of the current source I1; when the control unit sends a control signal to make the switch K101 turn on, the limit The voltage and constant current control unit supplies positive power to the LED to turn on the LED quickly; at the same time, the inductor stores energy; when the control unit sends a control signal and the switch K101 is turned off, the constant current drops, and the inductor generates a negative voltage. Reverse power supply to the LED during the falling time, so that the LED light intensity drops rapidly. The invention has fast switch and good optical communication effect.

The invention discloses a high-speed LED optical communication modulator. The high-speed LED optical communication modulator comprises a control unit and a variable power supply unit; the variable power supply unit is an energy supply unit capable of switching in the positive and negative directions; the control unit generates switching and sequential control signals so that the variable power supply unit is driven to supply power to an LED; the sequential control signals are used for reducing the bending of an energy band via sequential control so that radiative recombination of carriers is improved; when the variable power supply supplies power in the positive direction, the LED is turned on, and the carriers are over-injected; and when the variable power supply supplies power in the reverse direction, the LED is turned off, and the carriers are injected in a reverse manner. The high-speed LED optical communication modulator also comprises a discharge circuit used for further accelerating the turn-off. According to the high-speed LED optical communication modulator, the over-injection of the carriers during turn-on and reverse injection of the carriers during turn-off are controlled so that the recombination rate of the carriers is increased, and the switching speed is greatly increased; the turn-off is further accelerated via the auxiliary discharge circuit; and the bending of the energy band is reduced via sequential control, and the radiative recombination of the carriers is improved.

The invention discloses a semiconductor laser with enhanced luminous efficiency. According to the laser, on the basis of a traditional semiconductor laser preparation technology, high-vacuum equipment is adopted to performing cleavage on a laser epitaxial wafer in an ultrahigh-vacuum environment and cavity surface metal nanometer particle and cavity surface film preparation are performed. According to the laser disclosed by the invention, uniformly distributed metal nanometer particles are prepared on laser resonance cavity surface, free electrons of metal nanometer particles are utilized to be coupled with incident electromagnetic waves, collective oscillation of free electrons is caused, an enhanced local area electric field is generated, a strong near field enhancing effect is provided, radiative recombination of active region carriers of the laser is enhanced, and improvement of the luminous efficiency of the semiconductor laser device is realized.

The invention discloses a quantum dot solid film and a preparation method thereof. The method comprises the steps of: providing an initial quantum dot solid film; immersing the initial quantum dot solid film in an inorganic salt solution to carry out a ligand exchange reaction, annealing to obtain a Ligand-exchanged quantum dot solid film: coating the metal amine complex solution on the ligand-exchanged quantum dot solid film and annealing to obtain the quantum dot solid film. The quantum dot solid film prepared by the above method in the present invention not only effectively enhances the transmission and radiative recombination of charges (electrons and holes) between the quantum dot solid film layers, but also does not cause similar organic Changes in the solid-state film of quantum dots caused by the shedding of molecules from the surface of quantum dots, such as cracks caused by close packing, affect the performance of the device, thereby further improving the stability and life of the device.

The invention discloses a method and a device for detecting the effect of ultraviolet radiation on killing bacteria. The method comprises the following steps: firstly, obtaining the relationship between the ultraviolet radiation intensity, the ultraviolet radiation time and the bacteria killing rate; then, detecting the ultraviolet radiation intensity; Third, according to the ultraviolet irradiation intensity and the set irradiation time, the killing rate of bacteria is obtained. The device includes an ultraviolet intensity detection device, a time setting device and a sterilization rate calculation module. The invention can ensure the effectiveness of ultraviolet disinfection equipment to kill bacteria, especially Staphylococcus aureus, so that the sterilization process that cannot observe the effect originally has evaluation standards and control means, and can also avoid continued consumption after all Staphylococcus aureus is killed Energy, increasing the practicability of ultraviolet disinfection equipment.

The invention discloses a high-speed LED optical communication bridge-type modulator, and the modulator comprises a power supply unit, an LED, a switch K101, a switch K102, a switch K103, a switch K104, a switch K105, a control unit, a voltage-limiting constant current control unit, and a constant voltage control unit. The switches K101 and K102 are connected, and the switches K103, K104 and K105 are disconnected. The forwarding power supply of the LED is carried out, thereby enabling the LED to be quickly overshot and connected. The switches K103 and K104 are connected, and the switches K101, K102 and K105 are disconnected. The reverse power supply of the LED is carried out, thereby enabling the LED to be quickly turned off. The control of time sequence controls the time of reverse power supply through the monitoring of a reverse current of the LED, and the reverse power supply is not carried out in the whole disconnection process but in a small time period, so as to prevent band bending from causing the great decrease of radiative recombination rate, and improving the disconnection speed of light. The switch K105 is connected, and the switches K101, K102, K103 and K104 are disconnected. The switch K105 is a discharge circuit which aims at speeding up the recombination of residual carriers of the LED, and controls the forwarding unidirectional discharge of the LED. The modulator improves the recombination speed of carriers, and is high in switching speed.

The invention discloses a preparation method of a quasi-two-dimensional thin film, belongs to the technical field of light emitting diodes and display, solves the problems of complex process and low efficiency of the existing quasi-two-dimensional thin film preparation, and has the technical key points that a perovskite thin film is composed of three-dimensional perovskite nanocrystals and a quasi-two-dimensional perovskite thin film, wherein the surface of the three-dimensional perovskite nanocrystal is modified by an appropriate long-chain organic ligand to adapt to a cascade energy transfer process in the film, and the three-dimensional perovskite nanocrystal with a specific group is introduced into an anti-solvent, so that the nanocrystal can be used as a crystallization seed in a film preparation process to regulate and control a crystal growth kinetic process of the film, and the film is prepared. The three-dimensional perovskite nanocrystal thin film has the advantages that internal defects are passivated, the non-radiative recombination probability in the thin film is reduced, an extra carrier transmission channel from a small n phase to the three-dimensional perovskite nanocrystal can be constructed, photon-generated carrier radiative recombination is promoted, the light emission efficiency of the thin film is effectively improved, and the thin film is simple in preparation process and high in efficiency.

The disclosure provides a light-emitting diode epitaxial wafer and a manufacturing method thereof, which belong to the technical field of semiconductors. The active layer of the light-emitting diode epitaxial wafer includes a plurality of alternately grown quantum well layers and quantum barrier layers, and each quantum well layer is made of Al z Ga 1‑z N layer, the multiple quantum barrier layers include multiple first-type quantum barrier layers close to the N-type layer and multiple second-type quantum barrier layers close to the P-type layer, the first type of quantum barrier layer is Al m Ga 1‑m N layer, z<m, the second type of quantum barrier layer includes the first sublayer, the second sublayer and the third sublayer stacked in sequence, the first sublayer is Al x Ga 1‑x N layer, the second sublayer is Al y Ga 1‑y N layer, z<x<y, and the third sublayer is an AlN layer. The use of the light-emitting diode epitaxial wafer can improve the carrier confinement ability of the quantum barrier layer, so that more carriers can recombine in the quantum well layer, thereby improving the internal quantum luminous efficiency of the light-emitting diode.