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A flip-chip LED chip and a manufacturing method thereof

An LED chip and manufacturing method technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as low external quantum efficiency, and achieve the effects of reducing non-radiative recombination, improving light extraction efficiency, and increasing radiative recombination

Pending Publication Date: 2018-12-14
FOSHAN NATIONSTAR SEMICON
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Problems solved by technology

At present, the internal quantum efficiency of LED chips has reached more than 90%, but the external quantum efficiency is relatively low.

Method used

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  • A flip-chip LED chip and a manufacturing method thereof
  • A flip-chip LED chip and a manufacturing method thereof
  • A flip-chip LED chip and a manufacturing method thereof

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Embodiment Construction

[0042] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0043] Embodiment 1 of the manufacturing method of the flip-chip LED chip

[0044] This embodiment provides a method for manufacturing a flip-chip LED chip, the flow chart of which is as follows figure 1 shown, including the following steps:

[0045] S1: providing a substrate;

[0046] The material of the substrate may be sapphire, silicon carbide or silicon, or other semiconductor materials. In this embodiment, the preferred substrate is a sapphire substrate. Specifically, the substrate is a nano-pattern substrate, the flip-chip LED chip emits light from one side of the substrate, and nano-patterns are made on the substrate to increase the refraction efficiency, thereby improving the light-extraction efficiency of the flip-chip LED chip.

[0047] S2: sequentia...

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Abstract

A flip-chip LED chip and a manufacturing method thereof are provided, A buff layer and a light emitting structure are sequentially formed on that substrate, wherein the light emitting structure includes a first semiconductor layer, an active layer, a second semiconductor layer, metal reflective electrode layer, metal barrier layer, first reflective passivation layer, a first electrode and a secondelectrode, forming a second reflective passivation layer on the surface of the light emitting structure, etching the second reflective passivation layer, forming a first bare region on the surface ofthe first electrode, forming a second bare region on the surface of the second electrode, forming a first pad on the first bare region, and forming a second pad on the second bare region. The light emitted from the active layer passes through the metal reflective electrode layer, the first reflective passivation layer and the second reflective passivation layer, part of which is refracted from the side wall of the flip chip and part of which is reflected back to the side of the substrate, thereby greatly improving the light emitting efficiency of the active layer without adding additional complex processes, thereby increasing the brightness of the chip.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a flip-chip LED chip and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor device that uses energy released when carriers recombine to form light. LED chips have low power consumption, pure chromaticity, long life, small size, fast response time, energy saving and environmental protection, etc. Many advantages. [0003] The luminous efficiency of LED chips is mainly determined by internal quantum efficiency and external quantum efficiency. At present, the internal quantum efficiency of LED chips has reached more than 90%, but the external quantum efficiency is relatively low. Therefore, how to improve the external quantum efficiency of LED chips has become a key research direction in the industry. Contents of the invention [0004] The technical problem to be solved by the pre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/46H01L33/00
CPCH01L33/005H01L33/46
Inventor 王兵庄家铭
Owner FOSHAN NATIONSTAR SEMICON
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