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Preparation method of oxygen-sulfur dual-doped graphite phase carbon nitride

A technology of graphite phase carbon nitride and double doping, applied in chemical instruments and methods, chemical/physical processes, physical/chemical process catalysts, etc., can solve the problems of low photocatalytic activity and limited applications, and achieve high photocatalytic activity , Enhanced photocatalytic performance and reduced bandgap width

Inactive Publication Date: 2018-11-13
NANJING UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, g-C 3 N 4 It still has the disadvantages of easy recombination of electron-hole pairs and low photocatalytic activity, which limits its application in the field of photocatalysis.

Method used

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  • Preparation method of oxygen-sulfur dual-doped graphite phase carbon nitride
  • Preparation method of oxygen-sulfur dual-doped graphite phase carbon nitride
  • Preparation method of oxygen-sulfur dual-doped graphite phase carbon nitride

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Embodiment 1

[0026] Preparation of graphitic carbon nitride:

[0027] (1) Take 10g of melamine, fully grind it in a mortar, and place it in a crucible;

[0028] (2) Put it into a muffle furnace, and bake it at a high temperature of 550°C for 4h, with a heating rate of 2°C / min;

[0029] (3) After cooling to room temperature, centrifuge and wash three times with deionized water, and twice with absolute ethanol until neutral, then put it in an oven at 60°C overnight;

[0030] (4) After drying, grind and sieve to obtain g-C 3 N 4 powder.

[0031] Preparation of GCNOS:

[0032] (1) take by weighing the melamine of 4 parts of 10g;

[0033] (2) Take again by weighing 0.1g, 0.15g, 0.20g, each part of L-cysteine ​​of 0.25g, and put each part of L-cysteine ​​into four parts of 10g of melamine respectively, Grind thoroughly with a mortar, mix it evenly and put it in a crucible;

[0034] (3) Put the four samples into a muffle furnace, and bake them at 550°C for 4 hours at a heating rate of 2°C / ...

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Abstract

The invention discloses a preparation method of oxygen-sulfur dual-doped graphite phase carbon nitride. The method comprises the following steps: performing one-step thermal polymerization on melamineand L-cysteine at a temperature of 400-700 DEG C according to a mass ratio (1.5-2.5):100 of the L-cysteine to melamine, thereby obtaining the oxygen-sulfur dual-doped graphite phase carbon nitride. According to dual doping in the invention, the element O and the element S respectively enter the graphite phase carbon nitride in a chemical bond form. The energy gap of the doped graphite phase carbon nitride is reduced, the impedance is reduced, the graphite phase carbon nitride has high photocatalytic activity, and the photocatalytic nitrogen fixation efficiency of 2.0% of GCNOS reaches 0.509 mMg<-1>h<-1> within 240 minutes, and reaches 2.1 times that of the photocatalytic nitrogen fixation efficiency of pure graphite phase carbon nitride.

Description

technical field [0001] The invention belongs to the technical field of photocatalyst materials, and in particular relates to a preparation method of oxygen-sulfur double-doped graphite-phase carbon nitride. Background technique [0002] Semiconductor photocatalyst refers to a substance that can promote chemical reactions without changing itself under light. Its essence is that light excites semiconductors to generate electron-hole pairs with strong redox activity, thereby decomposing organic pollutants into non-toxic and harmless substances. CO 2 and H 2 O and other substances. [0003] Graphite carbon nitride (g-C 3 N 4 ) is the most stable allotrope of carbon nitride. Compared with other semiconductor materials, it has strong thermal stability and high chemical stability, can absorb visible light, and has the advantages of low toxicity, wide sources, and easy preparation. However, g-C 3 N 4 It still has the disadvantages of easy recombination of electron-hole pairs ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/24G01N21/31
CPCG01N21/3103B01J27/24B01J35/39
Inventor 郭子昌胡雅芳唐玉景
Owner NANJING UNIV OF SCI & TECH
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