High-speed modulation light emitting diode and manufacturing method thereof

Abstract

The invention relates to a high-speed modulation light emitting diode and a manufacturing method thereof. The light emitting diode comprises a light emitting diode chip comprising a light emitting epitaxial structure. The light emitting epitaxial structure comprises a buffering layer, a first N-type gallium nitride contact layer, a gallium nitride depletion layer, a P-type aluminum gallium nitride electronic barrier layer, a first P-type indium gallium nitrogen layer, a quantum well layer, a second P-type indium gallium nitrogen layer, an N-type gallium nitride layer, a second N-type gallium nitride contact layer and a conductive layer. The quantum well layer is one of an undoped In<0.2>Ga<0.8>N / In<0.05>Ga<0.95>N quantum well layer and an indium gallium nitrogen / gallium nitride quantum well layer of a silicon doping barrier whose deposition quardi-period condensation is 5*1017 cm<-3>. The invention also provides a manufacturing method of the high-speed modulation light emitting diode. According to the invention, while the high-speed modulation light emitting diode is kept with light outputting power similar to that of a traditional light emitting diode, modulation width is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a high-speed modulation light-emitting diode and a manufacturing method thereof. Background technique [0002] Semiconductor lighting, also known as solid-state lighting, refers to lighting using solid-state light-emitting devices as light sources, including light-emitting diodes (Light Emitting Diode, LED) and organic light-emitting diodes (Organic Light-Emitting Diode, OLED). In recent years, the semiconductor lighting technology known as "green lighting" has developed rapidly. Compared with traditional lighting sources, LED not only has low power consumption, long service life, small size, green environmental protection, but also has the advantages of good modulation performance and high response sensitivity. . Utilizing this feature of the LED, it can be used as lighting, and at the same time, the signal can be modulated onto the visible light beam of the...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the technical problem that the above-mentioned heterojunction bipolar transistor has a low upper limit frequency and cannot meet the needs of visible light communication, the present invention provides a high-speed modulation light-emitting diode based on the HBT structure and its manufacturing method. At the same time as the similar output power, the modulation width of the light emitting device is greatly improved

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