The invention discloses a sputtering method for a sull. According to the invention, ozone is inlet into a reaction chamber of a physical vapor deposition device directly to be used as sputtering gases to conduct sull deposition; the flow rate of the ozone inlet into the reaction chamber makes up 0.1%-50% of total flow of the gases used by sputtering; the physical vapor deposition device is any one of devices of direct current sputtering, radio-frequency sputtering, mid-frequency sputtering, alternating current sputtering or impulsing direct current sputtering, and adopts a single-target direct sputtering manner or a multi-target co-sputtering manner; the ozone is prepared by any one of manners of a corona discharge method, an ultraviolet radiation method, or an electrolytic method through an ozonizer; therefore, the method is suitable for the preparation of a metal-oxide semiconductor film, a metal-oxide transparent conducting thin film, and a metal-oxide dielectric film. Through the adoption of the method, the oxide semiconductor film with low oxygen vacancy content, the oxide transparent conducting thin film with high transparency and low resistance, and the oxide dielectric film with large process window and good pressure resistant property can be prepared.