91results about How to "Good pressure characteristics" patented technology

In order to realize a higher reliability TFT and a high reliability semiconductor device, an NTFT of the present invention has a channel forming region, n-type first, second, and third impurity regions in a semiconductor layer. The second impurity region is a low concentration impurity region that overlaps a tapered potion of a gate electrode with a gate insulating film interposed therebetween, and the impurity concentration of the second impurity region increases gradually from the channel forming region to the first impurity region. And, the third impurity region is a low concentration impurity region that does not overlap the gate electrode.Moreover, a plurality of NTFTs on the same substrate should have different second impurity region lengths, respectively, according to difference of the operating voltages. That is, when the operating voltage of the second TFT is higher than the operating voltage of the first TFT, the length of the second impurity region is longer on the second TFT than on the first TFT.

On a surface of a glass cloth adhered a mica layer sheet, a mixture of inorganic particles having a thermal conductivity of at least 5 W / mK, a resin, and a solvent is applied to form a layer of the mixture of the inorganic particles, the resin, and the solvent; the layer of the mixture is reduced in thickness using a doctor blade, followed by pressurizing to form a high thermally conducting layer; the mica layer sheet on which the high thermally conducting layer is disposed is cut to obtain a mica insulating tape; and the mica insulation tape is wound around a coil conductor. As a result, an insulated coil that is excellent in the voltage endurance characteristics and has a high thermal conductivity is manufactured.

A solid electrolytic capacitor employing a conductive polymer has a solid electrolyte layer with a laminated structure where a second conductive polymer layer complexed with an ionic polymer is stacked on a first conductive polymer layer composed of polyaniline or a derivative thereof. By achieving a solid electrolyte layer having an excellent self-healing property, a solid electrolytic capacitor having an excellent withstand voltage characteristic can be provided.

A whole oil tank structure of an airplane comprises a plurality of oil tank inner containers made of composite materials, a front beam, a rear beam, an upper wall board and a lower wall board; the oil tank inner containers are arranged between the upper wall board and the lower wall board; the front beam and the rear beam are connected with the front edges and rear edges of the upper wall board and the lower wall board respectively; adjacent walls among the oil tank inner containers are bonded to structural ribs of a wing; the oil tank inner containers are sealed containers prefabricated through composite materials; and the outer walls of the oil tank inner containers are in bonding curing with the adjacent upper wall board, the lower wall board, the front beam and the rear beam.

An object of the present invention is to provide a thin biaxially oriented film excellent in dimensional stability against humidity change, as well as a magnetic recording medium and a film capacitor using the same. The present invention provides a single layered or laminated biaxially oriented film comprising an aromatic polyester (a) and a polyolefin (b) having a melting point of from 230 to 280° C., wherein the ratio of the polyolefin (b) is from 2 to 60% based on the entire weight of the film, and the film thickness is from 1 to 10 μm.

A cable for a high-voltage electronic device having a small diameter and an excellent voltage resistance characteristic. The cable includes an inner semiconducting layer, a high-voltage insulator, an outer semiconducting layer, a shielding layer, and a sheath on an outer periphery of a cable core portion, wherein the high-voltage insulator is formed of an insulating composition containing 0.5 to 5 parts by mass of an inorganic filler with respect to 100 parts by mass of an olefin-based polymer, and the inorganic filler has an average dispersed-particle diameter of 1 μm or less.

A thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor layer, and a gate insulating layer for insulating the source electrode and the drain electrode from the gate electrode, wherein the gate insulating layer includes composite particles in which a hydrophobic compound is provided on the surfaces of insulating inorganic particles.

Provided is an improved cooler-integrated semiconductor module.A semiconductor module (100) includes a plurality of cooling plates (12), and a plurality of flat-plate semiconductor packages (5) and flat-plate device packages (2). The semiconductor packages (5) each include a semiconductor element housed therein. The device packages (2) each include an electronic component housed therein, the electronic component being different in type from the semiconductor element housed in the semiconductor elements. The cooling plates (12) are laminated alternately with the semiconductor packages (5) or the device packages (2). Connecting tubes (13a, 13b) having refrigerant flowing therein are provided between the cooling plates (12) adjacent to each other.

The invention discloses a method for preventing the short-circuit failure of a high-voltage aluminum-electrolyzing capacitor for a switching power supply, which comprises an optimizing step for an aging working procedure and a step for improving the flash-fire voltage of an electrolyte, wherein the optimizing step for the aging working procedure comprises the following substeps of: in the aging process of a product, aging by adopting a segmented voltage-raising mode, prolonging the aging time step by step after entering a high-voltage stage, and raising the highest aging voltage to be 1.5 times of the working voltage of the capacitor to improve the strength of continuously restoring a dielectric film by the electrolyte; and the step for improving the flash-fire voltage of the electrolyte comprises the following substeps of: adopting a non-water-system electrolyte to decrease the concentration of hydroxyl ions and reduce the generation of oxygen-ion discharge. By optimizing an aging process, the insulating performance of the dielectric film is improved, and the pressure-resisting characteristic of the product is improved; by optimizing electrolyte components, the flash-fire voltage of the electrolyte is improved, and flash-fire breakdown is prevented from occurring when the voltage is excessive; and by optimizing electrolytic paper, the short circuit of the product due to the breakage of the electrolytic paper is prevented.

There is provided a dielectric composition, including: a base powder including BamTiO3, where 0.995≦m≦1.010; a first subcomponent including 0.1 to 1.0 at % (x) of an oxide or carbonate containing at least one variable-valence acceptor element based on 100 moles of the base powder; a second subcomponent including 0.01 to 3.0 at % (y) of an oxide or carbonate containing at least one fixed valence acceptor element; a third subcomponent including an oxide or carbonate containing cerium (z) at % and at least one other rare-earth element (w) at %, where 0.01≦z≦x+4y and 0.01≦z+w≦x+4y; a fourth subcomponent including at least one of an oxide or carbonate containing at least one of Barium, Calcium, Aluminum, and Silicon and glass containing silicon; and a fifth subcomponent including 0.01 to 10.0 at % of an oxide containing zirconium.

A metal composite substrate includes a core made of a metal having higher strength than aluminum at elevated temperatures of at least 300° C. and an aluminum or aluminum alloy layer covering an entire surface of the core, and an anodized film is formed at a surface of the aluminum or aluminum alloy layer. The metal composite substrate having the anodized surface film can produce with high efficiency an insulating flexible support by a roll-to-roll process and has good flatness during the high-temperature heat treatment.

An alumina compound sintered compact, having a principal component of alumina, a method of manufacturing the same, and a spark plug employing such an alumina compound sintered compact are disclosed. The alumina compound sintered compact contains alumina, mullite, zircon, zirconia and a specified metal oxide composed of an oxide of at least one element selected from Group III elements excepting Mg, Ca, Sr, Ba and actinoid, wherein the alumina compound sintered compact contains 0.5 to 10 total parts by weight of mullite, zircon and zirconia, 0.5 to 10 parts by weight of the specified metal oxide and a balance of substantially alumina based on 100 parts by weight in total. The spark plug for an internal combustion engine includes a porcelain insulator made of the alumina compound sintered compact.

A cable for high-voltage electronic devices including an inner semiconductive layer, a high-voltage insulator, an outer semiconductive layer, a shielding layer, and a sheath which are provided on an outer periphery of a cable core part in the order mentioned, wherein the high-voltage insulator is made of an insulating composition whose temperature dependence parameter DR found by the following expression is 1.0 or less: DR=log R23° C.−log R90° C. (where R23° C. is volume resistivity (Ω·cm) at 23° C. and R90° C. is volume resistivity (Ω·cm) at 90° C.). The cable for high-voltage electronic devices is small in diameter and has an excellent withstand voltage characteristic.

NTFT of the present invention has a channel forming region, n-type first, second, and third impurity regions in a semiconductor layer. The second impurity region is a low concentration impurity region that overlaps a tapered potion of a gate electrode with a gate insulating film interposed therebetween, and the impurity concentration of the second impurity region increases gradually from the channel forming region to the first impurity region. And, the third impurity region is a low concentration impurity region that does not overlap the gate electrode. Moreover, a plurality of NTFTs on the same substrate have different second impurity region lengths, respectively, according to difference of the operating voltages. That is, when the operating voltage of the second TFT is higher than the operating voltage of the first TFT, the length of the second impurity region is longer on the second TFT than on the first TFT.

A polyolefin microporous membrane is disclosed. The polyolefin microporous membrane includes a polyolefin resin, where the polyolefin resin contains at least 80 mass % polypropylene resin, and where the polyolefin microporous membrane has a maximum pore size of less than 30.0 nm and a mean flow pore size of less than 20.0 nm.

The invention discloses an electric adjustable ceramic material of barium zirconate titanate of doped modified rare earth oxide as well as making method, whose molecular formula is Ba1-xMx (Ti1-y-0.25xZry) O3, wherein N is rare earth element; x is between 0.001 and 0.05; y is 0.1-0.5.

The invention discloses a polypropylene composition. The polypropylene composition includes an ethylene-propylene random elastic copolymer composition composed of an ethylene-propylene random copolymer with a melt index of 0.5 to 5 g / 10 min and 0.5 to 10 wt% of ethylene and an ethylene-propylene elastic polymer with 25 to 75 wt% of ethylene and further includes a beta-crystal generating agent. The polypropylene composition has the characteristics of excellent impact resistance and overpressure resistance and is applicable to preparation of pipelines with the characteristics of improved flexibility, impact resistance at low temperature and overpressure resistance at high temperature.

The semiconductor device includes a GaN-based layered body having an opening and including an n-type drift layer and a p-type layer located on the n-type drift layer, a regrown layer including a channel and located so as to cover the opening, and a gate electrode located on the regrown layer and formed along the regrown layer, wherein the opening reaches the n-type drift layer, and an edge of the gate electrode is not located outside a region of the p-type layer when viewed in plan.

The invention discloses a gallium oxide based hybrid PiN Schottky diode and a preparation method thereof, and relates to the technical field of semiconductor devices. The P-type gallium oxide in the prior art is very difficult to dope, and a sufficiently high doping concentration cannot be achieved in the prior art such that the diode in the prior art cannot adapt to a normal device. A diode of ahybrid PiN Schottky structure achieved by using a method of inserting a p-type oxide semiconductor layer into the surface of a gallium oxide voltage-resistant layer is provided. The method ingeniouslyavoids the p-type doping of a gallium oxide material. The reverse breakdown voltage and leakage current of the diode are both determined by a heterogeneous PN junction. Thus, a good voltage withstandcharacteristic is achieved while a good forward turn-on characteristic is achieved.

The invention discloses a barium zirconate titanate-barium calciate titanate (BZT-BCT) ceramic modified by the doping of lanthanum oxide and a preparation method for the same. The molecular formula of the BZT-BCT ceramic is Ba<1-x>LaxCa0.075(Zr0.9Ti0.1)<1-x / 4>O3, wherein x is not less than 0.01 and not greater than 0.1; the preparation method for the BZT-BCT ceramic comprises the following steps of: proportioning analytically pure barium carbonate, calcium carbonate, zirconium oxide, titanium oxide and lanthanum oxide in a stoichiometric ratio of Ba<1-x>LaxCa0.075(Zr0.9Ti0.1)<1-x / 4>O3, wherein x is not less than 0.01 and not greater than 0.1; and performing the working procedures of dissolving, preparing a sol, preparing a gel, drying, calcining, sintering etc. A large extent of adjustment for Curie temperature range and improvement for dielectric properties can be realized by adjustment for the doping amount of lanthanum oxide and Zr / Ti ratio. The ceramic prepared by the method disclosed by the invention has better voltage endurance, more excellent temperature stability in paraelectric phase, low dielectric loss of about 0.004, high dielectric constant of greater than 3000 and high tuning rate.

The invention discloses a heat-sensitive coating material, a heat-sensitive diaphragm and a preparation method and application of the heat-sensitive diaphragm. The heat-sensitive coating material comprises the following components in percentage by mass: 3%-10% of a polymer binder, 80%-90% of inorganic metal oxide, 0.5%-1% of a dispersing agent and 5%-15% of thermal expansion polymer microspheres.The heat-sensitive coating material provided by the invention comprises a polymer binder, an inorganic metal oxide, a dispersing agent and thermal expansion polymer microspheres. The thermal sensitivediaphragm prepared from the thermal sensitive coating material enables the battery to have high safety performance in the overcharging process, and has good structural stability.

A thin film device includes a thin film element disposed on a surface of a substrate for high voltage formed of a material having an electric resistivity in the range of 108Ω·cm to 1010Ω·cm, with an adhesive layer in between. The substrate for high voltage is a sintered body containing Al2O3, TiC, and MgO in a predetermined weight ratio. Therefore, if electric charges are generated in the thin film element, the electric charges are, while they are not accumulated in large amounts, gradually shifted via the adhesive layer to the substrate for high voltage, so that the generation of ESD can be suppressed. On the other hand, even when mounted on a lead frame, a sufficient dielectric breakdown voltage can be ensured. This provides a thin film device that is less susceptible to damage due to ESD, and has superior withstand voltage characteristic to permit a stable operation.

A semiconductor device has a semiconductor base, an anode electrode, and a cathode electrode. The semiconductor base includes a P type semiconductor substrate, an insulating film, an N− type semiconductor region formed on the insulating film, an N+ type semiconductor region, and a P+ type semiconductor region facing the N+ type semiconductor region via the N− type semiconductor region. The semiconductor device further has an N type diffusion layer which is formed, in the N− type semiconductor region at the interface between the insulating film and the N− type semiconductor region, so as to have a concentration gradient such that the N type impurity concentration increases from the side of the anode electrode to the side of the cathode electrode.

The invention discloses a sputtering method for a sull. According to the invention, ozone is inlet into a reaction chamber of a physical vapor deposition device directly to be used as sputtering gases to conduct sull deposition; the flow rate of the ozone inlet into the reaction chamber makes up 0.1%-50% of total flow of the gases used by sputtering; the physical vapor deposition device is any one of devices of direct current sputtering, radio-frequency sputtering, mid-frequency sputtering, alternating current sputtering or impulsing direct current sputtering, and adopts a single-target direct sputtering manner or a multi-target co-sputtering manner; the ozone is prepared by any one of manners of a corona discharge method, an ultraviolet radiation method, or an electrolytic method through an ozonizer; therefore, the method is suitable for the preparation of a metal-oxide semiconductor film, a metal-oxide transparent conducting thin film, and a metal-oxide dielectric film. Through the adoption of the method, the oxide semiconductor film with low oxygen vacancy content, the oxide transparent conducting thin film with high transparency and low resistance, and the oxide dielectric film with large process window and good pressure resistant property can be prepared.

A substrate for a solar cell, containing a metal substrate and an insulating anodic oxidation film provided on the metal substrate, wherein the thickness TO of the anodic oxidation film and the thickness TB of a barrier layer of the anodic oxidation film are inside a region I surrounded by the point A (TO=0.01 μm, TB=0.01 μm), the point B (TO=2 μm, TB=2 μm), the point C (TO=100 μm, TB=2 μm) and the point D (TO=100 μM, TB=0.01 μm) shown in FIG. 1 (provided that the region includes its boundary lines); and a solar cell using the same.

The invention provides an in-situ Raman observation high-pressure kettle. The in-situ Raman observation high-pressure kettle comprises a high-pressure kettle body (1), an observation pore channel (2), a window (3), a test sample holder (9) and a lens (7), wherein a kettle cavity (S) is limited by the high-pressure kettle body (1); one end of the observation pore channel (2) is arranged on a side wall of the high-pressure kettle body (1), is communicated with the high-pressure kettle body (1) and is used for leading in and leading out Raman laser; the window (3) is arranged at the other end of the observation pore channel (2) and is in sealing connection with the observation pore channel (2); the test sample holder (9) is arranged in the high-pressure kettle body (1); the lens (7) and the observation pore channel (2) are coaxially arranged in the high-pressure kettle body (1). The invention provides the in-situ Raman observation high-pressure kettle which is safe and reliable and can be used for carrying out long-period and continuous in-situ Raman measurement.

The invention provides a broadband transducer and a preparation method thereof. The broadband transducer comprises a potting material (1), a piezoelectric material (2), a filling material (3), a backing material (4), a transducer base (5) and a cable (6), the piezoelectric material (2) comprises an array columns arranged on the bottom surface and the bottom surface, the filling material (3) fillsthe space between the array columns of the piezoelectric materials(2), the bottom surface of the piezoelectric material (2) serves as a radiating surface, the radiating surface of the piezoelectric material (2) is arranged on the backing material (4) outwards, the backing material (4) is connected with the transducer base (5), the cable (6) is connected with a positive electrode and a negative electrode of the piezoelectric material (2), the potting material (1) is used for encapsulating the connected piezoelectric material (2), the filling material (3), the backing material (4) and the transducer base (5). According to the method, the mode that the piezoelectric material is used for cutting and reserving the bottom is adopted, the bottom surface serves as the radiating surface, the effective radiation resistance of the transducer is increased, and the bandwidth and the receiving sensitivity of the transducer are improved.

A method for forming a phosphor screen comprising the step of forming a phosphor layer containing a thermoplastic resin on the inner surface of a face plate, the step of pressurizing the phosphor layer being heated to plasticate the thermoplastic resin and smooth the surface of the phosphor layer, and the step of forming a metal film on the surface-smoothed phosphor layer and heating the face plate. Thermoplastic resin having a softening temperature of 50-350° C. can be used in the phosphor layer, and 0.05-50 wt % of such a thermoplastic resin in solid content ratio is contained in the layer. Heating / pressurizing conditions preferably involve temperatures of 50-350° C. and pressures of 10-10000 N / cm<2>. This method enhances the film forming property of a metal back layer and prevents cracks and pinholes in the metal back layer.

The invention relates to a pressure-resistant type underwater sound cylindrical transducer array. The pressure-resistant type underwater sound cylindrical transducer array comprises an upper cover housing, a cylindrical part and a lower cover housing, the upper cover housing and the lower cover housing are respectively and fixedly connected to the upper end and the lower end of the cylindrical part, the cylindrical part comprises an aluminum inner cylinder, an array rack, a rubber outer wall and a plurality of transducer array elements, the array rack is an annular cylinder, the array rack isprovided with a plurality of installing holes matched with the transducer array elements, the plurality of transducer array elements are respectively arranged in the installing holes, and the array rack is arranged between the aluminum inner cylinder and the rubber outer wall in a sealed manner. According to the technical scheme, the plurality of transducer array elements form a cylindrical transducer array, the cylindrical transducer array has high pressure resistance and small fluctuation of sound pressure in a horizontal wave beam, and the technical problem that the detection effect of a cylindrical sonar is influenced due to poor pressure resistance and large fluctuation of the directivity of the horizontal wave beam of the conventional cylindrical array transducer is solved.