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42results about How to "Increase insulation thickness" patented technology

Test method for unshaded corona onset voltage of medium-voltage crosslinked polyethylene cable

The invention relates to a test method for an unshaded corona onset voltage of a medium-voltage crosslinked polyethylene cable. The test method is characterized by comprising the following steps: taking a medium-voltage crosslinked polyethylene unshaded cable head without an insulating jacket tube as a tested main body; in a darkroom, using a power frequency alternating current voltage-resisting device frequently used in the present power system as a test device; performing an alternating current voltage-resisting test on the tested cable head; and in the alternating current voltage-resisting test, observing and recording a test voltage value at the corona starting moment of a cut port of a semi-conductive layer of the cable head, thereby obtaining a corona onset voltage value of the cable. According to the test method provided by the invention, the internal defect and insulation detect of the cable head can be detected and treated in advance; especially, before the cable is used, the insulation detect of the new medium-voltage crosslinked polyethylene cable head is detected as early as possible; the cable accidents are eliminated before the running of the cable; the work reliability of the medium-voltage crosslinked polyethylene cable is increased, so that the medium-voltage crosslinked polyethylene cable accidents are reduced or eliminated; and the power supply reliability of the power system and the power-utilization reliability of the cable users are increased.
Owner:甘肃省电力公司刘家峡水电厂 +1

Semiconductor devices and methods of manufacturing the same

ActiveUS20170263723A1Sufficient process marginIncreasing thickness of insulationSemiconductor devicesSemiconductorDevice material
A semiconductor device may include a linear gate trench that crosses an active region of a substrate of the semiconductor device. The active region may include a plurality of gate areas at a bottom of the gate trench and junction areas at a surface of the substrate in a central portion and opposite end portions of the active region. A conductive line may be in a lower portion of the gate trench. The conductive line may include a gate line and a capping layer that at least partially isolates the gate line from an upper surface of the conductive line. A sealing line may be in an upper portion of the gate trench. The sealing line may cover the conductive line and a surface of the sealing line may be coplanar with the junction areas.
Owner:SAMSUNG ELECTRONICS CO LTD

Memory

A memory includes: a semiconductor substrate (1), a doped source area (2) and a doped drain area (3) set in the semiconductor substrate (1), and a channel area (4) set between said doped source area (2) and said doped drain area (3); a first insulating layer (5) located on the semiconductor substrate (1), a charge memory layer (6) composed of polysilicon located on said first insulating layer (5); an SiGe conducting layer (7) set in said charge memory layer (6).
Owner:GRACE SEMICON MFG CORP

Flat-bottom guide cylinder of czochralski silicon single crystal furnace

The invention provides a flat-bottom guide cylinder of a czochralski silicon single crystal furnace. The guide cylinder comprises a guide cylinder side wall part, a guide cylinder transition part anda guide cylinder flat bottom part, wherein the guide cylinder side wall part, the guide cylinder transition part and the guide cylinder flat bottom part are sequentially connected; the guide cylinderside wall part, the guide cylinder transition part and the guide cylinder flat bottom part are of annular structures, the diameter of the guide cylinder flat bottom part is smaller than that of the guide cylinder side wall part, and the guide cylinder flat bottom part and the guide cylinder side wall part are coaxially arranged, so that a gap between the liquid level of a silicon solution and theguide cylinder is reduced. The flat-bottom guide cylinder is provided with the guide cylinder flat bottom, so that the gap drop between the guide cylinder and the liquid level is small, the gas flow rate is increased, volatilized oxygen can be rapidly taken away, the oxygen content of large-size single crystals can be effectively reduced, and the quality of the large-size single crystals is improved.
Owner:INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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