Gallium oxide based hybrid PiN Schottky diode and preparation method thereof
A Schottky diode, gallium oxide technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low breakdown voltage, inapplicability, poor temperature characteristics of Schottky barrier diodes, etc. The effect of good pressure resistance
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[0022] Such as Figure 1-3 As shown, a cathode electrode 101, an n-type doped gallium oxide substrate 102, a gallium oxide withstand voltage layer 103, and a p-type oxide semiconductor layer are sequentially stacked in a gallium oxide-based mixed PiN Schottky diode according to the present invention. 104 and the anode layer, the side of the gallium oxide withstand voltage layer 103 close to the p-type oxide semiconductor layer 104 is provided with a number of steps extending through the p-type oxide semiconductor layer 104, and the steps penetrate the p-type oxide semiconductor layer Layer 104 is then in contact with the anode layer; the step between the anode layer and the gallium oxide withstand voltage layer 103 is a Schottky contact; the anode layer and the p-type oxide semiconductor layer 104 are Schottky or ohmic touch. The n-type doped gallium oxide substrate 102 and the cathode electrode 101 are in ohmic contact. The anode layer includes a first anode electrode 105 a...
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