A gallium oxide-based mixed pin Schottky diode and its preparation method
A technology of Schottky diodes and gallium oxide, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as low breakdown voltage, inapplicability, and poor temperature characteristics of Schottky barrier diodes. To achieve the effect of good pressure resistance characteristics
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[0022] Such as Figure 1-3 As shown, a cathode electrode 101, an n-type doped gallium oxide substrate 102, a gallium oxide withstand voltage layer 103, and a p-type oxide semiconductor layer are sequentially stacked in a gallium oxide-based mixed PiN Schottky diode according to the present invention. 104 and the anode layer, the side of the gallium oxide withstand voltage layer 103 close to the p-type oxide semiconductor layer 104 is provided with a number of steps extending through the p-type oxide semiconductor layer 104, and the steps penetrate the p-type oxide semiconductor layer Layer 104 is then in contact with the anode layer; the step between the anode layer and the gallium oxide withstand voltage layer 103 is a Schottky contact; the anode layer and the p-type oxide semiconductor layer 104 are Schottky or ohmic touch. The n-type doped gallium oxide substrate 102 and the cathode electrode 101 are in ohmic contact. The anode layer includes a first anode electrode 105 a...
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