63results about How to "Good light absorption properties" patented technology

An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode and including a first compound represented by Chemical Formula 1 or 2, and a ratio between a FWHM of a light absorption curve depending on a wavelength of the first compound in a solution state and in a thin film state satisfies the following Relationship Equation 1: FWHM2 / FWHM1<2.5. In the Relationship Equation 1, FWHM1 is a FWHM of the light absorption curve depending on a wavelength in a solution state, and FWHM2 is a FWHM of the light absorption curve depending on a wavelength in a thin film state.

A semiconductor photodiode device includes a semiconductor substrate, a first buffer layer containing a material different from that of the semiconductor substrate in a portion thereof, a first semiconductor layer formed above the buffer layer and having a lattice constant different from that of the semiconductor substrate, a second buffer layer formed above the first semiconductor layer and containing an element identical with that of the first semiconductor layer in a portion thereof, and a second semiconductor layer formed above the buffer layer in which a portion of the first semiconductor layer is formed of a plurality of island shape portions each surrounded with an insulating film, and the second buffer layer allows adjacent islands of the first semiconductor layer to coalesce with each other and is in contact with the insulating film.

A low reflectivity coating (40, 80 / 82) is provided on a substrate (22). The coating includes a layer of substantially vertically aligned carbon nanotubes (40) on an exposed surface (21) of the substrate. Provided on and extending partially within the carbon nanotube layer (40) is a hydrophobic coating (80, 82), in the preferred embodiment of or containing fluorocarbon. The hydrophobic coating (80, 82) prevents any settling or ingress of water particles onto or into the carbon nanotube layer (40) and as a result increases the stability of the carbon nanotube layer during use (40) while improving the low reflectivity of the film.

The invention discloses a method for preparing a perovskite thin film based on magnetic field control, and belongs to the technical field of solar cells. The main steps include: through a film-forming process that is easy to realize industrialization, lead(II) iodide, PbI 2 ) and methylamine iodine (CH 3 NH 3 In the mixed solution of I), a rotating magnetic field of a certain frequency and intensity is introduced during the preparation process, and then heat-treated to obtain a dense, smooth, and uniform perovskite crystal film. The method of the present invention can also prepare smooth and dense perovskite films without using vacuum equipment, glove boxes, etc., and has the advantages of low cost and large-area preparation. The perovskite crystal thin film obtained by this method is used as a light-absorbing material in thin-film solar cells, and the prepared cell device has high efficiency and good stability, which is very important for realizing low-cost preparation and industrialization of high-efficiency perovskite solar cells of great value.

The invention belongs to the fields of micro-nano manufacturing and a photoelectronic device, and discloses a dual-wave-band thin film optical detector. The dual-wave-band thin film optical detector comprises a substrate slice, a first electrode layer, a first WSe<2> layer, a graphene layer, a first MoS<2> layer, a second electrode layer, a dielectric layer, a second WSe<2> layer, a third electrode layer, a second MoS<2> layer and a fourth electrode layer, wherein the first electrode layer is arranged on the substrate slice; the first WSe<2> layer is paved on the substrate slice and the first electrode layer; the graphene layer is arranged on the first WSe<2> layer; the first MoS<2> layer is arranged on the graphene layer; the second electrode layer is arranged on the first MoS<2> layer; the dielectric layer is paved on the first MoS<2> layer and the second electrode layer; the second WSe<2> layer is arranged on the dielectric layer; the third electrode layer and the second MoS<2> layer are arranged on the second WSe<2> layer; and the fourth electrode layer is arranged on the second MoS<2> layer. The current carrier adopted by the dual-wave-band thin film optical detector is high in mobility, so that the dual-wave-band thin film optical detector is high in optical absorption characteristic in the visible light wave band.