56results about How to "Avoid the risk of breakdown" patented technology

The invention provides a multilevel BOOST device, by setting N voltage dividing modules to realize voltage distribution among N first switches, overvoltage of the second to Nth first switches can be avoided and breakdown failure can be avoided. And by subjecting it to the common point between the 1 and the i-th second switch is set to the i-th. 1 clamp branch, so that the voltage applied to the ith second switch is clamped on the difference between the voltage across the fourth branch (i.e., the output voltage of the multilevel BOOST device) and the voltage across the corresponding clamping branch, thereby avoiding the risk of overvoltage breakdown of the second to Nth second switches at the power-on moment when the input voltage is low.

A dual-channel electrostatic discharge protecting circuit based on RC-triggering is composed of a delay generation unit, a substrate trigger unit, a low-voltage grid trigger unit and an electrostaticdischarger. When positive electrostatic discharge occurs on a power supply, the delay generation unit in the protecting circuit can generate a delay pulse to respectively drive the substrate trigger unit and the low-voltage grid trigger unit, and the combined action of the substrate trigger unit and the low-voltage grid trigger unit reduces the threshold voltage of the electrostatic discharger, improves the opening speed of the electrostatic discharger and enhances the positive discharge performance of the electrostatic discharger; when negative electrostatic discharge occurs on a power line,a parasitic inverse diode between a source electrode in short circuit with the electrostatic discharger and a substrate and a drain electrode is mainly used for electric discharge to realize better negative static voltage protection; and the design circuit in the invention keeps closed in the case of normal power-on of the power supply and normal operation of a chip.

The invention describes a TFT, a TFT array substrate and a manufacturing method thereof, a display panel and a display apparatus. The TFT comprises a gate electrode, a gate electrode insulating layer arranged on the gate electrode, a semiconductor active layer arranged on the gate electrode insulating layer, an etching barrier layer arranged on the semiconductor active layer, and a source electrode and a drain electrode both arranged on the semiconductor active layer. Both the source electrode and the drain electrode do not cover the edges of the semiconductor active layer. When formed, the source electrode and the drain electrode are not connected with the semiconductor active layer; then an insulating film is used to pave the edges of the semiconductor active layer; and then the source electrode and the drain electrode are connected to the semiconductor active layer by means of a transparent conductive layer. Therefore, the discharge breakdown risk of metal of the source electrode and the drain electrode to the gate electrode caused by over-etching of the etching resisting layer is avoided. Besides, one more insulating film between the source and the drain electrodes and gate lines reduces the parasitic capacitance.

The invention relates to a nano water ion generating device, which comprises a semiconductor crystal grain pair consisting of a P-type semiconductor and an N-type semiconductor. One end of the semiconductor crystal grain pair is a refrigerating end, and the other end of the semiconductor crystal grain pair is a radiating end. The nano water ion generating device also comprises a water condensationdisc, a discharge electrode and a constant voltage electrode; the water condensation disc is electrically connected with the refrigerating end of the semiconductor crystal grain pair; one end of thedischarge electrode is a water absorption end, the water absorption end is close to the water condensation disc, and the other end of the discharge electrode is a discharge end; and the constant voltage electrode is arranged on the side part of the discharge electrode. The nano water ion generating device can be applied to the fields of air purification, sterilization, cosmetology and hairdressing, moisture preservation, fresh keeping and the like.

The invention relates to a gear burr removing technology. The technology comprises the following specific steps that 1, a burr removing device is constructed; 2, a gear is placed; 3, conducting and discharging are carried out; 4, an electrolyte is sprayed; 5, the gear is washed ultrasonically; 6, antirust treatment is carried out; and 7, the gear is naturally dried in air and delivered from storage. The technology has the following advantages that an anode terminal and a cathode terminal are utilized for conducting and discharging, the electrolyte is sprayed to the gear fast from bottom to top, the spraying speed is high, the electrolyte is sprayed in a centralized manner, and the burr removing effect is achieved; meanwhile, the burr removing effect is remarkable, the risk that the gear isbroken down is avoided, time for burr removing is short, and efficiency is high; the concentration of sodium nitrate is low, harm to the human body is avoided, corrosion to the surface of the gear isavoided, and meanwhile, the good burr removing effect can be ensured; and as the electrolyte spraying speed is high and the flow amount is large, the complex washing step in the later period is omitted, the gear only needs to be washed with clear water, the gear is washed ultrasonically, and thus greasy dirt on the surface of the gear can be decomposed and emulsified.

The invention discloses a printing ink motion controllable electrowetting display and a preparation method thereof. The printing ink motion controllable electrowetting display comprises a conducting layer, an insulating layer and a pixel wall, wherein the insulating layer is arranged on the upper surface of the conducting layer; the pixel wall is arranged on the upper surface of the insulating layer; the insulating layer is a double-layer insulating layer; the double-layer insulating layer includes a hydrophilic insulating layer and a hydrophobic insulating layer; the hydrophilic insulating layer fully covers the upper surface of the conducting layer; the hydrophobic insulating layer covers the upper surface of the hydrophilic insulating layer; in a pixel grid, the hydrophobic insulating layer exposes part of the upper surface of the hydrophilic insulating layer; the thickness of the printing ink decreases progressively from one side of the hydrophobic insulating layer to one side of the hydrophilic insulating layer; and after the voltage is applied, the printing ink is cracked at the most thin part, and contracts from one side of the hydrophilic insulating layer to one side of the hydrophobic insulating layer so that effective control of the cracked position of the printing ink and the printing ink motion contraction direction when an electrowetting display pixel unit is powered up.

The invention provides a data collecting card based on USB bus. The data collecting card comprises a signal conditioning module, an A / D (Analog / Digital) conversion module, and a USB control module which are connected in order; the USB control module is communicated with the signal conditioning module; the corona current is converted into a voltage signal by a non-inductive resistance sensor to transmit to the signal conditioning module of the corona current collecting card to perform the amplitude limiting, amplifying, filtering and isolating, and then transmit to the A / D conversion module to perform the data sampling and conversion, the converted signal is transmitted to the USB control module to control and store, and the stored information is transmitted to a computer. Through the A / D conversion module and the USB control module, the parameter collecting and storage of the corona current signal can be controlled. The collecting device can realize the reliable collection, safe storage and high-speed transmission of the corona current signal under the ultra-high voltage complex electromagnetic environment.

The invention relates to a novel nano water ion generation device. The novel nano water ion generation device comprises a semiconductor crystal grain pair, a water supply electrode, a constant voltageelectrode and a substrate, wherein the semiconductor crystal grain pair consists of a P-type semiconductor and an N-type semiconductor; one end of the semiconductor crystal grain pair is a refrigeration end, and the other end of the semiconductor crystal grain pair is a heat dissipation end; the water supply electrode comprises a water condensation disk and a water supply pin; the water condensation disk is arranged below the water supply pin; the water condensation disk is electrically connected with the refrigeration end of the semiconductor crystal grain pair; the constant voltage electrode is arranged at the side part of the water supply electrode; the substrate is electrically connected with the heat dissipation end of the semiconductor crystal grain pair; bilaterally symmetric conductor coatings are arranged on the upper and lower surfaces of the substrate; the conductor coatings are electrically connected; the conductor coating close to one side of the semiconductor crystal grain pair is electrically connected with the heat dissipation end of the semiconductor crystal grain pair; and the substrate is uniformly provided with a plurality of heat dissipation holes running through the conductor coatings. The novel nano water ion generation device can be applied to the fields of air purification, sterilization and disinfection, cosmetology and hairdressing, moisturizing andfreshness preservation and the like.

The invention relates to an automobile front end collision force transmission structure which comprises a front end frame, a cooling system radiator, a main longitudinal beam, a front tire tread, a main energy absorption box fixing support, an auxiliary energy absorption box, an auxiliary anti-collision cross beam, a main energy absorption box, a main anti-collision cross beam, a cross beam connecting plate, an auxiliary frame connecting support and a main longitudinal beam front end fixing support. The main energy absorption box, the main anti-collision cross beam, the auxiliary energy absorption box, the auxiliary anti-collision cross beam and the cross beam connecting plate can be connected to form a full-coverage first-stage collision energy absorption protection cage type structure; the front end frame, the cooling system radiator, the main longitudinal beam, the front tire tread, the main energy absorption box fixing support, the auxiliary frame connecting support and the main longitudinal beam front end fixing support can be connected to form a full-coverage secondary collision energy absorption protection cage type structure. According to the structure, the upper, middle and lower multi-path force transfer design realizes effective coverage of the MPDB working condition evaluation area force transfer structure and reasonable distribution of counterguard collision contact loads, thereby reducing MPDB working condition counterguard compatibility penalty scores and greatly improving the automobile collision compatibility protection capability.

The invention is suitable for the field of switch power supplies and provides an inductance element, a power factor correction circuit and a switch power supply. The inductance element comprises a magnetic core and a lead wound on the magnetic core; the magnetic core is an annular magnetic core; the lead is provided with a segmental point and divided into a first lead part and a second lead part by the segmental point; the segmental point of the lead is arranged at any point of the annular magnetic core; the first lead part of the lead is wound for the preset number of turns on one side of the annular magnetic core and then a first conductive pin is drawn out; the second lead part of the lead is wound for the preset number of turns on the other side of the annular magnetic core and then asecond conductive pin is drawn out. In the inductance element provided by the invention, the lead is wound for the preset number of turns on the annular magnetic core from the centre to two sides andthen the conductive pins are respectively drawn out, so that the power factor correction circuit using the inductance element does not generate noise spike, the risk of breaking down the switch tube is avoided, and the reliability and the stability of the power factor correction circuit are improved.

The invention discloses a variable-frequency oxygen sensor which comprises a heating layer, a second gas channel layer, a second solid electrolyte layer, a cavity layer, a first solid electrolyte layer, a first gas channel layer and a sensitive electrode pin layer which are sequentially stacked, a first common electrode is arranged between the cavity layer and the first solid electrolyte layer, a second common electrode is arranged between the cavity layer and the second solid electrolyte layer, an outer electrode is arranged between the first solid electrolyte layer and the first gas channel layer, an inner electrode is arranged between the second solid electrolyte layer and the second gas channel layer, and a heater is arranged between the heating layer and the second gas channel layer. The heater is used for heating the outer electrode, the first common electrode, the second common electrode and the inner electrode; the heating layer, the second gas channel layer, the first gas channel layer and the sensitive electrode pin layer are made of aluminum oxide ceramics, the second solid electrolyte layer, the chamber layer and the first solid electrolyte layer are made of zirconium oxide ceramics, and yttrium oxide or scandium oxide is doped in the zirconium oxide ceramics. The frequency conversion oxygen sensor is good in insulation effect and cannot be broken down.

The invention relates to a cache breakdown prevention method which comprises the following steps: an analysis step: analyzing a query request to obtain a key; a judgment step: judging whether data corresponding to the Key exists in the cache or not; a reading step: if the corresponding data of the Key exists in the cache, returning the corresponding data; and if not, locking the Key, executing a group of database read-write operations after successful locking, writing the results of the group of database read-write operations into the cache, removing the lock, and returning the results in thecache. Furthermore, the invention also relates to an annotation component for preventing cache breakdown, which comprises an analysis unit for analyzing the query request to obtain a key; a judging unit used for judging whether data corresponding to the Key exists in the cache or not; and a reading unit used for returning the corresponding data if the corresponding data of the Key exists in the cache; and if not, locking the Key, executing a group of database read-write operations after successful locking, writing the results of the group of database read-write operations into the cache, removing the lock, and returning the results in the cache.

The invention discloses an axial continuous shearing strain piezoelectric fiber composite material and a preparation method thereof. The axial continuous shearing strain piezoelectric fiber compositematerial is composed of multiple piezoelectric ceramic fibers, a high-molecular polymer and two flexible interdigital electrodes, and the piezoelectric fibers polarized in the thickness direction andthe high-molecular polymer are alternately arranged in parallel; and the flexible interdigital electrodes are compounded on the upper sides and the lower sides of the piezoelectric fibers and the high-molecular polymer, the upper flexible interdigital electrode and the lower flexible interdigital electrode are in mirror symmetry, the electrode finger parts of the flexible interdigital electrodes are perpendicular to the axial direction of the piezoelectric ceramic fibers, and the piezoelectric ceramic fibers are continuous in the axial direction. The axial continuous shearing strain piezoelectric fiber composite material has certain flexibility and is continuous in stress and strain in the axial direction of the piezoelectric ceramic fibers, the driving capacity of the piezoelectric fibercomposite material is enhanced, and a large bending strain exists in a shearing direction; in addition, the axial continuous shearing strain piezoelectric fiber composite material is prepared by adopting a cutting-filling method, a technological process is simple, cost is low, and product stability is good.

The invention provides a level conversion circuit which comprises a first voltage domain circuit and a second voltage domain circuit. The second voltage domain circuit converts an input signal of the first voltage domain circuit into an output signal of a second voltage domain. The input signal is switched between a first high level potential and a first low level potential, and the output signal is switched between a second high level potential and a second low level potential. The second voltage domain circuit includes a plurality of transistors forming an input unit, a control unit, and an output unit. And the control unit clamps the voltage domains of the input unit and the output unit in a preset range according to the first control voltage and the second control voltage so as to prevent the same type of transistors in the second voltage domain circuit from being broken down. The invention further provides an electronic device.

The invention discloses a magnetic response liquid crystal intelligent window. The window comprises two base plates which are oppositely arranged, wherein each substrate comprises a light-transmittingsubstrate and an orientation layer; the alignment layers of the two substrates are oppositely arranged, the space between the two substrates is filled with a liquid crystal mixture, the liquid crystal mixture comprises magnetic particles and main body liquid crystals, a patterned electrode is arranged between the light-transmitting substrate and the alignment layer of at least one substrate, andthe patterned electrode can generate a magnetic field when being electrified. Compared with a traditional electrically-driven intelligent window, the magnetic response intelligent window can be used under both direct current and alternating current; in addition, due to the fact that the mode that a power source is connected between the upper conducting layer and the lower conducting layer is not adopted, the danger of breakdown of the conducting layers is avoided, high voltage does not need to be connected to the intelligent window, good economy and safety are achieved, application scenes arericher, and good application prospects are achieved in the fields of vehicle window glass, household glass windows, glass curtain walls and the like.

The invention discloses a depletion-type transistor driving circuit and a chip. In the circuit, a drain electrode of a low-voltage MOS tube is connected with a source electrode of a main depletion-type transistor, and a source electrode of the low-voltage MOS tube is grounded; an indirect locking circuit is connected with the power supply end and the grid electrode of the low-voltage MOS tube andused for driving the low-voltage MOS tube to be opened and locking the low-voltage MOS tube to be in a normally open state after the main depletion-type transistor is opened for the first time; the direct drive circuit is connected with the power supply end, the grid electrode of the main depletion-type transistor and the source electrode of the low-voltage MOS transistor and used for directly driving the main depletion-type transistor to be turned on or turned off. The auxiliary driving circuit is connected with the power supply end, the direct driving circuit, the indirect locking circuit and the source electrode of the low-voltage MOS transistor and is used for driving the indirect locking circuit to lock the low-voltage MOS transistor to be in a normally open state; and after the powersupply end is powered off, the low-voltage MOS transistor is driven to be closed, and the direct drive circuit is controlled to close the main depletion-type transistor. The circuit can improve the switching speed of the low-voltage MOS transistor and guarantee the high-speed switching characteristic of the main depletion-type transistor.

The invention discloses a cable and a wire core wiring method thereof. The method comprises the following steps of: inserting wire cores of two sections of cables into a connecting pipe; wherein the connecting pipe is made of a metal material, and the section of the connecting pipe is polygonal; extruding the connecting pipe from outside to inside along the radial direction by using a crimping die so as to enable the connecting pipe to be in interference fit with the wire cores of the two sections of cables; wherein the crimping die comprises an upper die and a lower die, the upper die is provided with a first crimping surface with a downward opening, the lower die is provided with a second crimping surface with an upward opening, the first crimping surface and the second crimping surface are arc-shaped, and the first crimping surface and the second crimping surface are used for jointly extruding the connecting pipe. As the surface of the crimping die is in the smooth arc shape, burrs and pressing pits with large deformation on the outer surface of the connecting pipe can be reduced during crimping, so that the risk of cutting a cable insulator and the risk of puncturing the cable insulator are avoided.

The embodiment of the invention provides a power conversion circuit, a power supply and electronic equipment. The power conversion circuit can convert a power supply voltage from power supply equipment into a power supply voltage suitable for power receiving equipment, and supplies power to the power receiving equipment. Meanwhile, the power conversion circuit adopts floating output to supply power to the power receiving equipment, so that surge and / or static electricity transmitted to the power receiving equipment can be effectively reduced, the anti-surge and / or anti-static capacity of the power receiving equipment is improved, and the risk of breakdown of the power receiving equipment is avoided. Besides, even if the power supply voltage provided by the power supply equipment is changed, the power supply to the power receiving equipment is difficult to influence, namely, the power conversion circuit can ensure the power supply stability to the power receiving equipment.

The invention discloses a driving circuit of a depletion type transistor. The circuit comprises: a low-voltage MOS transistor, wherein the drain electrode of the low-voltage MOS transistor is connected with the source electrode of a depletion type transistor, and the source electrode of the low-voltage MOS transistor is grounded; and a direct drive circuit and an indirect locking circuit, whereinthe indirect locking circuit is connected with a power supply end and the grid electrode of the low-voltage MOS transistor and used for driving the low-voltage MOS transistor to be opened, locking thelow-voltage MOS transistor to be in a normally open state after the depletion type transistor is opened for the first time, and driving the low-voltage MOS transistor to be closed and locking the depletion type transistor to be in a closed state after the depletion type transistor is temporarily closed, the direct drive circuit is connected with the power supply end, the grid electrode of the depletion type transistor and the source electrode of the low-voltage MOS transistor and used for directly driving the depletion type transistor to be opened or closed when the low-voltage MOS transistoris in a normally-open state. The driving circuit can be opened and closed once through the low-voltage MOS transistor, so that the direct drive circuit can directly drive the depletion type transistor to be opened or closed, and the problem that the switching speed of the low-voltage MOS transistor is limited is solved.

The invention discloses a continuous production method of a voltage sectional type glass-based buried optical waveguide. A tunnel type high-temperature furnace is placed, a conveying belt and a crucible are arranged in the tunnel type high-temperature furnace, the conveying belt conveys the crucible into the tunnel type high-temperature furnace from the inlet end of the tunnel type high-temperature furnace, and the crucible is conveyed to the outlet end of the tunnel type high-temperature furnace after a high-temperature ion migration reaction. The tunnel type high-temperature furnace is provided with a plurality of sections of positive electrode sliding rails connected through insulating sliding rail connectors to form a positive electrode sliding rod and a negative electrode sliding rail. In the process in which the crucible is transported from the inlet end to the outlet end of the tunnel type high-temperature furnace, electrode leads on the two sides of a glass substrate slide on the positive electrode sliding rod and the negative electrode sliding rail respectively, and the multiple sections of positive electrode sliding rails can apply a voltage to the glass substrate in sequence. On the basis of improving the quality of an optical waveguide chip, improving the production efficiency and reducing the energy consumption, the adverse effect caused by the joule heat effect generated by a direct-current electric field in the manufacturing process of the buried optical waveguide can be reduced.

The invention discloses a main loop arrangement structure of a three-phase alternating-current motor driving system controller. The structure comprises a power module with positive and negative busbars and a support capacitor. The positive and negative busbars of the power module and the positive and negative busbars of the support capacitor are respectively connected by bolts and inserts to forman inversion main loop; positive and negative busbars of the power module extend to the positions of the bolts and the inserts along the mounting plane. The positive and negative busbars of the support capacitor horizontally extend towards the power module and then are vertically bent to the mounting plane; and the positive and negative busbars of the support capacitor extend to the positions of the bolts and the inserts along the mounting plane. The positive and negative busbars of the power module and the positive and negative busbars of the support capacitor are arranged in the same direction of the bolt and the insert, and the positive and negative busbars of the power module and the positive and negative busbars of the support capacitor are connected through the bolt and the insert respectively at the bolt and insert positions. According to the structure, surge voltage caused by stray inductance is reduced, the risk that the power module is broken down is avoided, the switching characteristic of the power module is ensured, and the reliability of motor driving control is improved.

The invention discloses an IGBT gate pole resistance adjusting circuit, a motor controller and an electric vehicle. The IGBT gate pole resistance adjusting circuit comprises a variable resistance circuit used for being connected with an IGBT gate pole so as to set an input resistor of the IGBT gate pole; a temperature detection circuit used for detecting the working temperature of the IGBT and outputting a temperature detection signal; a main control chip used for outputting a corresponding resistance adjusting signal to control the variable resistance circuit to set the resistance value of the input resistor of the IGBT gate pole according to the temperature detection signal of the temperature detection circuit. Via the IGBT gate pole resistance adjusting circuit disclosed in the invention, the service life and the output power of the IGBT can be guaranteed in a low-temperature environment.

The invention relates to a novel cake-shaped coil with a neutral point voltage regulating section in the middle. The novel cake-shaped coil comprises a basic section and the voltage regulating section. The basic section is formed by an upper basic section and a lower basic section, wherein the upper basic section and the lower basic section are symmetrically distributed at two ends of the coil and are connected in parallel. The voltage regulating section is arranged in the middle of the coil and is connected to the tail portion of the basic section in series. The voltage regulating section partially or fully participates in running of a transformer. The novel cake-shaped coil eliminates a main empty path between a high-voltage coil and a voltage regulating coil, and improves filling rate in an iron core window. When running voltage of the transformer is lower than rated voltage, the number of turns participating in the operation and the running voltage decrease in direct proportion, and loss of the transformer is reduced. Turns of the voltage regulating section and turns of the basic section linearly and gradually increase and decrease according to geometric positions, abrupt potential difference does not exist, therefore, the coil structure is simplified, the danger of electrical breakdown between the sections is avoided, an oil channel between the sections is decreased, transverse magnetic flux leakage, load loss and axial electric power of the transformer are reduced, and the filling rate in the iron core window is improved.

The invention relates to a power supply line of a power supply driving chip. The power supply line includes a starting circuit, a voltage stabilizing circuit, and a power supply circuit, the starting circuit includes a first resistor and a first capacitor, the voltage stabilizing circuit includes a transistor, a voltage-stabilizer tube, and a second resistor, the power supply circuit includes an inductor, a diode, and a second capacitor, and the capacity of the first capacitor is greater than that of the second capacitor. The first capacitor charges the second capacitor while an external load power supply charges the first capacitor via the first resistor, because the capacity of the first capacitor is greater than that of the second capacitor, the two capacitors have approximate charging speed, and charging current formed on the first capacitor is low, the voltage drop generated by a third resistor is low, the voltage value formed on the first capacitor is almost equal to that on the second capacitor, and the reverse voltage formed by the base terminal and the emitter terminal of a triode is low, so that the risk of triode breakdown caused by reverse breakdown voltage can be effectively prevented, the circuit maintenance cost is reduced, and the power supply line can work normally.

The invention discloses a service request processing method and device, and relates to the technical field of computers. A specific embodiment of the method comprises the following steps: acquiring at least one service request; respectively generating at least one first task corresponding to the at least one service request, and storing the at least one first task in a distributed cache queue by utilizing at least one first thread; extracting the first task from the distributed cache queue by utilizing at least one second thread, and executing the extracted first task; and outputting an execution result of the first task. According to the embodiment, the risk that the cache is broken down under the high-concurrency request is avoided, and the stability of the system is improved.

The invention describes a TFT, a TFT array substrate and a manufacturing method thereof, a display panel and a display apparatus. The TFT comprises a gate electrode, a gate electrode insulating layer arranged on the gate electrode, a semiconductor active layer arranged on the gate electrode insulating layer, an etching barrier layer arranged on the semiconductor active layer, and a source electrode and a drain electrode both arranged on the semiconductor active layer. Both the source electrode and the drain electrode do not cover the edges of the semiconductor active layer. When formed, the source electrode and the drain electrode are not connected with the semiconductor active layer; then an insulating film is used to pave the edges of the semiconductor active layer; and then the source electrode and the drain electrode are connected to the semiconductor active layer by means of a transparent conductive layer. Therefore, the discharge breakdown risk of metal of the source electrode and the drain electrode to the gate electrode caused by over-etching of the etching resisting layer is avoided. Besides, one more insulating film between the source and the drain electrodes and gate lines reduces the parasitic capacitance.