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Depletion-type transistor driving circuit and chip

A technology of depletion-mode transistors and drive circuits, applied in electrical components, electronic switches, pulse technology, etc., can solve the problems of switching speed limitations and affecting the high-speed switching characteristics of depletion-mode transistors

Active Publication Date: 2020-07-31
SHENZHEN XINER SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] An embodiment of the present invention provides a depletion-mode transistor drive circuit to solve the problem of switching speed limitation and affecting the high-speed switching characteristics of the depletion-mode transistor in the process of using a low-voltage MOS tube to drive the depletion-mode transistor

Method used

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  • Depletion-type transistor driving circuit and chip
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  • Depletion-type transistor driving circuit and chip

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Embodiment Construction

[0034] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0035] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity, and like reference numer...

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Abstract

The invention discloses a depletion-type transistor driving circuit and a chip. In the circuit, a drain electrode of a low-voltage MOS tube is connected with a source electrode of a main depletion-type transistor, and a source electrode of the low-voltage MOS tube is grounded; an indirect locking circuit is connected with the power supply end and the grid electrode of the low-voltage MOS tube andused for driving the low-voltage MOS tube to be opened and locking the low-voltage MOS tube to be in a normally open state after the main depletion-type transistor is opened for the first time; the direct drive circuit is connected with the power supply end, the grid electrode of the main depletion-type transistor and the source electrode of the low-voltage MOS transistor and used for directly driving the main depletion-type transistor to be turned on or turned off. The auxiliary driving circuit is connected with the power supply end, the direct driving circuit, the indirect locking circuit and the source electrode of the low-voltage MOS transistor and is used for driving the indirect locking circuit to lock the low-voltage MOS transistor to be in a normally open state; and after the powersupply end is powered off, the low-voltage MOS transistor is driven to be closed, and the direct drive circuit is controlled to close the main depletion-type transistor. The circuit can improve the switching speed of the low-voltage MOS transistor and guarantee the high-speed switching characteristic of the main depletion-type transistor.

Description

technical field [0001] The invention relates to the technical field of semiconductor driving, in particular to a depletion transistor driving circuit and a chip. Background technique [0002] Depletion-mode transistors are an important part of power electronic devices. They are generally unipolar devices that use electrons as the medium for current transmission. Due to the fast transmission speed of electrons, they can be widely used in high-frequency and high-power-density fields. [0003] The depletion mode transistor is a normally-on device, and generally requires a negative voltage to be turned off, so that its reliability is not high in practical applications. For example, currently isolated power supplies or charge pumps are widely used to create negative voltages to control depletion-mode transistors. Personal safety, and higher manufacturing costs. [0004] In order to improve the reliability of depletion-mode transistors, low-voltage MOS transistors and depletion-...

Claims

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Application Information

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IPC IPC(8): H03K17/687
CPCH03K17/687
Inventor 张益鸣刘杰
Owner SHENZHEN XINER SEMICON TECH CO LTD
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