The invention discloses a preparation method of an avalanche
photodetector. The preparation method comprises the following steps: firstly, sequentially growing a p-type InP buffer layer, an In < 0.53 > Ga < 0.47 > As
absorption layer, an In < 1-x-y > Al < x > Ga < y > As bandwidth gradient layer, a p-type In < 0.52 > Al < 0.48 > As
charge control layer, an In < 0.52 > Al < 0.48 > As multiplication layer, an In < x > Ga < 1-x > As < y > P < 1-y >
corrosion cut-off layer and a p-type InP cover layer on a p-type InP substrate; then corroding the p-type InP cover layer, wherein the corroded region comprises a
central region and one or more annular regions surrounding the
central region; carrying out secondary
epitaxy on n-type InP in the corroded region to form an n-type InP central collector region and an n-type InP
electric field protection ring; then depositing a SiO2 layer, and
etching off SiO2 in a partial region to form a circle of annular SiO2
isolation layer; depositing an optical anti-reflection film and forming a
metal contact window on the optical anti-reflection film above the central collector region; then constructing an upper
electrode, wherein the upper
electrode is in contact with the central collector region through the
metal contact window; and finally, preparing a back
electrode on the back surface of the InP substrate.