Sealing device used for 10(-8)Pa ultra-high vacuum round plane magnetron sputtering target

Abstract

The present invention discloses one kind of sealing device for 6x10<-8> Pa aultra high vacuum circular planar magnetically controlled sputtering target. The sealing device includes one water cooling cavity with soft iron and magnetic steel, one water cooling cavity sealing flange with metal O-ring, one water inlet pipe and one water outlet pipe welded to the water cooling cavity sealing flange, one target supporting seat with one electrode insulating layer and two groups of O-rings, one installing flange welded to the target supporting seat and other parts. The present invention can ensure vacuum degree as high as 6x10<-8> Pa.

Description

Technical field [0001] The invention relates to a sealing device for a magnetron sputtering target, especially for 10 -8 Sealing device for Pa ultra-high vacuum circular planar magnetron sputtering target. Background technique [0002] After various components are made on semiconductor materials, the process of connecting these components according to the circuit design requirements to form integrated circuits with various functions is called the metallization process. The pros and cons of the metallization system and its process will affect the performance and reliability of the circuit. The sputtering process is one of the commonly used metallization processes. Because the energy of the deposited particles is higher, the film has better adhesion to the substrate. The alloy composition of the sputtering film is basically the same as that of the target. The coverage is better, and the sputtering voltage is lower, which reduces the radiation damage to the substrate material, so it...

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Problems solved by technology

However, there are deficiencies in this sputtering target. First of all, after the magnet seal cover is filled with pure iron, magnets and cooling system, if it is welded and packaged, it will be difficult to carry out necessary maintenance and maintenance of each component in it in the future. Replacement, if it is a cover-plate package, air leakage and water seepage will easily occur at the package; secondly, as the cathode, it needs to be electrically insulated from other parts in the sputtering equipment, and the insulating layer is made of non-metallic materials. Just can't use the mode of welding to solve mutual sealing problem; Again, because of the defect on the structure, the vacuum degree of sputtering equipment can only reach 10 -6 Pa, due to the low vacuum degree of the equipment, during the metal sputtering process, due to the presence of more water vapor molecules and oxygen molecules in the environment, the color of the metal layer will be abnormal, with gray and turbid areas, poor reflectivity and Defects such as poor solderability seriously affect the performance and yield of semiconductor devices and circuits

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