High-density self-insulating flexible microneedle electrode and preparation method thereof

A high-density, micro-needle technology, used in medical science, sensors, diagnostic recording/measurement, etc., can solve problems such as inability to achieve phosphor stimulation, avoid metal etching problems, avoid lithography patterning, and improve spatial resolution. rate effect

Pending Publication Date: 2022-02-08
杭州电子科技大学温州研究院有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the visual cortical prosthesis used in the paper (SecondSightMedicalProducts) has only 60 electrode points and cannot achieve high-resolution phosphor stimulation

Method used

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  • High-density self-insulating flexible microneedle electrode and preparation method thereof
  • High-density self-insulating flexible microneedle electrode and preparation method thereof
  • High-density self-insulating flexible microneedle electrode and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0044] Such as Figure 5 As shown, the specific steps of the preparation method of the high-density self-insulating flexible microneedle electrode are as follows:

[0045] 1) if Figure 5 As shown in part a, use a quartz glass plate as the substrate, place the substrate in acetone, ethanol and deionized water for 5 minutes, and then blow dry it with nitrogen and bake it on a hot plate at 180°C for 15 minutes .

[0046] 2) if Figure 5 As shown in part b of , use CVD (Chemical Vapor Deposition) to deposit a layer of paryleneC with a thickness of 10 microns as the lower insulating layer.

[0047] 3) if Figure 5 As shown in part c, use a glue spinner to spin coat a layer of SU-8 photoresist with a thickness of 10 microns on the lower insulating layer and perform photolithographic patterning on the front side to form microneedle bosses and wire bosses with inverted trapezoidal longitudinal sections. Mesa 10 and pad boss 7 structure.

[0048] 4) if Figure 5 As shown in par...

Embodiment 2

[0056] Such as Figure 5 As shown, the specific process of the steps is as follows:

[0057] 1) if Figure 5 As shown in part a, use a quartz glass plate as the substrate, place the substrate in acetone, ethanol and deionized water for 5 minutes, and then blow dry it with nitrogen and bake it on a hot plate at 180°C for 15 minutes .

[0058] 2) if Figure 5 Shown in part b of the quartz glass, spin-coat one deck of PMMA (polymethyl methacrylate) on the quartz glass as a sacrificial layer, then spin-coat a layer of 5 micron thick PI (polyimide glue) on the PMMA sacrificial layer and After curing, it is used as the lower insulating layer.

[0059] 3) if Figure 5 As shown in part c, spin-coat a layer of SU-8 photoresist with a thickness of 10 microns on the lower insulating layer using a glue spinner and perform photolithographic patterning on the front side to form microneedle bosses, wire bosses and pad bosses structure.

[0060] 4) if Figure 5 As shown in part d, a l...

Embodiment 3

[0068] Such as Figure 5 As shown, the specific process of the steps is as follows:

[0069] 1) if Figure 5 As shown in part a, use a quartz glass plate as the substrate, place the substrate in acetone, ethanol and deionized water for 5 minutes, and then blow dry it with nitrogen and bake it on a hot plate at 180°C for 15 minutes .

[0070] 2) if Figure 5 As shown in part b of the above, use CVD (chemical vapor deposition system) to deposit a layer of 5 micron thick paryleneC on the quartz glass as a sacrificial layer, and then spin coat a layer of 5 micron thick PI (polyimide) on the paryleneC sacrificial layer. Glue) and cured as the lower insulating layer.

[0071] 3) if Figure 5 As shown in part c, spin-coat a layer of SU-8 photoresist with a thickness of 10 microns on the lower insulating layer using a glue spinner and perform photolithographic patterning on the front side to form microneedle bosses, wire bosses and pad bosses structure.

[0072] 4) if Figure ...

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Abstract

The invention discloses a high-density self-insulating flexible microneedle electrode and a preparation method thereof. An existing flexible cerebral cortex electrode has the problems of low stimulation and recording spatial resolution and incapability of being implanted into the cortex. In addition, the existing hesitant electrode or similar hesitant electrode also has the problems of complex preparation process and high cost. The flexible microneedle electrode comprises a lower insulating layer, an SU-8 boss arranged on the lower insulating layer, and metal conductive pads, metal wires and a flexible microneedle electrode array which are arranged on the SU-8 boss. The longitudinal sections of different positions of the SU-8 boss are inverted trapezoidal. The plurality of metal conductive pads, the plurality of metal wires and the flexible microneedle electrode array are all arranged on the SU-8 boss. By using the microneedle structure, the electrode points of the microneedle electrode array can penetrate into the tissue to realize stimulation and recording with high temporal-spatial resolution. The preparation method has the advantages of simple preparation process and low cost, and also has excellent mechanical matching performance.

Description

technical field [0001] The invention belongs to the technical field of brain-computer interface, and in particular relates to a micromachining preparation method of a flexible microneedle electrode array for electrophysiological recording and stimulation. The electrode is obtained by combining a flexible microneedle array structure with a metal microelectrode array structure To achieve electrophysiological stimulation and recording at a depth of hundreds of microns in a biological tissue. Background technique [0002] Most people who are acquired blind have damage to only the eye or optic nerve. This has inspired research into a visual cortical prosthesis (VCP), a device that bypasses the eye and optic nerve and transmits visual information from the camera directly to the visual cortex. VCP stimulates the visual cortex with a weak flash of electricity called phosphorescence. Thanks to retinocortical mapping, a series of electrode arrays are implanted at different locations...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): A61B5/293A61B5/262
CPCA61B5/293A61B5/262A61B2562/125A61B2562/164A61B2562/16
Inventor 王明浩樊晔程瑜华王高峰
Owner 杭州电子科技大学温州研究院有限公司
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