36results about "Organic/organo-metallic films" patented technology

Graphene magnet multilayers (GMMs) are employed to facilitate development of spintronic devices. The GMMs can include a sheet of monolayer (ML) or few-layer (FL) graphene in contact with a magnetic material, such as a ferromagnetic (FM) or an antiferromagnetic material. Electrode terminals can be disposed on the GMMs to be in electrical contact with the graphene. A magnetic field effect is induced in the graphene sheet based on an exchange magnetic field resulting from a magnetization of the magnetic material which is in contact with graphene. Electrical characteristics of the graphene can be manipulated based on the magnetization of the magnetic material in the GMM.

A magneto-dielectric substrate comprises a dielectric polymer matrix and a plurality of hexaferrite particles dispersed in the dielectric polymer matrix for use in dielectric substrates having optimal magnetic and dielectric properties at frequencies greater than 500 MegaHertz (MHz) while at the same time having optimal thermomechanical and electrical properties for circuit fabrication.

The invention provides a sputter target material. The sputter target material comprises an alloy system comprising Cr-C, Cr-M-C or Cr-M 1 -M 2 -C, wherein C comprises at least 0.5 and as much as 20 atomic percent; M comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Y, Zr, Nb, Mo, Hf, Ta, and W; M 1 comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta, and W, and M 2 comprises at least 0.5 and as much as 10 atomic percent and is an element selected from the group consisting of Li, Mg, Al, Sc, Mn, Y, and Te. A magnetic recording medium comprising a substrate and at least an underlayer comprising the sputter target material of the invention also is provided. A method of manufacturing a sputter target material further provided. The method can employ powder materials comprising a combination of elements can include a chromium alloy, a carbide or carbon containing master alloy.

A nanostructured material regularly arrayed over a large area comprising regularly arrayed domain structures formed on a substrate and having therein regularly arrayed pores with a size of 2 to 200 nm and nanoparticles incorporated into the pores.

An organic-based magnet is formed by molecular layer deposition (MLD) of a first compound and MLD of a second compound. The first or second compound containing a metal-containing compound. The first and second compounds being reactive with each other to form a first layer organic-based magnet. A laminate composite includes a first monolayer including a metal bonded to a magnet forming organic compound. A second monolayer may be in direct contact with the first monolayer. One of the first monolayer and the second monolayer having an induced magnetization when exposed to a magnetic field. A device includes the laminate composite and a nonmagnetic film thereon. A method of making an organic magnet on a substrate in a vacuum chamber includes depositing a first layer of metal-containing compound on the substrate by MLD.

A method for manufacturing a spin injector device, comprising the following steps of:a) forming a metal protection layer on a face of a substrate, so as to restrict or prevent oxidation and / or contamination of said face by its environment, the face being magnetic and electrically conductive, the protection layer being of a diamagnetic or paramagnetic nature;b) forming an upper layer onto the protection layer, able to promote a spin bias of electronics sates in the vicinity of the Fermi level of the interface between the protection layer and the upper layer according to an amplitude and a spin referential frame which are defined by the magnetism of the substrate and / or of the face of the substrate, the upper layer being an organic layer of which one or more molecular sites have, in contact with the protection layer, a paramagnetic moment.

A graphene structure is provided. The graphene structure includes a substrate layer and at least two graphene layers arranged on the substrate layer. The at least two graphene layers include a gate voltage tuning layer and an effective graphene layer, and the effective graphene layer includes one or more graphene layers. The magnetoresistance ratio of the graphene structure is determined by the difference in charge mobility and / or carrier density between the gate voltage tuning layer and the effective graphene layer. The charge mobility and / or carrier density of the gate voltage tuning layer can be tuned by the gate voltage applied to the graphene structure. Also provided is a magnetic field sensor including a graphene structure.

The invention relates to a preparation method of an Fe<3>O<4> / graphene composite membrane. In summary, according to the method, by the process of mixing graphene oxide with Fe<3>O<4> nano-particles at a certain ratio to obtain a mixture solution, the Fe<3>O<4> / graphene composite membrane is prepared under drying and low-temperature stepped heating reduction conditions. The product prepared by the method is good in complex condition; the Fe<3>O<4> nano-particles are uniform to disperse; and the composite membrane has ferromagnetic property. The method disclosed by the invention is simple and easy to control; industrial production is facilitated; and the prepared self-supported composite membrane has a broad application prospect in the fields of information, electrons, energy, biology, military industry and the like.