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Carbon containing sputter target alloy compositions

A sputtering target and alloy technology, applied in the field of sputtering targets, can solve problems such as unfavorable sputtering target materials

Inactive Publication Date: 2006-07-26
HERAEUS INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, conventional techniques for producing carbon-chromium alloys do not favor their use as sputtering target materials and mitigate any beneficial epitaxial growth properties that such alloys may achieve in cobalt alloy magnetic recording layers

Method used

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  • Carbon containing sputter target alloy compositions
  • Carbon containing sputter target alloy compositions
  • Carbon containing sputter target alloy compositions

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Embodiment Construction

[0018] By producing carbon-containing chromium alloy sputtering target materials from individual elements, carbides or from carbon-containing master alloy raw materials to achieve optimal epitaxial growth in the sputtered bottom layer and epitaxy matching with the sputtered magnetic outer layer film, The invention can increase the data storage of the magnetic recording medium.

[0019] Powder metallurgy methodology is used to produce products with the formula Cr-C, Cr-M-C or Cr-M 1 -M 2 The sputtering target material of the alloy system shown in -C endows the production method of various carbon-containing alloy systems with versatility. The method of producing sputtering target materials of the present invention employs powder formulations of individual elements, carbides or carbonaceous master alloys containing elements from Groups II-A to VIIA and Groups I-B to IV-B of the Periodic Table. The production method of the present invention provides an efficient method for produ...

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Abstract

The invention provides a sputter target material. The sputter target material comprises an alloy system comprising Cr-C, Cr-M-C or Cr-M 1 -M 2 -C, wherein C comprises at least 0.5 and as much as 20 atomic percent; M comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Y, Zr, Nb, Mo, Hf, Ta, and W; M 1 comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta, and W, and M 2 comprises at least 0.5 and as much as 10 atomic percent and is an element selected from the group consisting of Li, Mg, Al, Sc, Mn, Y, and Te. A magnetic recording medium comprising a substrate and at least an underlayer comprising the sputter target material of the invention also is provided. A method of manufacturing a sputter target material further provided. The method can employ powder materials comprising a combination of elements can include a chromium alloy, a carbide or carbon containing master alloy.

Description

technical field [0001] The present invention relates generally to sputtering targets and, more particularly, to methods of producing carbon-containing chromium alloy materials that promote favorable epitaxial growth of magnetic crystalline planes in cobalt alloy magnetic films. Background technique [0002] The sputtering process is widely used in a variety of applications to provide deposition of thin film materials with atomically smooth surfaces, with precisely controlled thicknesses, for example for coating semiconductors and / or for forming films on the surface of magnetic recording media . In conventional magnetic recording media production, thin film layers are sequentially sputtered onto a substrate through a plurality of sputter targets, each sputter target composed of a different material, thereby depositing a thin film "stack". Fig. 1 illustrates a typical thin film laminate used in conventional magnetic recording media. At the bottom of the stack is a non-magnet...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
CPCG11B5/8404H01F41/183B32B15/01G11B5/851H01F10/005C22C27/06B32B15/017C23C14/3414G11B5/7325C23C14/14G11B5/7368G11B5/73
Inventor 阿卜杜勒瓦哈卜·齐亚尼迈克尔·莱思罗普弗朗索瓦·C·达里
Owner HERAEUS INC
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