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Nuclear composite film for magnetic, nonmagnetic and magnetic multilayer film and use thereof

A multi-layer film, non-magnetic technology, applied in the direction of magnetic film, organic/organic metal film, magnetic objects, etc., can solve the problems of high production cost and low yield, and achieve low price, low cost and easy to carry Effect

Inactive Publication Date: 2006-09-27
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to overcome that the core composite film for magnetic / nonmagnetic / magnetic multilayer film prepared by the prior art is difficult to maintain uniformity and consistency in a large area, so that the yield is low and the production cost remains high defects, thereby providing a core composite film for magnetic / nonmagnetic / magnetic multilayer films that can maintain uniformity and consistency over a large area

Method used

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  • Nuclear composite film for magnetic, nonmagnetic and magnetic multilayer film and use thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] First, the lower electrode layer and the bottom layers are grown in sequence by magnetron sputtering under high vacuum, and its structure is: Ta(5nm) / Cu(20nm) / Ni-Fe(5nm) / Ir-Mn(10nm) / Co -Fe-B (4nm); then stearic acid (C 17 H 35 COOH)LB film is used as the isolation layer; finally, the upper layers are grown sequentially by magnetron sputtering under high vacuum: Co-Fe-B(4nm) / Ni-Fe(5nm) / Cu(20nm) / Ta(5nm) .

[0040] After the sample is grown, ultraviolet exposure and ion beam etching are used to obtain the required sample unit with a certain shape and size. The unit of the composite magnetic multilayer film can be used for magnetic sensitivity, electric sensitivity, light sensitivity, or gas sensitivity. The device cell of the detector or the storage cell of Magnetic Random Access Memory (MRAM).

Embodiment 2

[0042] First, the lower electrode layer and the bottom layers are grown in sequence by magnetron sputtering under high vacuum, and its structure is: Ta(5nm) / Cu(20nm) / Ni-Fe(5nm) / Ir-Mn(10nm) / Co -Fe(4nm) / Ru(0.9nm) / Co-Fe(4nm); then the fatty acid [CH 3 (CH 2 ) 14 COO] 2 The Cd LB film was used as the isolation layer; finally, the upper layers were grown sequentially by magnetron sputtering under high vacuum: Co-Fe(4nm) / Ru(0.9nm) / Co-Fe(4nm) / Cu(20nm) / Ta (5nm).

[0043] After the sample has grown, the follow-up work is similar to that in Example 1, which is omitted here.

Embodiment 3～13

[0045] According to the methods of Examples 1 and 2, core composite films for magnetic / nonmagnetic / magnetic multilayer films with different LB films as intermediate spacers (functional layers) were prepared. The types and properties of the LB films are listed in Table 1.

[0046] Example

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Abstract

The kernel composite film for multilayer magnetic / non-magnetic / magnetic film includes a free magnetic layer, an isolating layer and a nailed magnetic layer. Of the free magnetic layer, the isolating layer and the nailed magnetic layer in the kernel composite film, at least the isolating layer has LB film layer of insulating, conducting or semiconductor material. The kernel composite film may be used as the magnetic inducing unit in magnetic resistive rotating valve sensor, and as the memory unit in magnetic resistive RAM. It may have great area homogeneity and identity, and has simple preparation process and low cost.

Description

technical field [0001] The invention belongs to the field of materials, in particular to a core composite film for magnetic / non-magnetic / magnetic multilayer films, in particular to a core of an LB film structure with giant magnetoresistance effect or tunneling magnetoresistance effect Composite films, and their applications in spin valve sensors and magnetic random access memory. Background technique [0002] As the magnetic induction unit of the magnetoresistive spin valve sensor or the storage unit of the magnetoresistive random access memory (Magnetoresistive Random Access Memory, hereinafter referred to as MRAM), the storage unit can be composed of three to dozens of layers of magnetic and non-magnetic films, wherein the magnetic and non-magnetic films are composed of magnetic and non-magnetic films. The multilayer film contains at least one such core composite film, which is similar to a "sandwich" three-layer structure: pinned magnetic layer / isolation layer / free magnet...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B7/04
CPCB82Y25/00H01F10/3268H01F10/005G11B5/3909G11B2005/3996
Inventor 王天兴曾中明杜关祥韩秀峰洪桢敏石高全
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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