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Graphene-based magnetoresistive sensors

A magnetic field sensor, graphene technology, applied in instruments, nanomagnetism, measurement of magnetic variables, etc., can solve the problems of magnetoresistive sensor torture, not suitable for detecting large fields, etc.

Inactive Publication Date: 2021-04-02
NAT UNIV OF SINGAPORE
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  • Abstract
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Problems solved by technology

However, magnetoresistive sensors (especially anisotropic magnetoresistive sensors) suffer from cross-field errors and are not suitable for detecting large fields

Method used

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  • Graphene-based magnetoresistive sensors
  • Graphene-based magnetoresistive sensors
  • Graphene-based magnetoresistive sensors

Examples

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Embodiment Construction

[0019] The following detailed description is merely exemplary in nature and is not intended to limit the invention or the application and uses of the invention. Furthermore, there is no intention to be bound by any theory presented in the preceding background of the invention or the following detailed description. This example aims to present a novel multilayer graphene-based magnetoresistive sensor. The multilayer graphene-based magnetoresistive sensor provides high sensitivity in both low and high magnetic fields. Furthermore, this multilayer graphene-based magnetoresistive sensor is almost temperature-independent, and thus does not require a temperature-drift correction circuit at a typical operating temperature of 400K. Finally, the present multilayer graphene-based magnetoresistive sensor shows tunable magnetoresistance under different gate voltages. Multilayer graphene structures are also intended to be included in devices where these properties are preferred.

[0020...

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Abstract

A graphene structure is provided. The graphene structure includes a substrate layer and at least two graphene layers arranged on the substrate layer. The at least two graphene layers include a gate voltage tuning layer and an effective graphene layer, and the effective graphene layer includes one or more graphene layers. The magnetoresistance ratio of the graphene structure is determined by the difference in charge mobility and / or carrier density between the gate voltage tuning layer and the effective graphene layer. The charge mobility and / or carrier density of the gate voltage tuning layer can be tuned by the gate voltage applied to the graphene structure. Also provided is a magnetic field sensor including a graphene structure.

Description

[0001] priority [0002] This application claims priority to US Patent Application No. 61 / 964,268, filed December 27, 2013. technical field [0003] The present invention relates generally to magnetoresistive sensors, and more particularly to graphene-based magnetoresistive sensors. Background technique [0004] In daily life, magnetic sensors such as Hall sensors and magnetoresistive sensors are widely used as speed sensors, position sensors in refrigerators, mobile phones, washing machines, and notebook computers, etc. [0005] Hall sensors whose Hall resistance changes under an external magnetic field typically utilize semiconductors such as silicon, InAs, GaAs, and InSb. Silicon-based Hall sensors are suitable for monolithic integrated circuits, but have low sensitivity, defined as the voltage generated for a unit magnetic field (mV / mT), due to the low mobility of carriers. Hall sensor based on InSb semiconductor due to about 40000cm 2 The high mobility of / (V·s) resu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R33/09B82Y25/00
CPCB82Y25/00G01R33/09H01F10/005
Inventor G·卡隆H·杨申荣俊安东尼奥·埃利奥·卡斯特罗·内托
Owner NAT UNIV OF SINGAPORE
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