84results about "Evaporation application" patented technology

In the present inventive process for producing an R-Fe-B rare earth sintered magnet, first, there is prepared an R-Fe-B sintered magnet whose main phase consists of R2Fe14B compound crystal grains containing light rare earth element RL (at least one of Nd and Pr) as main rare earth element R. Subsequently, the sintered magnet body on its surface is coated with an RHM alloy layer composed of RH (wherein RH is one or two or more rare earth elements selected from among Dy, Ho and Tb) and metal M (wherein M is one or two or more metal elements selected from among Al, Cu, Co, Fe and Ag), the metal M forming RHM so as to induce a melting point lowering. Thereafter, heat treatment is carried out at 500 DEG to 1000 DEG C in vacuum or Ar atmosphere so as to cause the metal element M to diffuse from the surface into the internal portion of the sintered magnet and to cause the heavy rare earth element RH to diffuse from the surface into the internal portion of the rare earth sintered magnet body.

On a substrate at a temperature of 120 to 240° C., Fe and Pt monatomic layers are alternately laminated. The magnetic multilayer film obtained by such a method has an L10 ordered structure so as to exhibit a high magnetic anisotropy energy constant, a (001) surface parallel to the substrate surface, and a high perpendicular magnetic anisotropy, while its coercive force in a direction perpendicular to the substrate surface and the squareness ratio of its magnetization curve in a direction perpendicular to the substrate surface are large, so that it is usable as a magnetic recording film for a magnetic recording medium and the like. Also, since the magnetic multilayer film is formed while the substrate temperature is 120 to 240° C., the temperature load on the substrate or the like is lowered as compared with conventional making methods in which the substrate temperature is about 500° C.

The heat resistance of a magnetic resistance device utilizing the TMR effect is improved. Also, the Neel effect of the magnetic resistance device utilizing the TMR effect is restrained. The magnetic resistance device includes a first ferromagnetic layer formed of ferromagnetic material, a non-magnetic insulative tunnel barrier layer coupled to the first ferromagnetic layer, a second ferromagnetic layer formed of ferromagnetic material and coupled to the tunnel barrier layer, and an anti-ferromagnetic layer formed of anti-ferromagnetic material. The second ferromagnetic layer is provided between the tunnel barrier layer and the anti-ferromagnetic layer. A perpendicular line from an optional position of the surface of the second ferromagnetic layer passes through at least two of the crystal grains of the second ferromagnetic layer.

First, an R—Fe—B based rare-earth sintered magnet body including, as a main phase, crystal grains of an R2Fe14B type compound that includes a light rare-earth element RL, which is at least one of Nd and Pr, as a major rare-earth element R is provided. Next, an M layer, including a metallic element M that is at least one element selected from the group consisting of Al, Ga, In, Sn, Pb, Bi, Zn and Ag, is deposited on the surface of the sintered magnet body and then an RH layer, including a heavy rare-earth element RH that is at least one element selected from the group consisting of Dy, Ho and Tb, is deposited on the M layer. Thereafter, the sintered magnet body is heated, thereby diffusing the metallic element M and the heavy rare-earth element RH from the surface of the magnet body deeper inside the magnet.

A CPP spin-valve element formed on a substrate including a free layer structure including at least one ferromagnetic layer and a pinned layer structure including at least one ferromagnetic layer. The free layer is magnetically softer than the pinned layer. A thin non-magnetic spacer layer structure configured to separate the free layer and the pinned layer is provided in order to prevent a magnetic coupling between the free and pinned layer structures, and to allow an electric current to go there through. At least two current-confining (CC) layer structures including at least two parts having significantly different current conductivities are incorporated therein.

The object of the present invention is to improve the productivity of a permanent magnet and to manufacture it at a low cost by effectively coating Dy and Tb on a surface of the magnet of Fe—B-rare earth elements having a predetermined configuration. The permanent magnet of the present invention is manufactured by a coating step for coating Dy on the surface of the magnet of Fe—B-rare earth elements having a predetermined configuration and a diffusing step for diffusing Dy coated on the surface of the magnet into crystal grain boundary phases of the magnet with being heat treated at a predetermined temperature. In this case, the coating step comprises a first step for heating a process chamber used for carrying out the coating step and generating metallic vapor atmosphere within the process chamber by vaporizing vaporizable metallic material previously arranged within the process chamber, and a second step for introducing into the process chamber the magnet held at a temperature lower than that within the process chamber and then selectively depositing the vaporizable metallic material on a surface of the magnet by an effect of temperature difference between the temperature within the process chamber and that of the magnet by the magnet reaches a predetermined temperature.

First, an R—Fe—B based rare-earth sintered magnet body including, as a main phase, crystal grains of an R2Fe14B type compound that includes a light rare-earth element RL, which is at least one of Nd and Pr, as a major rare-earth element R is provided. Next, an M layer, including a metallic element M that is at least one element selected from the group consisting of Al, Ga, In, Sn, Pb, Bi, Zn and Ag, is deposited on the surface of the sintered magnet body and then an RH layer, including a heavy rare-earth element RH that is at least one element selected from the group consisting of Dy, Ho and Tb, is deposited on the M layer. Thereafter, the sintered magnet body is heated, thereby diffusing the metallic element M and the heavy rare-earth element RH from the surface of the magnet body deeper inside the magnet.

A nickel thin film is formed, for example, to a thickness of 2 nm or more on a polyethylene naphthalate substrate by a vacuum evaporation method. A magnetoresistance effect element using ferromagnetic nano-junction is comprised by using two laminates each comprising a nickel thin film formed on a polyethylene naphthalate substrate, and joining these two laminates so that the nickel thin films cross to each other in such a manner that edges of the nickel thin films face each other.