637results about How to "Damage suppression" patented technology

A head 2 has a face line 8 having a depth of D1 (mm). When a boundary between a land area and a face line is defined as a point Pa; a point of which a depth is [D1 / 4] (mm) is defined as a point Pb; a point of which a depth is [D1 / 2] (mm) is defined as a point Pc; a point of which a depth is [(D1)×(¾)] (mm) is defined as a point Pd; a point of which a depth is 0.002 (mm) is defined as a point Px; a radius of a circle CL1 passing through three points of the point Pa, the point Pb, and the point Pc is defined as R3 (mm); a straight line passing through the point Pa and the point Px is defined as a straight line Lax; and an angle between the land area and the straight line Lax is defined as θ2 (degree), the radius R3 is 0.2 (mm) or greater and 0.4 (mm) or less, and the angle θ2 is 10 degrees or greater and 50 degrees or less.

The method of etching a sacrificial layer according to the present invention includes the steps of forming a sacrificial layer having a protrusive shape on a base layer, forming a covering film covering the sacrificial layer, forming a protective film made of a material whose etching selection ratio to the sacrificial layer is greater than the etching selection ratio of the covering film to the sacrificial layer on a portion of the covering film opposed to the side surface of the sacrificial layer, and etching the sacrificial layer after the formation of the protective film.

A structure for mounting a battery pack on a vehicle includes a mount for supporting the battery pack. The battery pack is fixed to an upper side of the mount by bolts. The battery pack is disposed on a rear side of a rear seat. The battery pack includes screw holes through which the bolts are inserted. The screw holes have closed shapes. The screw holes are long in a front-rear direction and formed so that the battery pack moves when an impact is applied on it. A fixed state of the battery pack by the bolts is canceled after movement of the battery pack.

Provided are an organic light emitting display device and a method of manufacturing the organic light emitting display device according to an exemplary embodiment of the present disclosure. The organic light emitting display device includes: a substrate including a display area and a pad area; a pad electrode structure on the substrate in the pad area and including a first pad electrode and a second pad electrode on the first pad electrode; and a protection conductive layer covering a lateral surface of the second pad electrode so as to reduce corrosion of the second pad electrode.

This invention provides a golf club head including a plurality of score lines on the face. The golf club head includes a plurality of striations formed on the face and extending from a toe side to a heel side. The cross-sectional shape of each of the striations is a triangle asymmetric with regard to a virtual center line in the width direction, and the smallest interior angle among three interior angles of the triangle is placed at the sole side of the golf club head. A depth D from the face to the deepest portion of each of the striation satisfies 10 μm≦D≦40 μm.

A liquid-crystal display (LCD) device includes: an array substrate on which a sub-pixel is disposed; a color filter substrate on which a color filter corresponding to the sub-pixel is disposed; and a liquid-crystal layer between the array substrate and the color filter substrate. The array substrate comprises a lens hole, the color filter substrate comprises a lens hole guide, and a diameter of the lens hole is smaller than an inner diameter of the lens hole guide.

A contents transmitting apparatus includes an encryption algorithm storage section for storing a plurality of encryption algorithms; a key generation section for generating key information based on a mutual authentication result with a contents receiving apparatus; a control section for selecting one encryption algorithm from the encryption algorithm storage section and acquiring a key from the key information to provide it to an encryption section. The encryption section encrypts a content by use of a given encryption algorithm and a given key. During a period in which the generated key information is valid, a different encryption algorithm is selected from the encryption algorithm storage section every time a content to be transmitted is changed, and a different key is acquired from the key information for encryption.

The invention discloses mask liquid with multiple skin care effects and a preparation method thereof, aims at providing mask liquid which has effects of skin whitening, speckle removing, wrinkle smoothing, inflammation relieving and diminishing, long-lasting moisturizing and grease balancing, and belongs to the technical field of cosmetics. According to the technical scheme, the mask liquid is prepared from, by weight, 0.5%-3% of sericin, 3.011%-14.02% of a plant extract, 1.11%-8.35% of a moisturizer, 8%-15% of polyalcohol, 0.1%-1.5% of active peptides, 0.08%-0.15% of Carbomer, 0.08%-0.15% of triethanolamine, 0.02%-0.06% of disodium EDTA, 0.3%-0.5% of a preservative and the balance deionized water.

The present inventors investigated anti-IL-6 receptor antibodies for their effect in suppressing damage to transplanted islets after islet transplantation. As a result, they found that anti-IL-6 receptor antibodies reduced damage to transplanted islets, improved islet survival, and corrected hyperglycemia in recipients. Further, they revealed that administration of the anti-IL-6 receptor antibodies of the present invention suppressed the production of inflammatory cytokines by infiltrating cells after transplantation. Specifically, the present inventors discovered for the first time that damage to transplanted islets after islet transplantation can be suppressed by using anti-IL-6 receptor antibodies according to the present invention.

An object is to provide a highly reliable semiconductor device having resistance to external stress and electrostatic discharge while achieving reduction in thickness and size. Another object is to prevent defective shapes and deterioration in characteristics due to external stress or electrostatic discharge in a manufacture process to manufacture a semiconductor device with a high yield. A first insulator and a second insulator facing each other, a semiconductor integrated circuit and an antenna provided between the first insulator and the second insulator facing each other, a conductive shield provided on one surface of the first insulator, and a conductive shield provided on one surface of the second insulator are provided. The conductive shield provided on one surface of the first insulator and the conductive shield provided on one surface of the second insulator are electrically connected.

Provided is an ultrasonic device including: an ultrasonic element array substrate having a plurality of ultrasonic elements that each include a piezoelectric body; an acoustic lens secured via an acoustic matching layer to a surface, formed with the ultrasonic elements, of the ultrasonic element array substrate; and a support member secured to a surface, opposite to the surface formed with the ultrasonic elements, of the ultrasonic element array substrate, wherein the support member is formed to have a larger area, in plan view in the thickness direction of the ultrasonic element array substrate, and a higher bending stiffness than the ultrasonic element array substrate, and the acoustic lens is formed to have a lower bending stiffness than the ultrasonic element array substrate. The above-described ultrasonic device further includes an acoustic matching layer filled between the ultrasonic element array substrate and the acoustic lens.

A semiconductor laser device capable of suppressing damage of a waveguide is obtained. This GaN-based semiconductor laser chip (semiconductor laser device) includes an n-type GaN substrate of a nitride-based semiconductor and a semiconductor layer of a nitride-based semiconductor formed on the n-type GaN substrate and provided with a ridge portion constituting a waveguide extending in a direction F. The ridge portion (waveguide) is formed on a region approaching a first side from the center of the semiconductor layer. On a region opposite to the first side of the ridge portion (waveguide), a cleavage introduction step is formed from the side of the semiconductor layer, to extend in a direction intersecting with the extensional direction F of the ridge portion (waveguide).

The invention discloses a polypeptide composition for repairing, whitening and removing wrinkles. The polypeptide composition for repairing, whitening and removing the wrinkles is prepared from the following components is percentage by weight: a repairing polypeptide composition, a collagen supplementing polypeptide composition, a wrinkle removing polypeptide composition, a skin-brightening polypeptide composition, a small molecular active substance, a skin-care activating agent, a pH (Potential of Hydrogen) regulator, a plurality of auxiliary agents and the balance of water, wherein the repairing polypeptide composition comprises palmitoyl tetrapeptide-7 and tripeptide-1-copper; the collagen supplementing polypeptide composition comprises palmitoyl tripeptide-1, palmitoyl tripeptide-5 andpalmitoyl pentapeptide-4; the wrinkle removing polypeptide composition comprises acetyl hexapeptide-8, dipeptide diaminobutyroyl benzylamide diacetate and melittin; the skin-brightening polypeptide composition comprises nonapeptide-1, carnosine and tetrapeptide-30. According to the polypeptide composition disclosed by the invention, a novel formula is formed through adjusting ratios of differentpolypeptide components, so that polypeptide effects with different focuses and different applicable ranges; the monarch, minister, assistant and guide thought in traditional Chinese medical science isapplied to the polypeptide composition, so that the formula is diversified and the maximum applicability and applicable range are realized.

A ceramic substrate for mounting a light emitting element. The ceramic substrate has a placement surface for placing a light emitting element having an electrode; and an electrode electrically-connected with the electrode of the light emitting element, wherein the ceramic substrate comprises a substrate body consisting of a nitride ceramics; and a coat layer coating at least a part of a surface of the substrate body and consisting of a ceramics different from the nitride ceramics forming the substrate body; and the coat layer has an optical reflectance of 50% or more for any light having a wavelength of from 300 to 800 nm, which can increase a luminance of the light emitting element by reflecting the light emitted from the element efficiently with certainty, and which has a high heat radiation property; and a manufacturing method therefor.

A battery pack comprising: a secondary battery including a safety valve; a gas absorption portion including a gas absorbent represented by zeolite and a container hermetically enclosing the gas absorbent; and a case housing the secondary battery and the gas absorption portion. The safety valve is configured to discharge a gas produced in the secondary battery at the time of abnormality. The container includes a principal surface facing the safety valve, for example, and when the gas is discharged, the container is unsealed by rupturing of at least the principal surface of the container by an effect of heat or pressure of the gas.

A channel layer (11) made of compound semiconductor and a barrier layer (12) made of compound semiconductor having a band gap wider than the channel layer are formed over a substrate. A gate insulating film (13) made of first insulating material is formed on the barrier layer over the channel region. A gate electrode (23) is formed on a partial area of the gate insulating film. A protective film is disposed on the gate insulating film on both sides of the gate electrode. The protective film comprises a lower protective film (14) made of second insulating material whose etching resistance is different from the first insulating material and an upper protective film (15) made of third insulating film whose etching resistance is different from the second insulating material. A source electrode and a drain electrode are electrically connected to the channel layer on both sides of the gate electrode.

A semiconductor device which includes a first semiconductor chip, a second semiconductor chip flip-chip bonded to the first semiconductor chip, a resin portion for sealing the first semiconductor chip and the second semiconductor chip such that a lower surface of the first semiconductor chip and an upper surface of the second semiconductor chip are exposed and a side surface of the first semiconductor chip is covered, and a post electrode which pierces the resin portion and is connected to the first semiconductor chip, and a manufacturing method thereof are provided.

The present invention provides a dynamoelectric stator and a method for the manufacture thereof enabling electrical insulation properties to be improved by forming slot-housed portions with a racetrack-shaped cross section to suppress damage to an electrically-insulating coating arising during mounting of a stator winding to a stator core. The construction is such that the slot-housed portions of the stator winding are formed with the racetrack-shaped cross section, and are housed inside slots so as to line up in single columns in a radial direction with a longitudinal direction of the cross section of the slot-housed portions aligned in a circumferential direction. Thus, because short sides of the slot-housed portions facing inner circumferential side surfaces of the slots form convex curved surfaces, the occurrence of damage to the electrically-insulating coating resulting from rubbing between the short sides of the slot-housed portions and the inner circumferential side surfaces of the slots during insertion of the slot-housed portions into the slots is suppressed, thereby improving electrical insulation properties.

A flexible touch panel includes a flexible substrate bent in a first direction, and a touch sensor unit disposed on the flexible substrate, the touch sensor unit including a bridge extending in a second direction intersecting the first direction.

A hair iron can give hair a sufficient amount of negative ions. The hair iron has a grip, and a hair-care section connected to the grip, having a heater for generating heat to hair for hair dressing. Further, it has a negative ion generator which generates negative ions due to discharge around an electrode therein to emit them toward hair held by the hair-care section. The hair-care section has a bar-like shape, and the heater is fixed to an outer surface of the bar-like shape. Then, by winding hair to the hair care section in the hair iron, hair dressing can be performed efficiently.

A first GaN group light emitting element that emits blue light, a second GaN group light emitting element that emits green light, and a third light emitting element that emits red light are provided on a first lead terminal, a second lead terminal, and a third lead terminal, respectively. These lead terminals are secured by a securing member. A second portion in the first lead terminal and a second portion in the second lead terminal are wider than a second portion in the third lead electrode. The second portion of the third lead terminal is wider than parts corresponding to second portions of the fourth lead terminal to the sixth lead terminal.

Provided are a driver circuit which suppresses damage of a semiconductor element due to ESD in a manufacturing process, a method of manufacturing the driver circuit. Further provided are a driver circuit provided with a protection circuit with low leakage current, and a method of manufacturing the driver circuit. By providing a protection circuit in a driver circuit to be electrically connected to a semiconductor element in the driver circuit, and by forming, at the same time, a transistor which serves as the semiconductor element in the driver circuit and a transistor included in the protection circuit in the driver circuit, damage of the semiconductor element due to ESD is suppressed in the process of manufacturing the driver circuit. Further, by using an oxide semiconductor film for the transistor included in the protection circuit in the driver circuit, leakage current in the protection circuit is reduced.

The invention discloses application of dihydromyricetin in preparing a medicine for preventing and treating untoward reactions in radiotherapy and chemotherapy of tumor. In particular, the application is to prepare medicines for preventing and treating untoward reactions in radiotherapy and chemotherapy of tumor, preventing and treating arrest of bone marrow and baldness, resisting mutation, preventing and treating the generation of secondary tumors, preventing and treating tumor transfer, and preventing and treating breast cancer, cervical carcinoma, intestinal cancer and the like. The invention creatively finds that the dihydromyricetin has the effects of removing free radicals, inhibiting reaction chains of the free radicals, resisting the mutation, inhibiting the expression of the tumor gene, causing the death of tumor cells, preventing and treating the tumor generation, preventing and treating the secondary tumors and the transfer of the secondary tumors and preventing and treating infection. Therefore, as the medicine for preventing and treating untoward reactions in radiotherapy and chemotherapy of tumor, the dihydromyricetin can inhibit and alleviate chemical damage, prevent and treat damage of a mutagen and further prevent gene mutation or the secondary tumors; and by combination with the radiotherapy and chemotherapy, the effects of preventing untoward reactions in radiotherapy and chemotherapy of tumor and preventing generation of tumors are achieved.

A wiring electrically connected to a terminal to which a high power supply potential is applied and a wiring electrically connected to a terminal to which a low power supply potential is applied are formed adjacent to each other and are formed so as to surround the integrated circuit. Thus, wiring resistance can be added between the terminals and the integrated circuit and capacitance can be added between the two wirings. Even if overvoltage is applied to the terminals due to ESD or the like, the energy of the overvoltage is consumed by the wiring resistance and the added capacitor, so that damage of the integrated circuit can be suppressed.

An ion withdrawal apparatus that withdraws ions emitted from a plasma in an EUV light production apparatus in which a target at an EUV light production point is irradiated with laser light to be made in a plasma state and the target emits EUV light, the ion withdrawal apparatus which includes: a collector mirror that is disposed in a direction opposite to a laser light incidence direction to collect the EUV light and has a hole for the ions to pass therethrough; magnetic line of force production means that produces a magnetic line of force that is parallel or approximately parallel to the laser light incidence direction at or in the vicinity of the EUV light production point; and ion withdrawal means that is disposed on the opposite side of the collector mirror from the EUV light production point and withdraws the ions.

A liquid storage container supplies ink to a printer which consumes the ink, and includes a liquid storage body which includes a liquid lead-out port communicating with the printer and a filler port formed to pour the liquid to the liquid storage container, an auxiliary holding member which is mounted to be slidable to a side in which the filler port is formed, and a memory unit holding member which is detachably configured to the auxiliary holding member and includes a memory unit.

A manufacturing method for a semiconductor device, includes: preparing a semiconductor wafer having an active surface and a rear surface; forming a plurality of semiconductor regions, each of which having semiconductor elements formed on the active surface of the semiconductor wafer; forming cutting regions on the outer periphery of the semiconductor regions on the active surface of the semiconductor wafer; forming, on the cutting region, a first groove which does not penetrate the semiconductor wafer; forming, on the rear surface of the semiconductor wafer, a second groove which does not penetrate to the first groove in the position corresponding to the cutting region; decreasing a thickness of the semiconductor wafer, connecting the first groove and the second groove, and dividing each of the semiconductor regions from the semiconductor wafer by executing isotropic etching to the rear surface of the semiconductor wafer; and obtaining a plurality of individual semiconductor devices.