The invention discloses an inorganic
metal oxide ion storage layer, a
processing method and application of a low-temperature solution of the inorganic
metal oxide ion storage layer, and belongs to thetechnical field of inorganic material preparation. The
processing method of the solution of an inorganic
metal oxide layer comprises the following steps that (1) precursor salt of the inorganic metaloxide, polar
solvent and ligand are mixed to obtain a precursor solution; (2) film is formed by adopting the precursor solution, heat treatment is conducted, and the inorganic metal oxide layer is obtained after the polar
solvent is volatilized. According to the inorganic metal
oxide ion storage layer, the
processing method and application of the low-temperature solution of the inorganic metal
oxide ion storage layer, under the condition that the concentration and components of the precursor are regulated, after low-temperature post-treatment, obtained
metal thin film has high stability and high
ion storage capacity. The method does not need complex high-temperature vacuum environment, only needs to use the precursor of different oxides, and the metal oxide thin film with an excellent property of different types prepared at a lower temperature can be taken as the ion storage layer.