The invention relates to a
solar cell photo-
anode using a
semiconductor thin film as a sensitizing agent and a preparation method of the
solar cell photo-
anode. The
solar cell photo-
anode is composed of a photo-anode body formed by a nano
metal oxide semiconductor material and
semiconductor sensitizing agent thin films covered on the surface, an
electrolyte capable of generating oxidation and reduction reaction and a counter
electrode, the photo-anode and the counter
electrode are isolated by using a heat sealable film, the
electrolyte is filled between the photo-anode and the counter
electrode, the
electrolyte at an interface where the photo-anode contacts with the electrolyte generates oxidation reaction, and the electrolyte at an interface where the counter electrode contacts with the electrolyte generates reduction reaction. The solar
cell photo-anode has the advantages that an n-type wide-band-gap semiconductor material is adopted for the photo-anode, and the photo-anode of a solar
cell is formed by growing various n-type semiconductor sensitizing agent thin films on the surface of the wide-band-gap semiconductor material by using
atomic layer deposition technology , so that light absorbing range of the photo-anode is greatly widened; a semiconductor thin film sensitizing layer enables a wide-band-gap semiconductor and the electrolyte to be isolated, so that
compositing of photo-generated carriers at the interface is substantially reduced, and efficiency of the solar
cell is remarkably improved.